IRFR220NPBF vs IRLR120NTRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFR220NPBF tarafından Infineon ve IRLR120NTRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFR220NPBF | IRLR120NTRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 200 V | — |
| Continuous Drain Current (ID) at TC=25C | 5 A | — |
| Power Dissipation (PD) at TC=25C | 43 W | — |
| Static Drain-Source On-Resistance (RDS(on)) max | 0.6 ohm at VGS = 10 V | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Paket / Kas | TO-252AA (DPAK) | — |
| Technology | HEXFET (Planar) | HEXFET (Fifth Generation, planar) |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 13.3 nC |
| İşletim Sıcaklığı Aralığı | -55C to +150C (junction) | -55C to +175C (junction) |
| Lead-Free / RoHS | Yes, lead-free (PBF suffix) | Yes (PBF suffix indicates lead-free) |
| Avalanche Energy Rated | Yes (per datasheet characterization) | — |
| Pin Sayısı | 3 (Gate, Drain, Source) plus tab | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 10 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Idm] |
| Rds(on) Max at Vgs=10V | — | 185 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Power Dissipation (Pd) at Tc=25C | — | 48 W |
| Paket | — | TO-252AA (DPAK), 3-pin surface mount |
| Avalanche Energy Rating | — | Fully avalanche rated |