K9XXG08U0M vs K9PDG08U5M Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng K9XXG08U0M sa pamamagitan ng Samsung Electronics at K9PDG08U5M sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9XXG08U0M K9XXG08U0M - 8Gbit SLC NAND Flash 3.3V | Samsung

K9XXG08U0M - 8Gbit SLC NAND Flash 3.3V | Samsung

K9XXG08U0M Obsolete
Samsung Electronics
K9PDG08U5M K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics

K9PDG08U5M ✗ Tapus ng Buhay

Pagsanggunian na paghahambing

Parametro K9XXG08U0M K9PDG08U5M
Brand Samsung Electronics Samsung Electronics
Kategorya Memory ICs EEPROM
Katayuan ng Lifecycle Obsolete Tapus ng Buhay
Uri ng Memory NAND Flash NAND Flash (SLC)
Density 8 G-bit 4 Gbit
Organisasyon 1G x 8 bit x8 (multiplexed I/O)
Spare Area 256 M-bit (per K9K8G08U0M) —
Volte ng Pagbibigay 2.7 V to 3.6 V (3.3V device) [DATA_NEEDED: supply voltage range]
Interface 8-bit parallel NAND (command/address/data multiplexed) —
Page Read Time 20 us [DATA_NEEDED: page read time]
Packhaging 48-pin TSOP-I TSOP1-48
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Access Interface Standard Samsung legacy NAND command set —
Bad Block Management Factory bad block marking (host-managed ECC required) —
Cell Type SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) —
ECC Requirement External ECC by host controller —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS status]
Level ng MSL [DATA_NEEDED: moisture sensitivity level] —
Page Size — [DATA_NEEDED: page size]
Block Size — [DATA_NEEDED: block size]
Page Program Time — [DATA_NEEDED: page program time]
Block Erase Time — [DATA_NEEDED: block erase time]
Access Interface — Asynchronous multiplexed address/data, CLE/ALE control
Ready/Busy Output — Yes (R/B, open-drain)
Write Protect Pin — Yes (/WP)
Endurance — [DATA_NEEDED: program/erase cycles]

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