MX30LF4GE8AB vs K9F4G08U0B-PCB0 比較

詳細並排比較 MX30LF4GE8AB 由 Macronix 與 K9F4G08U0B-PCB0 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9F4G08U0B-PCB0 K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 - 4Gbit NAND Flash, 3.3V TSOP-48 | Samsung

K9F4G08U0B-PCB0 ✓ 啟用中

規格比較

參數 MX30LF4GE8AB K9F4G08U0B-PCB0
品牌 Macronix Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NAND Flash (SLC) NAND Flash (SLC, asynchronous)
Density 4 Gbit (512 M x 8) 4 Gbit (512 MB)
Operating Voltage (VCC) 2.7 V to 3.6 V —
介面 Parallel (asynchronous) 8-bit multiplexed NAND I/O
Access Time 20 ns —
Page Size 2112 bytes (2048 + 64 spare) (2 K + 64) byte
Block Size 64 pages (128 KB + 4 KB spare) (128 K + 4 K) byte
Bus Width 8-bit (multiplexed I/O) —
Standard Compliance ONFI 1.0 —
Program/Erase Cycles [DATA_NEEDED: P/E endurance cycles] —
Data Retention [DATA_NEEDED: retention years] —
封裝 48-pin TSOP Type-I (48-TSOP) TSOP1-48 (12 mm x 20 mm, lead-free)
工作溫度 -40C to +85C (industrial) —
安裝類型 Surface Mount Surface Mount
MSL 等級 [DATA_NEEDED: MSL rating] —
RoHS 狀態 Compliant Lead-free (Pb-free), RoHS compliant
Status Polling R/B# open-drain output —
組織 — (512M + 16M) x 8 bit
Data Register — (2K + 64) x 8 bit
Supply Voltage (VCC) — 2.7 V to 3.6 V
Operating Temperature (commercial) — 0C to +70C
Program/Erase — Automatic, on-chip page buffer
ECC Requirement — External (1-bit/512B minimum, 4-bit recommended)
Package Suffix Code — -PCB0 (TSOP1, 3.3 V, commercial, lead-free)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價