NT5CC256M16ER-EK vs H5TC4G63AFR-PBJ Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5CC256M16ER-EK sa pamamagitan ng Nanya Technology at H5TC4G63AFR-PBJ sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | NT5CC256M16ER-EK | H5TC4G63AFR-PBJ |
|---|---|---|
| Brand | Nanya Technology | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gbit | — |
| Organisasyon | 256M x 16 | — |
| Volte ng Pagbibigay | 1.35 V | 1.35 V |
| Rate ng Data | 933 MHz (DDR3L-1866) | [DATA_NEEDED: Data rate (e.g., 1600 Mbps)] |
| Packhaging | TFBGA-96 | 96-ball TFBGA |
| Temperature na Operasyon | 0°C to +95°C | — |
| Latensya ng CAS | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS Latency] |
| Burst Length | 8, 4 (with burst chop) | — |
| Interface | Parallel | — |
| Uri ng Pagpapasok | Surface Mount | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS Status] |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | Yes |
| Write Leveling | Yes | Yes |
| Dynamic ODT | Yes | — |
| ZQ Calibration | Yes | Yes |
| Laki ng Memory | — | 4 Gb (256M x 16) |
| Temperature Grade | — | Industrial (-40°C to +95°C) |
| Refresh Cycles | — | 8192 |
| Package Shape | — | Rectangular |
| Number of Terminals | — | 96 |
| Access Time | — | 0.225 ns (from H5TC4G63AFR-PBR datasheet) |
| Data Mask | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |