K4A8G045WB vs K4A8G045WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G045WB sa pamamagitan ng Samsung Electronics at K4A8G045WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G045WB-BCRC - 8Gb DDR4 2Gx4 2400Mbps B-die | Samsung
K4A8G045WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G045WB | K4A8G045WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM (B-die) | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasyon | 2G x 4 | 2G x 4 |
| Rate ng Data | 2133 Mbps | — |
| Volte ng Pagbibigay | 1.2 V | — |
| Max Supply Current | 211.7 mA | — |
| Temperature na Operasyon | 0 C to +85 C | 0 C to 85 C |
| Packhaging | 78-ball FBGA | 78-ball FBGA (PBGA78) |
| Refresh Cycles | 8192 | 8192 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Number of Terminals | 78 | — |
| Clocking | Differential clock (CK / CK#) | — |
| On-Die Termination | Yes (ODT pin) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Programmable CWL | Yes | — |
| Internal (Self) Calibration | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Speed | — | 2400 Mbps |
| Supply Voltage (VDD/VDDQ) | — | 1.2 V |
| Process Technology | — | Samsung B-die |
| Interface | — | CMOS, differential clock (CK/CK#) |
| Maximum Supply Current | — | 211.7 mA |
| Terminals | — | 78 |
| Key DDR4 Features | — | Posted CAS, Programmable CWL, Internal (Self) Calibration, ODT, Asynchronous Reset |
| DLL Mode | — | Timing specified for DLL-enabled operation |