MT41K256M16HA-125:E vs K4B4G1646D-BCK00 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16HA-125:E sa pamamagitan ng Micron Technology at K4B4G1646D-BCK00 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-125:E - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125:E ✓ NakahandaSamsung Electronics
K4B4G1646D-BCK00 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BCK00 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K256M16HA-125:E | K4B4G1646D-BCK00 |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organisasyon | 256M x 16 | 256M x 16 |
| Clock Frequency | 800 MHz | — |
| Latensya ng CAS | 13.75 ns | 11 (at 1600 Mbps) |
| Supply Voltage (VDD) | 1.35 V (DDR3L) | — |
| Supply Voltage (VDDQ) | 1.35 V | — |
| Packhaging | 96-FBGA (9x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Bilang ng Pins | 96 | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (TC) | — |
| Tindminan RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Width ng Data Bus | 16 bits | — |
| Logic Family | CMOS | — |
| Speed Grade | — | DDR3-1600 (800 MHz) |
| Rate ng Data | — | 1600 Mbps/pin |
| Volte ng Pagbibigay | — | 1.35V (1.283V to 1.45V) |
| I/O Voltage | — | 1.35V |
| Temperature na Operasyon | — | 0°C to 95°C (Tcase) |
| Number of Banks | — | 8 |
| Burst Length | — | 8, 4 (with burst chop) |
| RoHS | — | Compliant |
| Wala sa Halogen | — | Yes |