MT40A256M16LY-062E vs NT5AD512M16C4-JRU Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT40A256M16LY-062E sa pamamagitan ng Micron Technology at NT5AD512M16C4-JRU sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5AD512M16C4-JRU - DDR4 8Gb 512Mx16 Industrial SDRAM | Nanya
NT5AD512M16C4-JRU ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT40A256M16LY-062E | NT5AD512M16C4-JRU |
|---|---|---|
| Brand | Micron Technology | Nanya Technology |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $83.00 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 256M x16 | 512M x 16 |
| Interface | Parallel | CMOS, DDR4 |
| Clock Frequency | 1.6 GHz | 1600 MHz (3200 Mbps data rate) |
| Access Time (tAA) | 19 ns | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V |
| Data Rate Class | DDR4-2666 (062E speed grade) | — |
| Packhaging | 96-FBGA (7.5 x 13.5 mm) | 96-ball FBGA (PBGA96) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature (IT variant) | -40C to +95C | — |
| Auto Self-Refresh | Yes | Yes |
| Auto Precharge | Yes | Yes |
| Write Leveling | Yes | Yes |
| CRC (Command/Address) | Yes | — |
| Data Mask (DM) | Yes | Yes |
| Dynamic On-Chip Termination (ODT) | Yes | Yes |
| ZQ Calibration | Yes | Yes |
| FBGA Code | D9XSG (AUT variant) | — |
| Tindminan RoHS | Compliant (F = RoHS/lead-free finish) | Green Product (per Nanya product page) |
| Density | — | 8 Gbit |
| CAS Latency (CL) | — | 22 at 1600 MHz |
| Temperature na Operasyon | — | -40 C to +95 C (industrial grade) |
| Built-in Temperature Sensor | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC Function | — | Yes |