IXDD609SI vs IXDN609YI 比較

詳細並排比較 IXDD609SI 由 IXYS 與 IXDN609YI 由 IXYS. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IXDD609SI IXDN609YI
品牌 IXYS IXYS
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Configuration Low-Side Low-Side
輸出數量 1 —
Peak Source/Sink Current 9 A —
Supply Voltage Range 4.5 V to 35 V 4.5 V to 35 V
Logic Input Voltage Range -5 V to VCC —
Input Type CMOS-compatible, non-inverting with enable —
Propagation Delay 40 ns (typical) 40 ns (typ)
上升時間 <25 ns (with 1 nF load) < 25 ns
下降時間 <25 ns (with 1 nF load) < 25 ns
Output Stage Matched propagation delays, cross-conduction protected —
工作溫度範圍 -40 C to +125 C (extended) -40 °C to +125 °C
封裝 8-SOIC-EP (Power SOIC with exposed pad) TO-263-5 (D2PAK), 5 leads + tab
安裝類型 Surface Mount Surface Mount
Automotive Qualification AEC-Q100 —
Latch-up Immunity Yes (proprietary input structure) —
Peak Output Current (Source/Sink) — 9 A
Input Logic Compatibility — CMOS, non-inverting
Logic Input Negative Swing Tolerance — -5 V
Latchup Immunity — Yes (proprietary CMOS input stage)
Cross-Conduction Protection — Yes
Matched Rise/Fall Times — Yes
MSL 等級 — Level 3
RoHS 狀態 — Compliant

資料表與資源

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