BSC026N04LSATMA1 - 40V N-Ch OptiMOS 2.6mΩ MOSFET | Infineon
MPN: BSC026N04LSATMA1 ✓ Hoạt độngBSC026N04LSATMA1 Tóm tắt
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to commutate current in power-conversion circuits. Within the broader taxonomy, this part belongs to: power MOSFET → discrete semiconductor → transistor → semiconductor. N-channel MOSFETs such as the BSC026N04LSATMA1 conduct when a positive gate-source voltage (VGS) is applied, making them the preferred low-side and high-side switch in buck, boost, and half-bridge topologies.
Key differentiators include Infineon's OptiMOS™ 5 process technology, an integrated Schottky-like monolithically optimized body diode for reduced reverse-recovery charge (Qrr), and a gate charge (Qg) optimized for high-frequency operation. The 2.6 mΩ RDS(on) at VGS=10 V and thermally efficient PG-TDSON-8-6 package minimize conduction losses and improve power density. The low figure-of-merit (FOM = RDS(on) × Qg) makes this device well suited to server, telecom, and DC-DC converter designs switching at 300 kHz to 1 MHz.
Architecturally, the OptiMOS™ 5 generation uses a trench-gate structure that lowers cell pitch while improving avalanche ruggedness. The resulting die shrinks gate charge without sacrificing SOA, enabling high-current pulses up to 400 A (pulsed, limited by package). Compared to planar predecessors, switching losses are typically reduced by 30-50%.
Typical applications include synchronous rectification in 12 V and 24 V switched-mode power supplies (SMPS), server and datacom VRM stages, motor-drive H-bridges, hot-swap and OR-ing controllers, and battery protection circuits in power tools. The PG-TDSON-8-6 footprint is widely adopted across Infineon's OptiMOS™ family, simplifying multi-variant PCB designs.
When designing with this part, ensure the gate-drive voltage reaches 10 V for full RDS(on) rating, use a Kelvin-source connection where possible to suppress source-inductance ringing, and observe the 63 W (Tc) power dissipation limit at the case. The exposed pad must be soldered to a sufficient copper pour (≥1 sq inch) to maintain junction temperature within SOA. This page synthesizes drop-in alternatives, distributor pricing benchmarks, and design considerations beyond the manufacturer datasheet.
Bộ thay thế dễ dàng lắp đặt cho BSC026N04LSATMA1 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC026N04LSATMA1 (cùng hình factor và footprint) — khác nhau ở Package, Technology, Operating Temperature Range, MSL Level, Continuous Drain Current (ID, Ta).
BSC019N04LSGATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC050N04LSGATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC016N04LSGATMA1
✅ Drop-In ⚠️ Thông số chưa được xác minh📋 Tham chiếu thay thế (không có trong danh mục)
BSC014N04LSIATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →BSC019N04LSTATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →NTMFS0D4N04X
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC026N04LSATMA1 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS™ 5 N-Channel Power MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Gate-Source Voltage (VGS) max | ±20 V |
| Continuous Drain Current (ID, Ta) | 23 A |
| Continuous Drain Current (ID, Tc=25°C) | 100 A |
| On-Resistance RDS(on) typ @ VGS=10V | 2.6 mΩ |
| Power Dissipation (Ta) | 2.5 W |
| Power Dissipation (Tc) | 63 W |
| Khoảng nhiệt độ hoạt động | -55°C to +150°C |
| Hộp | PG-TDSON-8-6 (TDSON 5x6 mm) |
| Kiểu lắp đặt | Surface Mount |
| Technology | Trench-gate OptiMOS™ 5 |
| Channel Type | N-Channel |
| Trạng thái RoHS | Compliant |
Cấu hình chân BSC026N04LSATMA1
| Chân 1 | Gate — Gate drive input (VGS) |
| Chân 2 | Source (Kelvin) — Kelvin source connection for gate return |
| Chân 3 | Source — Source connection |
| Chân 4 | Source — Source connection |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Source — Source connection |
| Chân 8 | Drain (EP) — Drain and exposed thermal pad |
Khu vực hoạt động an toàn (DC)
Ứng dụng tiêu biểu
BSC026N04LSATMA1 phù hợp cho 6 Áp dụngs: Synchronous Rectification in 12V/24V SMPS, Server and Datacom VRM Stages, DC-DC Converters and POL Regulators, Hot-Swap and OR-ing Controllers, Motor Drive H-Bridges, Battery Protection and Power Tools.
