IPP120N08S403AKSA1 vs FDP100N10 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IPP120N08S403AKSA1 tarafından Infineon ve FDP100N10 tarafından onsemiAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IPP120N08S403AKSA1 | FDP100N10 |
|---|---|---|
| Marka | Infineon | onsemi |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 120 A | — |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C | — |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) | — |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max | — |
| Total Gate Charge (Qg) | 167 nC | — |
| Input Capacitance (Ciss) | 11550 pF | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W | — |
| İşletim Jant Sıcaklığı | -55 C to +175 C | — |
| Paket | TO-220-3-1 (PG-TO220-3-1) | TO-220-3 (TO-220AB) |
| Montaj Türü | Through Hole | Through Hole |
| MSL Seviyesi | MSL1 (peak reflow up to 260 C) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100% avalanche-tested | — |
| RoHS Durumu | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Channel Type | N-Channel enhancement mode | — |
| Technology Family | OptiMOS | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 75 A (Tc) |
| On-State Resistance (RDS(on) Max) | — | 10 mOhm |
| Power Dissipation (PD) | — | 208 W (Tc) |
| Gate-Source Voltage (VGS Max) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th) Max) | — | 4.5 V @ 250 uA |
| Technology | — | PowerTrench MOSFET |
| Configuration | — | Single MOSFET |
| Product Series | — | PowerTrench |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| Montaj Stili | — | Through Hole / TO-220AB package |
| Manufacturer | — | Fairchild Semiconductor (onsemi) |
| Gate Charge (Qg) | — | [DATA_NEEDED: gate charge] |