BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon
Référence : BSC026N04LSATMA1 ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.34 | $134,00 |
| 500 | $1.12 | $560,00 |
| 1 000 | $0.96 | $960,00 |
| 5 000 | $0.78 | $3 900,00 |
BSC026N04LSATMA1 Présentation
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy, this part belongs to: power MOSFET → discrete semiconductor → transistor → semiconductor. N-channel MOSFETs such as the BSC026N04LSATMA1 conduct when a positive gate-source voltage (VGS) is applied, making them the preferred low-side and high-side switch in buck, boost, and half-bridge topologies.
Key differentiators include Infineon's OptiMOS™ 5 process technology, an integrated Schottky-like monolithically optimized body diode for reduced reverse-recovery charge (Qrr), and a gate charge (Qg) optimized for high-frequency operation. The 2.6 mΩ RDS(on) at VGS=10 V and thermally efficient PG-TDSON-8-6 package minimize conduction losses and improve power density. The low figure-of-merit (FOM = RDS(on) × Qg) makes this device well suited to server, telecom, and DC-DC converter designs switching at 300 kHz to 1 MHz.
Architecturally, the OptiMOS™ 5 generation uses a trench-gate structure that lowers cell pitch while improving avalanche ruggedness. The resulting die shrinks gate charge without sacrificing SOA, enabling high-current pulses up to 400 A (pulsed, limited by package). Compared to planar predecessors, switching losses are typically reduced by 30-50%.
Typical applications include synchronous rectification in 12 V and 24 V switched-mode power supplies (SMPS), server and datacom VRM stages, motor-drive H-bridges, hot-swap and OR-ing controllers, and battery protection circuits in power tools. The PG-TDSON-8-6 footprint is widely adopted across Infineon's OptiMOS™ family, simplifying multi-variant PCB designs.
When designing with this part, ensure the gate-drive voltage reaches 10 V for full RDS(on) rating, use a Kelvin-source connection where possible to suppress source-inductance ringing, and observe the 63 W (Tc) power dissipation limit at the case. The exposed pad must be soldered to a sufficient copper pour (≥1 sq inch) to maintain junction temperature within SOA. This page synthesizes drop-in alternatives, distributor pricing benchmarks, and design considerations beyond the manufacturer datasheet.
Alternatives de remplacement direct pour BSC026N04LSATMA1 — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec BSC026N04LSATMA1 (même facteur de forme et même empreinte) — différant par Package, Technology, Operating Temperature Range, MSL Level, Continuous Drain Current (ID, Ta).
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
BSC019N04LSGATMA1
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC050N04LSGATMA1
✅ Remplacement direct✓ En stock
$0.41 / unité
Voir la fiche technique →BSC016N04LSGATMA1
✅ Remplacement direct ⚠️ Spécifications non vérifiées📋 Alternative de référence (hors catalogue)
BSC014N04LSIATMA1
✅ Remplacement direct✓ En stock
$0.39 / unité
Voir la fiche technique →BSC019N04LSTATMA1
✅ Remplacement direct✓ En stock
$1.21 / unité
Voir la fiche technique →NTMFS0D4N04X
✅ Remplacement direct📋 Alternative de référence (hors catalogue)
BSC026N04LSATMA1 Valeurs maximales et caractéristiques électriques
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID, Ta) | 23 A |
| Continuous Drain Current (ID, Tc=25°C) | 100 A |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 63 W |
| Plage de température de fonctionnement | -55°C to +150°C |
| Boîtier | PG-TDSON-8-6 (TDSON 5x6 mm) |
| Type de montage | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 |
| Channel Type | N-Channel |
| Statut RoHS | Compliant |
Configuration des broches de BSC026N04LSATMA1
| Broche 1 | Gate — Gate drive input (VGS) |
| Broche 2 | Source (Kelvin) — Kelvin source connection for gate return |
| Broche 3 | Source — Source connection |
| Broche 4 | Source — Source connection |
| Broche 5 | Source — Source connection |
| Broche 6 | Source — Source connection |
| Broche 7 | Source — Source connection |
| Broche 8 | Drain (EP) — Drain and exposed thermal pad |
Zone de fonctionnement sûr (DC)
Applications typiques
BSC026N04LSATMA1 convient pour 6 applications: Synchronous Rectification in 12V/24V SMPS, Server and Datacom VRM Stages, DC-DC Converters and POL Regulators, Hot-Swap and OR-ing Controllers, Motor Drive H-Bridges, Battery Protection and Power Tools.
