BSC0501NSIATMA1 - 30V N-Ch OptiMOS 5 MOSFET 100A | Infineon
MPN: BSC0501NSIATMA1 ✓ فعالBSC0501NSIATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch used to efficiently route or modulate current in power-conversion circuits. It sits within the broader hierarchy of discrete semiconductors > transistors > MOSFETs > power MOSFETs, and serves as the synchronous switch in DC-DC converters, the low-side switch in motor drivers, and the load-disconnect element in battery protection. OptiMOS 5 specifically targets high-frequency synchronous buck conversion, where the lowest figure of merit (FOM = RDS(on) × Qg) directly translates into reduced switching losses and higher system efficiency.
Key differentiating specifications include an extremely low typical on-resistance that maximizes conduction efficiency at 30 V operation, an ultra-low gate charge that minimizes driver losses at high switching frequencies, and an optimized body diode that reduces reverse-recovery losses in synchronous-rectifier topologies. The PG-TDSON-8-6 package exposes the die to a low thermal-resistance pad, allowing 50 W dissipation when properly soldered to a 1 oz copper thermal land, which is essential for keeping the junction temperature within safe limits at full load.
The BSC0501NSIATMA1 uses Infineon's advanced trench-gate OptiMOS 5 process, which combines a refined cell pitch with a low-resistance source metallization to deliver industry-leading figure-of-merit performance. The device is characterized for avalanche operation, has an operating junction temperature range of -55°C to +150°C, and is qualified to JEDEC standards for plastic-package surface-mount reliability, making it suitable for demanding automotive and industrial environments.
Typical applications include synchronous-rectifier stages in point-of-load (POL) DC-DC converters for servers and telecom, low-side switches in 24 V industrial motor control, battery-management load switches in 12 V automotive subsystems, and USB Power Delivery (PD) buck-converter high-side FETs. The 30 V drain rating provides comfortable margin for 12 V input rails subject to load-dump transients up to ~35 V.
When designing with this MOSFET, prioritize minimizing parasitic source-inductance by using short, wide copper pours on the source pads, and ensure the gate driver can source/sink the peak gate current required at the intended switching frequency. Place a 100 nF ceramic bypass capacitor close to the gate to decouple the high di/dt loop and prevent unwanted ringing. Compared to a standard level-shift MOSFET, the OptiMOS 5 family dramatically reduces dead-time and reverse-conduction losses in half-bridge topologies.
کے لیے ڈراپ اِن متبادل BSC0501NSIATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں BSC0501NSIATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Configuration, Operating Temperature Range, Drain-Source Voltage (VDS).
BSC0502NSIATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC034N06NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0911NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0993NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC011N03LSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0501NSIATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon |
| Product Family | OptiMOS 5 25V/30V |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) at Ta | 29 A |
| Continuous Drain Current (ID) at Tc | 100 A |
| Power Dissipation at Ta (PD) | 2.5 W |
| Power Dissipation at Tc (PD) | 50 W |
| Gate-Source Voltage (VGS) | ±20 V |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +150C |
| پیکیج | PG-TDSON-8-6 (SuperSO8) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (per JEDEC J-STD-020) |
| RoHS اسٹیٹس | Compliant |
| Avalanche Rated | Yes |
| Technology | Trench-gate OptiMOS 5 |
BSC0501NSIATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input |
| پن 2 | Source — Source connection (low-side return) |
| پن 3 | Source — Source connection (low-side return) |
| پن 4 | Source — Source connection (low-side return) |
| پن 5 | Drain — Drain connection (high-voltage node) |
| پن 6 | Drain — Drain connection (high-voltage node) |
| پن 7 | Drain — Drain connection (high-voltage node) |
| پن 8 | Source — Source connection (low-side return) |
| پن PAD | Source / Thermal Pad — Exposed thermal pad - main Source terminal and heat dissipation path |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
BSC0501NSIATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: Synchronous Rectifier in 12V POL Buck Converters, USB Power Delivery (PD) Load Switch, 24V Industrial Motor Drive Low-Side Switch, Automotive 12V Battery Management Load Switch, LED Driver High-Side Switch, Server & Telecom DC-DC Converter Switch.
