IXDD609SI vs IXDN609YI Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IXDD609SI sa pamamagitan ng IXYS at IXDN609YI sa pamamagitan ng IXYS. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IXDD609SI IXDN609YI
Brand IXYS IXYS
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Configuration Low-Side Low-Side
Bilang ng Outputs 1 —
Peak Source/Sink Current 9 A —
Supply Voltage Range 4.5 V to 35 V 4.5 V to 35 V
Logic Input Voltage Range -5 V to VCC —
Input Type CMOS-compatible, non-inverting with enable —
Propagation Delay 40 ns (typical) 40 ns (typ)
Oras ng Pagtaas <25 ns (with 1 nF load) < 25 ns
Time ng Pagbaba <25 ns (with 1 nF load) < 25 ns
Output Stage Matched propagation delays, cross-conduction protected —
Hanay ng Temperature na Operasyon -40 C to +125 C (extended) -40 °C to +125 °C
Packhaging 8-SOIC-EP (Power SOIC with exposed pad) TO-263-5 (D2PAK), 5 leads + tab
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualification AEC-Q100 —
Latch-up Immunity Yes (proprietary input structure) —
Peak Output Current (Source/Sink) — 9 A
Input Logic Compatibility — CMOS, non-inverting
Logic Input Negative Swing Tolerance — -5 V
Latchup Immunity — Yes (proprietary CMOS input stage)
Cross-Conduction Protection — Yes
Matched Rise/Fall Times — Yes
Level ng MSL — Level 3
Tindminan RoHS — Compliant

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