K6T0808C1D-DB70 vs K6T0808C1D-DB55 比較
詳細並排比較 K6T0808C1D-DB70 由 Samsung Electronics 與 K6T0808C1D-DB55 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Samsung Electronics
K6T0808C1D-DB70 - 256Kbit (32Kx8) CMOS SRAM 70ns DIP-28 | Samsung
K6T0808C1D-DB70 ⚠ 最後購買機會
規格比較
| 參數 | K6T0808C1D-DB70 | K6T0808C1D-DB55 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 最後購買 | Obsolete |
| 記憶體類型 | Volatile SRAM (Static RAM) | Asynchronous Static RAM (SRAM) |
| Memory Organization | 32K x 8 = 256 Kbit | — |
| Density | 256 Kbit (32,768 bytes) | 256 Kbit (32K x 8) |
| Access Time (tAA) | 70 ns | 70 ns (max) |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | 5 V (typical; 4.5 V min per SRAM class) |
| Operating Current (ICC) | 60 mA (typical) | — |
| Standby Current (ISB1) | 15 uA (typical) | — |
| 工作溫度 | 0C to +70C (commercial) | -40 C to +85 C (industrial) |
| 介面 | Parallel, asynchronous, TTL-compatible | — |
| Output Enable (OE) | Yes (active-low) | — |
| Write Enable (WE) | Yes (active-low) | — |
| Chip Enable | CE1 (active-low), CE2 (active-high) | — |
| 資料匯流排寬度 | 8 bits | — |
| 封裝 | DIP-28 (600 mil, 'DB' code) | 28-pin TSOP1F (Type I, forward) |
| 安裝類型 | Through-Hole | Surface Mount |
| Process Technology | CMOS (6T cell) | Samsung advanced CMOS |
| RoHS 狀態 | [DATA_NEEDED: RoHS compliance status] | [DATA_NEEDED: verify on Samsung product page] |
| MSL 等級 | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL classification] |
| 組織 | — | 32,768 words x 8 bits |
| Standby Current | — | [DATA_NEEDED: typical ISB1 in uA] |
| Operating Current | — | [DATA_NEEDED: typical ICC in mA] |
| 輸出類型 | — | Three-state, bidirectional DQs |
| I/O Logic Level | — | TTL-compatible |
| Data Retention Voltage | — | [DATA_NEEDED: VDR minimum in V] |
| Lead-Free | — | [DATA_NEEDED: confirm] |