K9MDG08U5M vs K9PDG08U5M Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9MDG08U5M sa pamamagitan ng Samsung Electronics at K9PDG08U5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ Nakahanda
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Tapus ng Buhay

Pagsanggunian na paghahambing

Parametro K9MDG08U5M K9PDG08U5M
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs EEPROM
Katayuan ng Lifecycle Aktibo Tapus ng Buhay
Uri ng Memory MLC Large Block NAND Flash NAND Flash (SLC)
Density 16 Gbit (2 GB) 4 Gbit
Organisasyon 16G x 8 bit x8 (multiplexed I/O)
Cell Type MLC (2 bits per cell) —
Supply Voltage Min 2.7 V —
Supply Voltage Max 3.6 V —
Interface Asynchronous x8 multiplexed address/data —
Packhaging 48-pin TSOP1 dual stacked, 12 mm x 20 mm TSOP1-48
Terminals 48 —
Circuits 1 —
Die Configuration Dual stacked —
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: block size]
Page Read Time (tR) [DATA_NEEDED: tR] —
Program Time (tPROG) [DATA_NEEDED: tPROG] —
Tindminan RoHS unknown [DATA_NEEDED: RoHS status]
Volte ng Pagbibigay — [DATA_NEEDED: supply voltage range]
Page Read Time — [DATA_NEEDED: page read time]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Ready/Busy Output — Yes (R/B, open-drain)
Write Protect Pin — Yes (/WP)
Endurance — [DATA_NEEDED: program/erase cycles]

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