BSZ065N03LSATMA1 vs BSC020N03LSGATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSZ065N03LSATMA1 tarafından Infineon ve BSC020N03LSGATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | BSZ065N03LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS 3 |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| Paket / Kas | PG-TSDSON-8-FL (S308) | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55 C to +150 C (junction) |
| MSL Seviyesi | 1 | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| RoHS Durumu | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.2 V (typical range, per datasheet) |
| On-State Resistance (RDS(on)) at VGS=10V | — | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc=25C | — | 96 W |
| Packaging | — | Tape & Reel |