SPP80P06PHXKSA1 vs IPB35N10S3L26ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng SPP80P06PHXKSA1 sa pamamagitan ng Infineon at IPB35N10S3L26ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB35N10S3L26ATMA1 - 100V 35A N-Ch OptiMOS-T MOSFET | Infineon
IPB35N10S3L26ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | SPP80P06PHXKSA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -80 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 340 W | — |
| Packhaging | PG-TO220-3-1 (TO-220-3, through-hole) | — |
| Uri ng Pagpapasok | Through Hole | Surface Mount |
| Temperature ng Junction na Operasyon | -55 C to +175 C | — |
| Technology | OptiMOS P-channel trench MOSFET | — |
| Bilang ng Pins | 3 | — |
| Gate Threshold VGS(th) type | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max in mOhm] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg in nC] | — |
| Avalanche Energy Rated | [DATA_NEEDED: EAS rating] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Standard Package Quantity (Tube) | 50 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| Bilang ng Pin | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |