MT41K256M16TW-107 vs K4A8G165WB-BCPB Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MT41K256M16TW-107 sa pamamagitan ng Micron Technology at K4A8G165WB-BCPB sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCPB - 8Gb DDR4 SDRAM 2133Mbps x16 | Samsung
K4A8G165WB-BCPB ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MT41K256M16TW-107 | K4A8G165WB-BCPB |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $14.10 | — |
| Uri ng Memory | DDR3L SDRAM | DDR4 SDRAM |
| Laki ng Memory | 4 Gbit | — |
| Organisasyon | 256M x 16 | 512M x 16 |
| Interface | Parallel | DDR4 (synchronous, double data rate) |
| Clock Frequency | 933 MHz (DDR3L-1866) | — |
| Access Time | 20 ns | — |
| Volte ng Pagbibigay | 1.35 V | — |
| Width ng Data Bus | 16 bit | — |
| Packhaging | 96-FBGA (8x14 mm) | 96FBGA (TFBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C (commercial :P grade) | 0C to +85C |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant (per Lisleapex listing) |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Density | — | 8 Gb |
| Rate ng Data | — | 2133 Mbps |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Number of Terminals | — | 96 |
| Package Shape | — | Rectangular, bottom terminal position |
| Die Generation | — | 8Gb B-die |
| Bank Groups | — | DDR4 bank-group architecture |
| Refresh | — | [DATA_NEEDED: refresh specification] |