MW7IC18100NR1 vs MW7IC18100GNR1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma MW7IC18100NR1 tarafından NXP Semiconductors ve MW7IC18100GNR1 tarafından NXP SemiconductorsAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
NXP Semiconductors
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
MW7IC18100GNR1 ✓ AktifÖzellik Karşılaştırması
| Parametre | MW7IC18100NR1 | MW7IC18100GNR1 |
|---|---|---|
| Marka | NXP Semiconductors | NXP Semiconductors |
| Kategori | RF Amplifiers | RF Amplifiers |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Product Type | RF LDMOS Wideband Integrated Power Amplifier | — |
| Frequency Range | 1.805 GHz to 2.05 GHz | 1805 MHz to 2050 MHz |
| Output Power (CW, typical) | 100 W (50 dBm) | — |
| Power Gain (typical) | 30 dB | — |
| P1dB (typical) | 25 W (44 dBm) CW | — |
| Supply Voltage (VDD) | 24 V to 32 V (28 V typical) | — |
| Supply Current (typical) | 1.18 A | — |
| RF Modulation Support | GSM, GSM EDGE, CDMA, W-CDMA | — |
| VSWR Ruggedness | 5:1 stable into mismatch | — |
| Spurious (100 mW to 5 W CW) | Below -60 dBc | — |
| Paket / Kas | TO-270 WB-14 (Case 1618-02), plastic, flat leads | — |
| Montaj Türü | Surface Mount (gull-wing flat leads) | Flange-mount, bolt-down |
| Lead Finish | e3 (matte tin) | — |
| İşletim Sıcaklığı | -40C to +85C (case) | — |
| Body Material | Plastic / Epoxy | — |
| RoHS Durumu | Compliant | Compliant (lead-free) |
| Manufacturer | — | NXP Semiconductors (formerly Freescale) |
| Part Number | — | MW7IC18100GNR1 |
| Part Family | — | MW7IC18100N series |
| Device Type | — | RF LDMOS Wideband Integrated Power Amplifier |
| Operating Voltage (VDD) | — | 24 V to 32 V (28 V typical) |
| Output Power (Pout) | — | 100 W CW (typical) |
| Power Gain | — | 27 dB to 30 dB (typical) |
| Power-Added Efficiency (PAE) | — | 48 % at 100 W CW |
| Supported Modulations | — | GSM, GSM EDGE, CDMA |
| Quiescent Current (IDQ1 / IDQ2) | — | 180 mA / 1000 mA |
| Technology | — | LDMOS (Laterally Diffused MOS) |
| Package / Outline | — | TO-270 WB-14 GULL (flanged ceramic) |
| Package Body Material | — | Plastic / Epoxy over ceramic carrier |
| Terminal Finish | — | Matte Tin (Sn) |
| On-Chip Matching | — | Yes (input matched; output partial) |
| Application | — | Cellular base-station PA, GSM/EDGE/CDMA |