MW7IC18100NR1 vs MW7IC18100GNR1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng MW7IC18100NR1 sa pamamagitan ng NXP Semiconductors at MW7IC18100GNR1 sa pamamagitan ng NXP Semiconductors. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
NXP Semiconductors
MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP
MW7IC18100NR1 ✓ NakahandaNXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | MW7IC18100NR1 | MW7IC18100GNR1 |
|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors |
| Kategorya | RF Amplifiers | RF Amplifiers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | 1805 MHz to 2050 MHz |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Packhaging / Kaso | TO-270 WB-14 (Case 1618-02), plastic, flat leads | — |
| Uri ng Pagpapasok | Surface Mount (gull-wing flat leads) | Flange-mount, bolt-down |
| Lead Finish | e3 (matte tin) | — |
| Temperature na Operasyon | -40C to +85C (case) | — |
| Body Material | Plastic / Epoxy | — |
| Tindminan RoHS | Compliant | Compliant (lead-free) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MW7IC18100GNR1 |
| Part Family | — | MW7IC18100N series |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | — | 100 W CW (typical) |
| Power Gain | — | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | — | 48 % at 100 W CW |
| Supported Modulations | — | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | — | 180 mA / 1000 mA |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Package / Outline | — | TO-270 WB-14 GULL (flanged ceramic) |
| Package Body Material | — | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | — | Matte Tin (Sn) |
| On-Chip Matching | — | Yes (input matched; output partial) |
| Application | — | Cellular base-station PA, GSM/EDGE/CDMA |