IPP120N08S403AKSA1 vs FDP100N10 مقایسه
مقایسه دقیق کنار به کنار IPP120N08S403AKSA1 توسط Infineon و FDP100N10 توسط onsemi. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
مقایسه مشخصات
| پارامتر | IPP120N08S403AKSA1 | FDP100N10 |
|---|---|---|
| برند | Infineon | onsemi |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Drain-to-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID, Tc) | 120 A | — |
| Pulsed Drain Current (bondwire-limited) | 245 A at 25 C | — |
| Maximum Power Dissipation (Ptot) | 278 W (Tc) | — |
| On-State Resistance (RDS(on)) | 2.8 mOhm typical at VGS=10 V, ID=100 A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V max | — |
| Total Gate Charge (Qg) | 167 nC | — |
| Input Capacitance (Ciss) | 11550 pF | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.54 K/W | — |
| دمای اتصال کاری | -55 C to +175 C | — |
| بسته‌بندی | TO-220-3-1 (PG-TO220-3-1) | TO-220-3 (TO-220AB) |
| نوع نصب | Through Hole | Through Hole |
| سطح MSL | MSL1 (peak reflow up to 260 C) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| Avalanche Rating | 100% avalanche-tested | — |
| وضعیت RoHS | Compliant (Green Product) | [DATA_NEEDED: RoHS status] |
| Channel Type | N-Channel enhancement mode | — |
| Technology Family | OptiMOS | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) | — | 75 A (Tc) |
| On-State Resistance (RDS(on) Max) | — | 10 mOhm |
| Power Dissipation (PD) | — | 208 W (Tc) |
| Gate-Source Voltage (VGS Max) | — | +/-20 V |
| Gate Threshold Voltage (VGS(th) Max) | — | 4.5 V @ 250 uA |
| Technology | — | PowerTrench MOSFET |
| Configuration | — | Single MOSFET |
| Product Series | — | PowerTrench |
| Avalanche Rated | — | Yes (100% avalanche tested) |
| سبک نصب | — | Through Hole / TO-220AB package |
| Manufacturer | — | Fairchild Semiconductor (onsemi) |
| Gate Charge (Qg) | — | [DATA_NEEDED: gate charge] |