K9PDG08U5M vs K9DVGB8U5M Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9PDG08U5M sa pamamagitan ng Samsung Electronics at K9DVGB8U5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Tapus ng Buhay
Samsung Electronics
K9DVGB8U5M K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M - Samsung NAND Flash Memory Chip | Samsung

K9DVGB8U5M ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro K9PDG08U5M K9DVGB8U5M
Brand Samsung Electronics Samsung Electronics
Kategorya EEPROM Memory ICs
Katayuan ng Lifecycle Tapus ng Buhay Aktibo
Uri ng Memory NAND Flash (SLC) NAND Flash
Density 4 Gbit —
Organisasyon x8 (multiplexed I/O) [DATA_NEEDED: capacity organization]
Volte ng Pagbibigay [DATA_NEEDED: supply voltage range] [DATA_NEEDED: VCC range]
Packhaging TSOP1-48 [DATA_NEEDED: package type and dimensions]
Uri ng Pagpapasok Surface Mount Surface Mount
Page Size [DATA_NEEDED: page size] [DATA_NEEDED: main page size]
Block Size [DATA_NEEDED: block size] [DATA_NEEDED: erase block size]
Page Read Time [DATA_NEEDED: page read time] —
Page Program Time [DATA_NEEDED: page program time] —
Block Erase Time [DATA_NEEDED: block erase time] —
Access Interface Asynchronous multiplexed address/data, CLE/ALE control —
Ready/Busy Output Yes (R/B, open-drain) —
Write Protect Pin Yes (/WP) —
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: temperature range]
Endurance [DATA_NEEDED: program/erase cycles] [DATA_NEEDED: program/erase cycles]
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Interface — Asynchronous x8-bit I/O
Read Time (tR) — [DATA_NEEDED: page read cycle time]
Program Time (tPROG) — [DATA_NEEDED: page program time]
Erase Time (tBERS) — [DATA_NEEDED: block erase time]
Data Retention — [DATA_NEEDED: retention specification]
Access Interface Signals — CLE, ALE, WE, RE, CE, R/B, WP
Bad Block Management — Host-managed (controller ECC and bad-block table required)

Mga Datasheets at Resources

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