Synchronous Rectification in 12V/24V SMPS
The BSC026N04LSATMA1 is optimized for synchronous-rectifier (SR) stages in 12 V and 24 V switched-mode power supplies, replacing Schottky diodes to cut rectification losses. Its 2.6 mΩ typical RDS(on) at VGS=10 V and integrated Schottky-like body diode deliver low Qrr, suppressing dead-time losses when the SR MOSFET body diode conducts. In a 300 kHz, 30 A buck converter, the SR MOSFET dissipates roughly ID² × RDS(on) = 30² × 2.6 mΩ = 2.34 W, which is comfortably within the 63 W Tc-rated dissipation on a 1 sq inch copper pad. The OptiMOS™ 5 trench-gate process also minimizes gate charge, reducing driver losses in high-frequency designs.
Được đề xuất
Server and Datacom VRM Stages
In server, telecom, and datacom Voltage-Regulator-Module (VRM) designs, the BSC026N04LSATMA1 serves as the low-side synchronous FET in multi-phase buck converters powering CPUs, GPUs, and ASICs at 0.6-1.8 V from a 12 V bus. Its 2.6 mΩ RDS(on) and high pulsed-current capability (up to 100 A at Tc=25°C) suit the high di/dt and short-pulse duty cycles typical of VRM low-side switches. The PG-TDSON-8-6 footprint is shared across the entire OptiMOS™ 5 family, allowing PCB reuse across 30 A, 50 A, and 70 A design variants. Low Qrr keeps cross-conduction losses small at multi-MHz switching frequencies used in advanced CPU power delivery.
Được đề xuất
DC-DC Converters and POL Regulators
The BSC026N04LSATMA1 is widely used in point-of-load (POL) DC-DC converters and buck/boost modules converting 12-24 V to lower system rails (5 V, 3.3 V, 1.8 V, 1.0 V). Its low RDS(on) of 2.6 mΩ at VGS=10 V yields high efficiency (>95%) even at heavy load, while the small PG-TDSON-8-6 footprint (5x6 mm) enables compact module designs. Designers favor this part for its low Qrr body diode, which minimizes dead-time-induced voltage spikes and EMI in CCM/DCM transitions. Combined with Infineon's XDPE controller family, this MOSFET builds a complete high-density POL solution for industrial and embedded systems.
Được đề xuất
Hot-Swap and OR-ing Controllers
In hot-swap, OR-ing, and eFuse circuits that protect server backplanes from inrush current and reverse polarity, the BSC026N04LSATMA1 acts as the series pass element. Its 100 A pulsed drain current rating handles the transient inrush of plug-in cards, while the 2.6 mΩ RDS(on) keeps steady-state voltage drop low when the channel is fully on. The 40 V VDS rating comfortably exceeds the 12 V or 24 V bus plus transients. Designers can drive the gate with a controlled slew-rate controller to limit di/dt, leveraging the MOSFET's linear-mode operation during turn-on.
Được đề xuất
Motor Drive H-Bridges
The BSC026N04LSATMA1 is well suited as a low-side or half-bridge switch in brushed DC motor drives and small BLDC/PMSM inverter stages up to a few hundred watts. Its 23 A continuous and 100 A pulsed current capability, plus 2.6 mΩ RDS(on), deliver high torque-per-amp efficiency in 12-24 V battery systems. The PG-TDSON-8-6 package dissipates up to 63 W Tc, allowing sustained motor currents without external heatsinking beyond the PCB copper pour. The trench-gate design also provides good avalanche ruggedness for the inductive kickback of motor windings during PWM switching.
