K3K8K80BM-MGCP vs K3LK8K80CM-MFCP Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K3K8K80BM-MGCP sa pamamagitan ng Samsung Electronics at K3LK8K80CM-MFCP sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K3K8K80BM-MGCP K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung

K3LKCKC0BM-MGCP - 64Gb LPDDR5 DRAM 6400Mbps | Samsung

K3K8K80BM-MGCP ✓ Nakahanda
Samsung Electronics
K3LK8K80CM-MFCP K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP - 48Gbit LPDDR5 6400Mbps DRAM | Samsung

K3LK8K80CM-MFCP ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K3K8K80BM-MGCP K3LK8K80CM-MFCP
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory LPDDR5 SDRAM (DRAM) LPDDR5 SDRAM
Density 64 Gb 48 Gbit (6 GB)
Organisasyon 2G x 32 [DATA_NEEDED: organization (x width)]
Rate ng Data 6400 Mbps —
Interface LPDDR5 (CMOS) LPDDR5 (JESD209-5 class low-power DRAM interface)
Packhaging FBGA-315 (PBGA315) 315-ball FBGA (MFCP)
Supply Voltages 500 mV, 900 mV, 1.05 V, 1.8 V —
Temperature na Operasyon -25C to +85C -40 C to +105 C (automotive-grade)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology CMOS —
Memory Category Volatile DRAM —
Tindminan RoHS Compliant unknown
Lead Free Yes —
Application Class Specialized ICs / Memory —
I/O Width 32-bit —
Pin Speed — 6400 Mbps
Data Rate (package) — 51.2 GB/s (family max)
Ball Count — 315
Volte ng Pagbibigay — [DATA_NEEDED: VDD/VDDQ voltage]
Power Saving vs LPDDR4X — Approximately 20%
Generation — LPDDR5 (5th generation low-power DRAM)
Application Grade — Automotive-grade storage chip
Place of Origin — Johor, Malaysia

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