K4B4G1646D-BYK00 vs H5AN8G6NCJR-XXC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646D-BYK00 sa pamamagitan ng Samsung Electronics at H5AN8G6NCJR-xxC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4B4G1646D-BYK00 - 4Gb DDR3L SDRAM 256Mx16 96FBGA | Samsung
K4B4G1646D-BYK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646D-BYK00 | H5AN8G6NCJR-xxC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR4 SDRAM |
| Density | 4 Gb | 8 Gb |
| Organisasyon | 256M x 16 | 512M x 16 |
| Rate ng Data | 1600 Mbps | 2666 Mbps (VKC speed grade) |
| Volte ng Pagbibigay | 1.35 V (also operates at 1.5 V) | — |
| Packhaging | 96-ball TFBGA | 96-ball FBGA |
| Number of Terminals | 96 | — |
| Temperature na Operasyon | 0°C to 85°C | — |
| Latensya ng CAS | Programmable | — |
| Additional Features | Auto precharge, asynchronous reset, ZQ calibration, data mask, dynamic on-chip termination | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Wala sa Halogen | Yes | — |
| Package Shape | RECTANGULAR | — |
| Temperature Grade | OTHER | — |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Supply | — | 2.5 V |
| Operating Temperature (TC) | — | 0°C to 95°C |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| On-Die Termination (ODT) | — | Supported |
| Self-Refresh | — | Temperature-compensated (TCSR) |
| Uri ng Pagpapasok | — | Surface Mount |