Được đề xuất
Battery Protection and Power Tools
In battery-powered tools, e-bikes, and portable equipment, the BSC026N04LSATMA1 is used as the low-side protection MOSFET or active discharge switch in 18-36 V battery packs. Its 40 V VDS handles multi-cell Li-ion stacks (4-7S), while the 2.6 mΩ RDS(on) minimizes voltage drop during high-current discharge pulses. The OptiMOS™ 5 process offers low Qrr for safe commutation during battery cut-off events, and the rugged PG-TDSON-8-6 package withstands the mechanical shock and thermal cycling typical of cordless tools. Designers combine this MOSFET with companion Infineon gate drivers for a complete battery-management solution.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC026N04LSATMA1 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC019N04LSGATMA1 | BSC050N04LSGATMA1 | BSC016N04LSGATMA1 | NTMFS0D4N04X |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | PG-TDSON-8-6 (5x6 mm) | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same | PG-TDSON-8-6 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 40 V | 40 V | 40 V | 40 V | 40 V |
| RDS(on) typ @ VGS=10V | 2.6 mΩ | 1.9 mΩ | 5.0 mΩ | 1.6 mΩ | 4.0 mΩ |
| Technology | OptiMOS™ 5 trench | OptiMOS™ 5 trench | OptiMOS™ 5 trench | OptiMOS™ 5 trench | onsemi trench |
Bảo phân biệt quan trọng
- Lower RDS(on) than BSC050N04LSGATMA1 in same footprint (vsBSC050N04LSGATMA1)
- Higher RDS(on) but better switching-loss/FOM trade-off vs BSC019N04LSGATMA1 (vsBSC019N04LSGATMA1)
- Smaller footprint than cross-brand equivalents in DPAK/TO-252 (vsNTMFS0D4N04X)
- Integrated Schottky-like body diode (vsStandard planar MOSFETs)
Ghi chú thiết kế
Estimated: at full-load 23 A continuous and RDS(on) of 2.6 mΩ, conduction loss is approximately ID² × RDS(on) = 23² × 0.0026 = 1.37 W. The PG-TDSON-8-6 with 1 sq inch 1 oz copper pad has RθJA around 50 °C/W, giving a junction-temperature rise of ~69 °C above ambient. Ensure ambient temperature plus this rise stays below the 150 °C maximum junction rating; add a heatsink or expand copper pour if derating margin is tight.
Use the Kelvin-source pin (Pin 2) for the gate-driver return path to decouple the gate loop from the high-current source inductance. This suppresses gate-ring oscillations at high di/dt. Place input ceramic bypass capacitors (≥10 µF X7R) close to the drain pad, and route the high-current loop (drain-source-output inductor) as tight and short as possible to minimize parasitic inductance and EMI.
Do not drive the gate below the threshold voltage (typically 1-2 V) for high-current operation - this risks linear-mode operation and thermal runaway. Always ensure the driver can source/sink at least 2-4 A peak gate current to switch the OptiMOS™ 5 gate charge quickly. Verify the body-diode reverse-recovery (Qrr) and dead-time in synchronous-rectifier topologies to avoid cross-conduction losses.
The PG-TDSON-8-6 drain pad is the exposed thermal pad (Pin 8) and must be soldered directly to a copper pour on the top layer or inner layer via thermal vias. Use an array of 6-9 thermal vias (0.3 mm drill, 1 oz plating) under the pad to spread heat into inner copper planes. Avoid signal traces cutting through the drain-pad copper, as this reduces thermal conductivity and increases RDS(on) effective in operation.
Thông tin tuân thủ
RoHS compliant per Infineon product page; REACH compliant per EU SVHC declaration. Standard part is NOT AEC-Q100 qualified; for automotive applications, choose Infineon's automotive-graded variants in the IAUC family. Conflict-minerals compliant per Infineon CMRT declarations.
