K4A4G165WD-BCRC vs K4A4G165WF-BCTD Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A4G165WD-BCRC sa pamamagitan ng Samsung Electronics at K4A4G165WF-BCTD sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A4G165WD-BCRC | K4A4G165WF-BCTD |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $8.20 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Speed Bin | DDR4-2400 (BCRC) | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | FBGA-96 | FBGA-96 (PBGA96) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Process Generation | Samsung D-die | — |
| Uri ng Interface | DDR4 (double data rate, parallel) | — |
| On-Die Termination (ODT) | Yes | — |
| Data Mask Function | Yes | — |
| Auto Precharge | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Tindminan RoHS | Lead free / RoHS Compliant | Compliant |
| Package Dimensions | [DATA_NEEDED: package dimensions] | — |
| Laki ng Memory | — | 4 Gbit |
| Speed (Data Rate) | — | 2666 Mbps (DDR4-2666) |
| Supply Voltage VDD | — | 1.2 V (1.14 V to 1.26 V) |
| I/O Voltage VDDQ | — | 1.2 V |
| Interface | — | SSTL-12 |
| Mga Karakteristika | — | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask |
| Technology | — | Samsung F-die CMOS |
| Bank Groups | — | 4 (x16 configuration) |
| Refresh | — | Self-refresh and auto-refresh supported |