IRLZ44NPBF vs IRLZ44ZPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRLZ44NPBF sa pamamagitan ng Infineon at IRLZ44ZPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRLZ44NPBF | IRLZ44ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at TC=25°C | 47 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Gate-to-Source Voltage (VGS) Max | ±16 V | — |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.0 V (typ 1.5 V) | 1.0 V to 2.5 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | 22 mΩ max at VGS=5V, ID=25A | — |
| Total Gate Charge (Qg) | 32 nC | 24 nC |
| Power Dissipation (PD) at TC=25°C | 110 W | — |
| Power Dissipation (PD) at TA=25°C | 3.8 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Thermal Resistance Junction-to-Case (RθJC) | 1.4 °C/W | — |
| Packhaging | TO-220AB (through-hole, 3 leads) | TO-220AB |
| Uri ng Pagpapasok | Through Hole | Through-Hole |
| Technology | HEXFET (advanced process) | HEXFET |
| Logic-Level Gate Drive | Yes (fully enhanced at VGS=5V) | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon (formerly International Rectifier) |
| Part Number | — | IRLZ44ZPBF |
| Uri ng Transistor | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 51 A |
| RDS(on) Max @ VGS=10V | — | 13.5 mOhm |
| RDS(on) Max @ VGS=4.5V | — | 22 mOhm |
| Hanay ng Temperature na Operasyon | — | -55C to +175C |
| Maximum Junction Temperature | — | 175 C |
| Power Dissipation (PD) | — | 80 W |
| Gate Drive Level | — | Logic-Level (4.5V to 10V) |
| Qualification | — | Automotive (per manufacturer description) |