IRLR024NTRPBF vs IRLL024ZTRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRLR024NTRPBF tarafından Infineon ve IRLL024ZTRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRLR024NTRPBF | IRLL024ZTRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel MOSFET, Metal Oxide | N-Channel enhancement-mode |
| Drain-to-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Continuous Drain Current (Id) at Tc=100C | [DATA_NEEDED: Id at Tc=100C] | — |
| Rds(on) Max @ Vgs=10V | 65 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 1.0 V to 2.0 V | — |
| Total Gate Charge (Qg) | 10 nC (typical) | — |
| Power Dissipation (Pd) at Tc=25C | 45 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C | — |
| Montaj Türü | Surface Mount | Surface Mount |
| Paket | TO-252AA (DPAK) | SOT-223 (TO-261-4) |
| Technology | HEXFET (Advanced Process Technology) | HEXFET Power MOSFET (trench-gate) |
| Avalanche Rated | Yes (fully avalanche rated) | — |
| Gate Drive Level | Logic-Level | — |
| Lead-Free / RoHS | Lead-Free / RoHS Compliant | — |
| MSL Seviyesi | 1 (per JEDEC J-STD-020) | 1 (unlimited floor life) |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Drain-Source Voltage (VDS) max | — | 55 V |
| Gate-Source Voltage (VGS) max | — | ±16 V |
| Continuous Drain Current (ID) at TC=25°C | — | 5 A |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | — | 60 mΩ |
| Gate Threshold Voltage (VGS(th)) | — | 1.0 V to 2.5 V (logic-level, drives from 3.3 V GPIO) |
| Total Gate Charge (Qg) typical | — | 7 nC |
| Power Dissipation (PD) at TA=25°C | — | 1 W |
| Operating Junction Temperature (TJ) | — | -55 °C to +150 °C |
| RoHS Durumu | — | Compliant |