Synchronous Rectification in 12V/24V SMPS
The BSC026N04LSATMA1 is optimized for synchronous-rectifier (SR) stages in 12 V and 24 V switched-mode power supplies, replacing Schottky diodes to cut rectification losses. Its 2.6 mΩ typical RDS(on) at VGS=10 V and integrated Schottky-like body diode deliver low Qrr, suppressing dead-time losses when the SR MOSFET body diode conducts. In a 300 kHz, 30 A buck converter, the SR MOSFET dissipates roughly ID² × RDS(on) = 30² × 2.6 mΩ = 2.34 W, which is comfortably within the 63 W Tc-rated dissipation on a 1 sq inch copper pad. The OptiMOS™ 5 trench-gate process also minimizes gate charge, reducing driver losses in high-frequency designs.
Recommandé
Server and Datacom VRM Stages
In server, telecom, and datacom Voltage-Regulator-Module (VRM) designs, the BSC026N04LSATMA1 serves as the low-side synchronous FET in multi-phase buck converters powering CPUs, GPUs, and ASICs at 0.6-1.8 V from a 12 V bus. Its 2.6 mΩ RDS(on) and high pulsed-current capability (up to 100 A at Tc=25°C) suit the high di/dt and short-pulse duty cycles typical of VRM low-side switches. The PG-TDSON-8-6 footprint is shared across the entire OptiMOS™ 5 family, allowing PCB reuse across 30 A, 50 A, and 70 A design variants. Low Qrr keeps cross-conduction losses small at multi-MHz switching frequencies used in advanced CPU power delivery.
Recommandé
DC-DC Converters and POL Regulators
The BSC026N04LSATMA1 is widely used in point-of-load (POL) DC-DC converters and buck/boost modules converting 12-24 V to lower system rails (5 V, 3.3 V, 1.8 V, 1.0 V). Its low RDS(on) of 2.6 mΩ at VGS=10 V yields high efficiency (>95%) even at heavy load, while the small PG-TDSON-8-6 footprint (5x6 mm) enables compact module designs. Designers favor this part for its low Qrr body diode, which minimizes dead-time-induced voltage spikes and EMI in CCM/DCM transitions. Combined with Infineon's XDPE controller family, this MOSFET builds a complete high-density POL solution for industrial and embedded systems.
Recommandé
Hot-Swap and OR-ing Controllers
In hot-swap, OR-ing, and eFuse circuits that protect server backplanes from inrush current and reverse polarity, the BSC026N04LSATMA1 acts as the series pass element. Its 100 A pulsed drain current rating handles the transient inrush of plug-in cards, while the 2.6 mΩ RDS(on) keeps steady-state voltage drop low when the channel is fully on. The 40 V VDS rating comfortably exceeds the 12 V or 24 V bus plus transients. Designers can drive the gate with a controlled slew-rate controller to limit di/dt, leveraging the MOSFET's linear-mode operation during turn-on.
Recommandé
Motor Drive H-Bridges
The BSC026N04LSATMA1 is well suited as a low-side or half-bridge switch in brushed DC motor drives and small BLDC/PMSM inverter stages up to a few hundred watts. Its 23 A continuous and 100 A pulsed current capability, plus 2.6 mΩ RDS(on), deliver high torque-per-amp efficiency in 12-24 V battery systems. The PG-TDSON-8-6 package dissipates up to 63 W Tc, allowing sustained motor currents without external heatsinking beyond the PCB copper pour. The trench-gate design also provides good avalanche ruggedness for the inductive kickback of motor windings during PWM switching.
