K4A8G085WB-BICH vs K4A8G085WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BICH sa pamamagitan ng Samsung Electronics at K4A8G085WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCPB - 8Gb DDR4 SDRAM 1Gx8 1.2V | Samsung
K4A8G085WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BICH | K4A8G085WB-BCPB |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $4.10 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Density | 8Gb | — |
| Organisasyon | 1G x 8 | — |
| Volte ng Pagbibigay | 1.2V | 1.2 V |
| Rate ng Data | 2400 Mbps (DDR4-2400) | — |
| Packhaging | 78-ball FBGA | 78-ball FBGA (BGA78 / TFBGA), rectangular, 11 mm length |
| Temperature na Operasyon | 0°C to 85°C | 0C to +85C |
| Max Supply Current | 170mA | — |
| Burst Length | BL8, BL16 | — |
| Latensya ng CAS | Programmable | — |
| On-Die ECC | Yes | — |
| Data Bus Inversion | Yes | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Die Revision | B-die | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 1G x 8 |
| Max Clock Frequency | — | 1066 MHz |
| Max Access Time | — | 0.18 ns |
| Max Standby Current | — | 0.016 mA |
| Refresh Cycles | — | 8192 |
| Technology | — | CMOS, 8Gb B-die |
| Number of Terminals | — | 78 |
| Uri ng Pagpapasok | — | Surface Mount |
| Interface | — | DDR4 SDRAM parallel interface |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Operating Temperature Grade | — | Commercial (0C to 85C) |