MX30LF4GE8AB vs K9F4G08U0B-PCB0 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng MX30LF4GE8AB sa pamamagitan ng Macronix at K9F4G08U0B-PCB0 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro MX30LF4GE8AB K9F4G08U0B-PCB0
Brand Macronix Samsung Electronics
Kategorya Memory ICs Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory NAND Flash (SLC) NAND Flash (SLC, asynchronous)
Density 4 Gbit (512 M x 8) 4 Gbit (512 MB)
Operating Voltage (VCC) 2.7 V to 3.6 V —
Interface Parallel (asynchronous) 8-bit multiplexed NAND I/O
Access Time 20 ns —
Page Size 2112 bytes (2048 + 64 spare) (2 K + 64) byte
Block Size 64 pages (128 KB + 4 KB spare) (128 K + 4 K) byte
Bus Width 8-bit (multiplexed I/O) —
Standard Compliance ONFI 1.0 —
Program/Erase Cycles [DATA_NEEDED: P/E endurance cycles] —
Data Retention [DATA_NEEDED: retention years] —
Packhaging 48-pin TSOP Type-I (48-TSOP) TSOP1-48 (12 mm x 20 mm, lead-free)
Temperature na Operasyon -40C to +85C (industrial) —
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL [DATA_NEEDED: MSL rating] —
Tindminan RoHS Compliant Lead-free (Pb-free), RoHS compliant
Status Polling R/B# open-drain output —
Organisasyon — (512M + 16M) x 8 bit
Data Register — (2K + 64) x 8 bit
Supply Voltage (VCC) — 2.7 V to 3.6 V
Operating Temperature (commercial) — 0C to +70C
Program/Erase — Automatic, on-chip page buffer
ECC Requirement — External (1-bit/512B minimum, 4-bit recommended)
Package Suffix Code — -PCB0 (TSOP1, 3.3 V, commercial, lead-free)

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