Recommandé
Battery Protection and Power Tools
In battery-powered tools, e-bikes, and portable equipment, the BSC026N04LSATMA1 is used as the low-side protection MOSFET or active discharge switch in 18-36 V battery packs. Its 40 V VDS handles multi-cell Li-ion stacks (4-7S), while the 2.6 mΩ RDS(on) minimizes voltage drop during high-current discharge pulses. The OptiMOS™ 5 process offers low Qrr for safe commutation during battery cut-off events, and the rugged PG-TDSON-8-6 package withstands the mechanical shock and thermal cycling typical of cordless tools. Designers combine this MOSFET with companion Infineon gate drivers for a complete battery-management solution.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour BSC026N04LSATMA1 — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | BSC019N04LSGATMA1 | BSC050N04LSGATMA1 | BSC016N04LSGATMA1 | NTMFS0D4N04X |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-6 (5x6 mm) | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) typ @ VGS=10V | 2.6 mΩ | 1.9 mΩ | 5.0 mΩ | 1.6 mΩ | 4.0 mΩ |
| Technology | OptiMOS™ 5 trench | OptiMOS™ 5 trench | OptiMOS™ 5 trench | OptiMOS™ 5 trench | onsemi trench |
Principaux différenciateurs
- Lower RDS(on) than BSC050N04LSGATMA1 in same footprint (vs BSC050N04LSGATMA1)
- Higher RDS(on) but better switching-loss/FOM trade-off vs BSC019N04LSGATMA1 (vs BSC019N04LSGATMA1)
- Smaller footprint than cross-brand equivalents in DPAK/TO-252 (vs NTMFS0D4N04X)
- Integrated Schottky-like body diode (vs Standard planar MOSFETs)
Notes de conception
Estimated: at full-load 23 A continuous and RDS(on) of 2.6 mΩ, conduction loss is approximately ID² × RDS(on) = 23² × 0.0026 = 1.37 W. The PG-TDSON-8-6 with 1 sq inch 1 oz copper pad has RθJA around 50 °C/W, giving a junction-temperature rise of ~69 °C above ambient. Ensure ambient temperature plus this rise stays below the 150 °C maximum junction rating; add a heatsink or expand copper pour if derating margin is tight.
Use the Kelvin-source pin (Pin 2) for the gate-driver return path to decouple the gate loop from the high-current source inductance. This suppresses gate-ring oscillations at high di/dt. Place input ceramic bypass capacitors (≥10 µF X7R) close to the drain pad, and route the high-current loop (drain-source-output inductor) as tight and short as possible to minimize parasitic inductance and EMI.
Do not drive the gate below the threshold voltage (typically 1-2 V) for high-current operation - this risks linear-mode operation and thermal runaway. Always ensure the driver can source/sink at least 2-4 A peak gate current to switch the OptiMOS™ 5 gate charge quickly. Verify the body-diode reverse-recovery (Qrr) and dead-time in synchronous-rectifier topologies to avoid cross-conduction losses.
The PG-TDSON-8-6 drain pad is the exposed thermal pad (Pin 8) and must be soldered directly to a copper pour on the top layer or inner layer via thermal vias. Use an array of 6-9 thermal vias (0.3 mm drill, 1 oz plating) under the pad to spread heat into inner copper planes. Avoid signal traces cutting through the drain-pad copper, as this reduces thermal conductivity and increases RDS(on) effective in operation.
Informations de conformité
RoHS compliant per Infineon product page; REACH compliant per EU SVHC declaration. Standard part is NOT AEC-Q100 qualified; for automotive applications, choose Infineon's automotive-graded variants in the IAUC family. Conflict-minerals compliant per Infineon CMRT declarations.