Synchronous Rectifier in 12V POL Buck Converters
The BSC0501NSIATMA1 is ideally suited as the low-side synchronous-rectifier MOSFET in point-of-load (POL) buck converters powered from a nominal 12 V input rail. The 30 V VDS rating provides comfortable margin above the 12 V nominal plus transient spikes seen in telecom and server power architectures, while the OptiMOS 5 figure-of-merit (RDS(on) × Qg) minimizes conduction and switching losses at the 300 kHz to 1 MHz switching frequencies common in modern POL designs. Placed on the low-side switch node, it complements a high-side control MOSFET and a dedicated gate-driver IC such as the XDPL8219XUMA1 to deliver >95% peak efficiency. The PG-TDSON-8-6 exposed thermal pad keeps junction temperature rise below 30°C at continuous 20 A loads when mounted on a 1 oz copper thermal land.
تجویز کردہ
USB Power Delivery (PD) Load Switch
The BSC0501NSIATMA1 functions as an excellent high-side load switch in USB Power Delivery (PD) and Type-C VBUS hot-swap circuits up to 5 A continuous current. Its 30 V VDS rating exceeds the 20 V maximum USB-PD VBUS voltage with substantial margin, and the 29 A continuous drain current provides a 5x safety factor over a typical 5 A PD contract. The low RDS(on) keeps voltage drop across the switch below 50 mV at full load, minimizing cable-voltage droop that would otherwise trigger PD under-voltage warnings. Paired with a hot-swap controller such as the ITS4090QEPDXUMA1 or ITS4130QEPDXUMA1, it forms a complete, protected Type-C VBUS switch with safe turn-on into capacitive loads and current-limit protection during fault conditions.
تجویز کردہ
24V Industrial Motor Drive Low-Side Switch
For 24 V industrial motor-control applications such as brushed-DC motors, solenoids, and relay drivers, the BSC0501NSIATMA1 serves as a robust low-side switch in H-bridge or half-bridge topologies. The 30 V VDS rating tolerates typical 24 V bus transients including inductive kickback when properly clamped with a flyback diode, while the 100 A pulsed drain current capability easily handles motor inrush at startup. Paired with a gate driver such as the 2ED2108S06FXUMA1 or IRS2302STRPBF, the part can be PWM-modulated up to 50 kHz for variable-speed motor control. The PG-TDSON-8-6 package's exposed thermal pad is essential for dissipating the I²R losses at heavy motor load, and the rugged OptiMOS 5 avalanche rating provides protection against unclamped inductive switching events.
تجویز کردہ
Automotive 12V Battery Management Load Switch
In 12 V automotive battery-management subsystems such as load switches, body-control modules, and LED-driver high-side paths, the BSC0501NSIATMA1 delivers reliable switching with the ruggedness demanded by the automotive environment. While not AEC-Q100 qualified itself, it is suitable for non-safety-critical 12 V body-electronics loads where the 30 V VDS rating tolerates load-dump transients up to ~35 V when paired with a TVS clamp such as the SMBJ5.0A. The low RDS(on) minimizes voltage drop and heat generation across the switch, critical for tight engine-bay thermal envelopes. For AEC-Q100-critical paths, the Infineon BSC030N03MSGATMA1 or IAUC60N06S5L073ATMA1 automotive-grade parts should be used as drop-in equivalents.
تجویز کردہ
LED Driver High-Side Switch
The BSC0501NSIATMA1 serves as an efficient high-side switch in constant-current LED drivers for architectural lighting, automotive exterior lighting, and high-brightness illumination. Its low RDS(on) minimizes power dissipation when controlling multi-amp LED strings, while the 30 V VDS rating easily handles 24 V LED-driver input rails. In a buck-mode LED-driver topology, the MOSFET switches at 100 kHz to 1 MHz to modulate LED current; the OptiMOS 5 low gate charge reduces driver-stage losses and enables the use of compact gate-driver ICs such as the XDPL8219XUMA1 or BTS700201ESPXUMA2. The PG-TDSON-8-6 package provides the thermal headroom needed to sustain continuous LED current without heatsinking in compact luminaire designs.
