MRF6S21100HR3 vs MRFG35010NT1 Karşılaştırma

Ayrıntılı yan yana karşılaştırma MRF6S21100HR3 tarafından NXP Semiconductors ve MRFG35010NT1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

NXP Semiconductors
MRF6S21100HR3 MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 - 23W 2.11-2.17GHz W-CDMA RF LDMOS | NXP

MRF6S21100HR3 ✓ Aktif
NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete

Özellik Karşılaştırması

Parametre MRF6S21100HR3 MRFG35010NT1
Marka NXP Semiconductors NXP Semiconductors
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Obsolete
Transistor Türü LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) GaAs pHEMT RF Power FET
Configuration Single Unmatched, common source
Frequency Band 2.11 GHz to 2.17 GHz —
Output Power (Average) 23 W (W-CDMA, CW equivalent ~100 W PEP) —
Power Gain (Typ) 15.9 dB at 2.14 GHz —
Drain-Source Voltage Rating (VDS max) 68 V —
Test Supply Voltage (VDD) 28 V —
Quiescent Drain Current (IDQ) 950 mA —
Test Drain Current 950 mA —
Paket NI-780H-2L (ceramic flange) —
Montaj Türü Surface Mount / bolt-down flange Chassis-mount / flange-bolt
Maximum Power Dissipation (Abs) 388 W —
Operating Mode Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) —
Terminal Position Dual —
Lead Free Status [DATA_NEEDED: RoHS/lead-free explicit statement] Lead free (per datasheet)
RoHS Durumu [DATA_NEEDED: explicit RoHS compliance statement] [DATA_NEEDED: RoHS status]
Manufacturer — NXP Semiconductors (formerly Freescale Semiconductor)
Part Number — MRFG35010NT1
Drain-Source Voltage Rating (Vds) — 15 V
Continuous Drain Current Rating — 2.9 A
Operating Frequency — 3.55 GHz
Frequency Range — 1.8 GHz to 3.6 GHz
Test Voltage — 12 V
Test Current (quiescent) — 180 mA
Associated Power Gain — 10 dB at 3.55 GHz
Output Power — 9 W at 3.55 GHz
Class of Operation — Class AB linear
Paket / Kas — PLD-1.5 flanged ceramic
Supplier Device Package — PLD-1.5

Dökümanlar & Kaynaklar

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