K9PDG08U5M vs K9DVGB8U5M 比較
詳細並排比較 K9PDG08U5M 由 Samsung Electronics 與 K9DVGB8U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K9PDG08U5M | K9DVGB8U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 類別 | EEPROM | Memory ICs |
| 生命週期狀態 | 停產終止 | 啟用中 |
| 記憶體類型 | NAND Flash (SLC) | NAND Flash |
| Density | 4 Gbit | — |
| 組織 | x8 (multiplexed I/O) | [DATA_NEEDED: capacity organization] |
| 供應電壓 | [DATA_NEEDED: supply voltage range] | [DATA_NEEDED: VCC range] |
| 封裝 | TSOP1-48 | [DATA_NEEDED: package type and dimensions] |
| 安裝類型 | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: main page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: erase block size] |
| Page Read Time | [DATA_NEEDED: page read time] | — |
| Page Program Time | [DATA_NEEDED: page program time] | — |
| Block Erase Time | [DATA_NEEDED: block erase time] | — |
| Access Interface | Asynchronous multiplexed address/data, CLE/ALE control | — |
| Ready/Busy Output | Yes (R/B, open-drain) | — |
| Write Protect Pin | Yes (/WP) | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: temperature range] |
| Endurance | [DATA_NEEDED: program/erase cycles] | [DATA_NEEDED: program/erase cycles] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance] |
| 介面 | — | Asynchronous x8-bit I/O |
| Read Time (tR) | — | [DATA_NEEDED: page read cycle time] |
| Program Time (tPROG) | — | [DATA_NEEDED: page program time] |
| Erase Time (tBERS) | — | [DATA_NEEDED: block erase time] |
| Data Retention | — | [DATA_NEEDED: retention specification] |
| Access Interface Signals | — | CLE, ALE, WE, RE, CE, R/B, WP |
| Bad Block Management | — | Host-managed (controller ECC and bad-block table required) |