MRF8P26080HSR3 vs MRF8P23160WHSR3 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MRF8P26080HSR3 sa pamamagitan ng NXP Semiconductors at MRF8P23160WHSR3 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

NXP Semiconductors
MRF8P26080HSR3 MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 - 14W, 2.6GHz W-CDMA/LTE RF Power MOSFET | NXP

MRF8P26080HSR3 ✓ Nakahanda
NXP Semiconductors
MRF8P23160WHSR3 MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 - 160W RF Power MOSFET 2.3-2.4GHz | NXP

MRF8P23160WHSR3 Obsolete

Pagsanggunian na paghahambing

Parametro MRF8P26080HSR3 MRF8P23160WHSR3
Brand NXP Semiconductors NXP Semiconductors
Kategorya MOSFETs RF Transceivers
Katayuan ng Lifecycle Aktibo Obsolete
Uri ng Transistor N-Channel Enhancement-Mode Lateral MOSFET N-Channel LDMOS RF Power MOSFET
Technology Gen8 LDMOS (Silicon, Lateral) HV8 Lateral LDMOS
Frequency Range 2500 MHz to 2700 MHz 2300 to 2400 MHz
Average Output Power (P3dB) 14 W (W-CDMA, single-carrier) —
Peak Output Power (CW) 80 W —
Drain-Source Voltage (VDSS max) 65 V —
Operating Drain Voltage (VDD) 28 V nominal —
Test Mode Typical Doherty Single-Carrier W-CDMA —
Application Class Class AB or Class C capable —
Modulation Formats W-CDMA, LTE, OFDM, multi-carrier —
Packhaging NI-780S-4 (ceramic, flange-mount, air-cavity) —
Uri ng Pagpapasok Through-hole flange-mount with screw attachment —
Lead Finish Gold-plated (NiPdAu) —
Lead-Free / RoHS Compliant —
Hanay ng Temperature na Operasyon -40C to +150C (junction) [DATA_NEEDED: operating temperature range]
Manufacturer — NXP USA Inc. (formerly Freescale Semiconductor)
Operating Mode — Enhancement Mode
Test Frequency — 2.32 GHz
V(BR)DSS (Drain-Source Breakdown Voltage) — 65 V
Test Voltage (VDD) — 28 V
Power Gain — 14.1 dB
Average Output Power (P1dB / W-CDMA) — 30 W
Peak Output Power — 160 W
Quiescent Drain Current (IDQA) — 600 mA
Package Type — NI-780-4 (CASE 465M-01), ceramic flangeless
Number of Terminals — 4
Style ng Pagpapasok — Surface Mount (SMD flat lead)
Configuration — Single (Doherty-ready)
Application — Base Station / Macro Cell Power Amplifier
Tindminan RoHS — Compliant
Level ng Sensitivity sa Asid ng Moisture (MSL) — [DATA_NEEDED: MSL rating]

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