BSZ065N03LSATMA1 vs BSC020N03LSGATMA1 비교
다음의 상세 나란히 비교: BSZ065N03LSATMA1 제조: Infineon 및 BSC020N03LSGATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
BSC020N03LSGATMA1 - 30V N-Channel OptiMOS 3, 100A TDSON-8 | Infineon
BSC020N03LSGATMA1 ✓ 활성사양 비교
| 파라미터 | BSZ065N03LSATMA1 | BSC020N03LSGATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.38 | $0.42 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 30V | OptiMOS 3 |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | 30 V |
| Continuous Drain Current (ID) at TA=25C | 12 A | — |
| Continuous Drain Current (ID) at TC=25C | 40 A | — |
| Power Dissipation (PD) at TA=25C | 2.1 W | — |
| Power Dissipation (PD) at TC=25C | 26 W | — |
| 패키지 / 케이스 | PG-TSDSON-8-FL (S308) | PG-TDSON-8-1 (TDSON EP, 5 mm x 6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | — |
| Technology | Trench MOSFET (OptiMOS) | — |
| 동작 온도 범위 | -55C to +150C (junction) | -55 C to +150 C (junction) |
| MSL 레벨 | 1 | 1 (per JEDEC J-STD-020, per Infineon datasheet) |
| RoHS 상태 | Compliant | Compliant |
| Gate Drive (typical) | 4.5 V | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 28 A |
| Continuous Drain Current (ID) at Tc=25C | — | 100 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th)) | — | 1 V to 2.2 V (typical range, per datasheet) |
| On-State Resistance (RDS(on)) at VGS=10V | — | approximately 2.0 mOhm |
| Power Dissipation (PD) at Ta=25C | — | 2.5 W |
| Power Dissipation (PD) at Tc=25C | — | 96 W |
| Packaging | — | Tape & Reel |