IRLML2803TRPBF vs IRLML0030TRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLML2803TRPBF sa pamamagitan ng Infineon at IRLML0030TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLML2803TRPBF | IRLML0030TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | IR HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | Logic-level (5 V optimized) |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | 1.3 W |
| Packhaging | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 (3-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C (TJ) | -55C to +150C |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| Level ng MSL | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | — |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |
| Tindminan RoHS | — | Compliant |