K6T0808C1D-DB70 vs K6T0808C1D-DB55 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6T0808C1D-DB70 sa pamamagitan ng Samsung Electronics at K6T0808C1D-DB55 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ Huling Pagbili
Pagsanggunian na paghahambing
| Parametro | K6T0808C1D-DB70 | K6T0808C1D-DB55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Huling Pagbili | Obsolete |
| Uri ng Memory | Volatile SRAM (Static RAM) | Asynchronous Static RAM (SRAM) |
| Memory Organization | 32K x 8 = 256 Kbit | — |
| Density | 256 Kbit (32,768 bytes) | 256 Kbit (32K x 8) |
| Access Time (tAA) | 70 ns | 70 ns (max) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 5 V (typical; 4.5 V min per SRAM class) |
| Operating Current (ICC) | 60 mA (typical) | — |
| Standby Current (ISB1) | 15 uA (typical) | — |
| Temperature na Operasyon | 0C to +70C (commercial) | -40 C to +85 C (industrial) |
| Interface | Parallel, asynchronous, TTL-compatible | — |
| Output Enable (OE) | Yes (active-low) | — |
| Write Enable (WE) | Yes (active-low) | — |
| Chip Enable | CE1 (active-low), CE2 (active-high) | — |
| Width ng Data Bus | 8 bits | — |
| Packhaging | DIP-28 (600 mil, 'DB' code) | 28-pin TSOP1F (Type I, forward) |
| Uri ng Pagpapasok | Through-Hole | Surface Mount |
| Process Technology | CMOS (6T cell) | Samsung advanced CMOS |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: verify on Samsung product page] |
| Level ng MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL classification] |
| Organisasyon | — | 32,768 words x 8 bits |
| Standby Current | — | [DATA_NEEDED: typical ISB1 in uA] |
| Operating Current | — | [DATA_NEEDED: typical ICC in mA] |
| Type ng Output | — | Three-state, bidirectional DQs |
| I/O Logic Level | — | TTL-compatible |
| Data Retention Voltage | — | [DATA_NEEDED: VDR minimum in V] |
| Lead-Free | — | [DATA_NEEDED: confirm] |