K9XXG08U0M vs K9PDG08U5M مقایسه
مقایسه دقیق کنار به کنار K9XXG08U0M توسط Samsung Electronics و K9PDG08U5M توسط Samsung Electronics. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ پایان تولیدمقایسه مشخصات
| پارامتر | K9XXG08U0M | K9PDG08U5M |
|---|---|---|
| برند | Samsung Electronics | Samsung Electronics |
| دسته‌بندی | Memory ICs | EEPROM |
| وضعیت چرخه عمر | Obsolete | پایان عمر محصول |
| نوع حافظه | NAND Flash | NAND Flash (SLC) |
| Density | 8 G-bit | 4 Gbit |
| سازمان | 1G x 8 bit | x8 (multiplexed I/O) |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| ولتاژ تغذیه | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage range] |
| رابط | 8-bit parallel NAND (command/address/data multiplexed) | — |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| بسته‌بندی | 48-pin TSOP-I | TSOP1-48 |
| نوع نصب | Surface Mount | Surface Mount |
| دمای کاری | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | — |
| ECC Requirement | External ECC by host controller | — |
| وضعیت RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| سطح MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |