M29W160EB70N3E vs M29W800FB70N3F Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng M29W160EB70N3E sa pamamagitan ng Micron Technology at M29W800FB70N3F sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Micron Technology
M29W160EB70N3E M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E - 16Mbit NOR Flash 70ns 48-TSOP | Micron

M29W160EB70N3E ✓ Nakahanda
Micron Technology
M29W800FB70N3F M29W800FB70N3F - 8Mb Parallel NOR Flash 70ns TSOP-48 | Micron

M29W800FB70N3F - 8Mb Parallel NOR Flash 70ns TSOP-48 | Micron

M29W800FB70N3F ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro M29W160EB70N3E M29W800FB70N3F
Brand Micron Technology Micron Technology
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory FLASH - NOR NOR Flash (Boot Block)
Laki ng Memory 16 Mbit (2M x8, 1M x16) —
Organisasyon 2M x8 / 1M x16 512K x 16 / 1M x 8
Access Time 70 ns 70 ns
Interface Parallel —
Supply Voltage (VCC) 2.7 V to 3.6 V 2.7 V to 3.6 V
Programming Time 10 us (typical) 10 us per byte/word (typical)
Cell Type SLC NOR —
Temperature na Operasyon -40C to +125C [DATA_NEEDED: Operating Temperature Range]
Packhaging / Kaso 48-TFSOP (0.724 in, 18.40 mm width) —
Uri ng Pagpapasok Surface Mount Surface Mount
Packaging Tray Tape & Reel
Speed Grade -70 —
FBGA Code N/A (TSOP package) —
Tindminan RoHS [DATA_NEEDED: RoHS status] Compliant
Level ng MSL [DATA_NEEDED: moisture sensitivity level] —
Density — 8 Mbit
Uri ng Interface — Parallel
Boot Block Location — Bottom
Block Count — 19 memory blocks (1 boot, 3 parameter, 15 main)
Bus Width Selection — x8 / x16 via BYTE# pin
CFI Compliant — Yes
Erase Suspend/Resume — Yes
Packhaging — TSOP-48 (12 x 20 mm)

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