تجویز کردہ
Server & Telecom DC-DC Converter Switch
In 48 V-input intermediate-bus converters (IBCs) and 12 V-input point-of-load (POL) converters that power CPUs, ASICs, and FPGAs in server and telecom infrastructure, the BSC0501NSIATMA1 provides the synchronous-rectifier switching performance required for >95% peak efficiency. The OptiMOS 5 figure-of-merit minimizes both conduction losses (low RDS(on)) and switching losses (low Qg and Qgd), which is critical at the 500 kHz to 1 MHz switching frequencies used in modern CPU VRs. The PG-TDSON-8-6 package's low thermal resistance allows 50 W power dissipation on a properly designed PCB thermal land, supporting sustained high-current operation. Paired with a digital VR controller and the 2EDL8023GXUMA1 or 2EDL8123GXUMA1 half-bridge gate driver, it forms a high-density POL stage.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا BSC0501NSIATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | BSC0502NSIATMA1 | BSC034N06NSATMA1 | BSC0911NDATMA1 | BSC0993NDATMA1 | BSC011N03LSATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) | PG-TDSON-8-6 (SuperSO8) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (VDS) | 30 V | 30 V | 60 V | 25 V | 30 V | 30 V |
| Power Dissipation at Ta (PD) | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W | 2.5 W |
| Power Dissipation at Tc (PD) | 50 W | 50 W | 50 W | 50 W | 50 W | 50 W |
| Family / Technology | OptiMOS 5 30V | OptiMOS 5 30V | OptiMOS 5 60V | OptiMOS 5 25V | OptiMOS 5 30V | OptiMOS 5 30V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
اہم امتیازی خصوصیات
- Lowest on-resistance in 30V OptiMOS 5 PG-TDSON-8-6 family (بمقابلہBSC0502NSIATMA1)
- 30V rating with same PG-TDSON-8-6 footprint as 60V family (بمقابلہBSC034N06NSATMA1)
- Best-in-class figure of merit (RDS(on) × Qg) (بمقابلہBSC0911NDATMA1)
ڈیزائن نوٹس
Estimated: at continuous 20 A load with RDS(on) of ~5 mΩ at TA=25°C, conduction loss is ~2 W. With PG-TDSON-8-6 theta_JA of approximately 50°C/W on a 1 oz copper thermal land (1 in²), junction temperature rise is ~100°C above ambient. Derate current by 50% at TA=85°C, or use a 2 oz copper thermal land to halve the junction rise. Always refer to the Infineon OptiMOS 5 family thermal-resistance curves for board-specific de-rating.
The PG-TDSON-8-6 package exposes a Source-connected thermal pad that doubles as the primary current return. Use a top-layer copper pour covering at least 1 in² connected to Source, with multiple stitched thermal vias (≥9 vias, 0.3 mm drill) to the inner ground plane. Keep the gate-drive loop (gate-driver output → gate → source-return → driver ground) area minimized to under 0.5 cm² to limit parasitic inductance that causes gate-ringing at the MOSFET's Miller plateau.
Place a 100 nF X7R ceramic bypass capacitor within 5 mm of the gate pin to decouple the high di/dt gate-drive loop and prevent false triggering from drain-to-gate Miller coupling. For synchronous-rectifier stages, place a Schottky diode (e.g., 30 V rated) in parallel with the body diode if the application requires hard switching above the SOA curve, although the OptiMOS 5 avalanche rating generally eliminates this need for VDS ≤ 24 V applications.
Do not exceed ±20 V VGS - the gate oxide will permanently rupture above ±25 V, especially during transient ringing from the gate-driver inductance. Always use a gate-source pull-down resistor (10 kΩ typical) when the driver is in a high-impedance state to keep the MOSFET safely off during controller start-up. Also note that VGS(th) for OptiMOS 5 parts typically ranges 1-2 V, so 3.3 V microcontroller GPIO cannot directly drive the gate to full enhancement - always use a dedicated gate-driver IC for proper switching performance.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Lead-free and halogen-free per OptiMOS 5 family datasheet. JEDEC plastic-package surface-mount reliability qualified (MSL 1). Not AEC-Q100 qualified - use BSC030N03MSGATMA1 or IAUC60N06S5L073ATMA1 for automotive safety-critical paths.
