K4A8G165WC-BCTD vs MT40A512M16LY-062E-ATE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WC-BCTD sa pamamagitan ng Samsung Electronics at MT40A512M16LY-062E-ATE sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WC-BCTD - 8Gb DDR4 SDRAM 2666Mbps x16 | Samsung
K4A8G165WC-BCTD ✓ NakahandaMicron Technology
MT40A512M16LY-062E-ATE - 8Gb DDR4-3200 SDRAM | Micron
MT40A512M16LY-062E-ATE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WC-BCTD | MT40A512M16LY-062E-ATE |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organisasyon | 512M x16 | 512M x 16 |
| Rate ng Data | 2666 Mbps (DDR4-2666) | 3200 MT/s (DDR4-3200) |
| Clock Frequency | 1.333 GHz | 1.6 GHz |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Operating Voltage Range | 1.14 V to 1.26 V | — |
| Temperature na Operasyon | 0C to +95C | -40C to +105C (automotive) |
| Packhaging | 96FBGA | 96-ball FBGA (7.5 x 13.5 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Die Generation | C-die (1Y nm-class process) | — |
| CRC Function | Yes (write CRC) | — |
| ZQ Calibration | Yes | Yes |
| On-Die Termination | Dynamic ODT | Yes (ODT) |
| Data Mask | Yes (x16 DM) | Yes (DM) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Access Time | — | 19 ns |
| Supply Voltage (VPP) | — | 2.5 V |
| Ball Pitch | — | 0.8 mm |
| Speed Grade | — | -062E (0.625 ns tCK) |
| Refresh Mode | — | Auto self-refresh |