IRLML2803TRPBF vs IRLML0030TRPBF 比較
詳細並排比較 IRLML2803TRPBF 由 Infineon 與 IRLML0030TRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLML2803TRPBF | IRLML0030TRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Part Number | IRLML2803TRPBF | — |
| 電晶體類型 | N-Channel MOSFET | — |
| Technology | IR MOSFET Generation V | IR HEXFET Power MOSFET |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 1.2 A | 5.3 A |
| On-Resistance RDS(on) at VGS=4.5V | 250 mOhm maximum | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th)] | Logic-level (5 V optimized) |
| Gate Charge (Qg) | 3.3 nC typical | — |
| Power Dissipation (PD) at TA=25C | 540 mW | 1.3 W |
| 封裝 | Micro3 / SOT-23 (3-pin) | Micro3 / SOT-23 (3-pin) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C (TJ) | -55C to +150C |
| Gate Drive Level | Logic-level (driven from 3.3V / 5V) | — |
| MSL 等級 | 1 | 1 (unlimited floor life per JEDEC J-STD-020) |
| RoHS Compliance | Compliant, Halogen-Free | — |
| FET Type | — | N-Channel |
| Drain-Source On-Resistance (RDS(on)) max | — | 27 mOhm at VGS=4.5V |
| Total Gate Charge (Qg) | — | 3.6 nC typical |
| Soldering | — | Wave-solder capable |
| Qualification | — | JEDEC standard |
| RoHS 狀態 | — | Compliant |