MRF6S21100HR3 vs MRFG35010NT1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MRF6S21100HR3 sa pamamagitan ng NXP Semiconductors at MRFG35010NT1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | MRF6S21100HR3 | MRFG35010NT1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Uri ng Transistor | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) | GaAs pHEMT RF Power FET |
| Configuration | Single | Unmatched, common source |
| Frequency Band | 2.11 GHz to 2.17 GHz | — |
| Output Power (Average) | 23 W (W-CDMA, CW equivalent ~100 W PEP) | — |
| Power Gain (Typ) | 15.9 dB at 2.14 GHz | — |
| Drain-Source Voltage Rating (VDS max) | 68 V | — |
| Test Supply Voltage (VDD) | 28 V | — |
| Quiescent Drain Current (IDQ) | 950 mA | — |
| Test Drain Current | 950 mA | — |
| Packhaging | NI-780H-2L (ceramic flange) | — |
| Uri ng Pagpapasok | Surface Mount / bolt-down flange | Chassis-mount / flange-bolt |
| Maximum Power Dissipation (Abs) | 388 W | — |
| Operating Mode | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) | — |
| Terminal Position | Dual | — |
| Lead Free Status | [DATA_NEEDED: RoHS/lead-free explicit statement] | Lead free (per datasheet) |
| Tindminan RoHS | [DATA_NEEDED: explicit RoHS compliance statement] | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | — | MRFG35010NT1 |
| Drain-Source Voltage Rating (Vds) | — | 15 V |
| Continuous Drain Current Rating | — | 2.9 A |
| Operating Frequency | — | 3.55 GHz |
| Frequency Range | — | 1.8 GHz to 3.6 GHz |
| Test Voltage | — | 12 V |
| Test Current (quiescent) | — | 180 mA |
| Associated Power Gain | — | 10 dB at 3.55 GHz |
| Output Power | — | 9 W at 3.55 GHz |
| Class of Operation | — | Class AB linear |
| Packhaging / Kaso | — | PLD-1.5 flanged ceramic |
| Supplier Device Package | — | PLD-1.5 |