SPP80P06PHXKSA1 vs IPB35N10S3L26ATMA1 比較
詳細並排比較 SPP80P06PHXKSA1 由 Infineon 與 IPB35N10S3L26ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | SPP80P06PHXKSA1 | IPB35N10S3L26ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity | P-Channel | — |
| Drain-Source Voltage (VDS) | -60 V | — |
| Continuous Drain Current (ID) at TC=25C | -80 A | — |
| Maximum Power Dissipation (PD) at TC=25C | 340 W | — |
| 封裝 | PG-TO220-3-1 (TO-220-3, through-hole) | — |
| 安裝類型 | Through Hole | Surface Mount |
| 工作接面溫度 | -55 C to +175 C | — |
| Technology | OptiMOS P-channel trench MOSFET | — |
| 腳位數 | 3 | — |
| Gate Threshold VGS(th) type | [DATA_NEEDED: VGS(th) typical value] | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max in mOhm] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg in nC] | — |
| Avalanche Energy Rated | [DATA_NEEDED: EAS rating] | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| Standard Package Quantity (Tube) | 50 | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS-T |
| Channel Type | — | N-Channel |
| Maximum Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at TC | — | 35 A |
| Power Dissipation (PD) at TC | — | 71 W |
| Package Type | — | PG-TO263-3 (D2PAK-2) |
| 腳位數 | — | 3 (Gate, Drain, Source) |
| Channel Mode | — | Enhancement |
| RDS(on) (typical per Infineon product page) | — | 26.3 mΩ |
| Typical Gate Charge Qg @ Vgs | — | 80 nC |
| Maximum Drain-Source Resistance Rds | — | 1.7 mΩ (per RS Components listing) |
| Minimum Operating Temperature | — | -55 C |
| Maximum Power Dissipation Pd | — | 81 W (per RS Components listing) |
| AEC-Q101 Qualification | — | [DATA_NEEDED: AEC-Q101 qualification status] |