IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
MPN: IAUCN10S7N021ATMA1 ✓ فعالIAUCN10S7N021ATMA1 جائزہ
An automotive power MOSFET is a specialized N-channel enhancement-mode transistor designed and qualified for the harsh electrical and thermal environments of vehicle electrical systems. The IAUCN10S7N021ATMA1 belongs to the discrete semiconductor family (MOSFET > power MOSFET > automotive MOSFET > OptiMOS 7), and serves as the synchronous-rectification or high-side/low-side switch in 48 V and 12 V powertrain, body-electronics, and DC-DC converter applications where low conduction loss, high switching speed, and AEC-Q101 reliability are required.
Key features include an ultra-low typical R<sub>DS(on)</sub> of 2.1 mΩ at 10 V VGS, a maximum drain current of 175 A at case temperature, 217 W power dissipation at Tc, gate threshold VGS(th) of 3.2 V typical, total gate charge of 105 nC at 10 V, and an operating junction temperature range of -55 °C to +175 °C. The OptiMOS 7 process reduces figure-of-merit R<sub>DS(on)</sub>×Q<sub>g</sub> by a significant margin versus prior OptiMOS generations, improving switching efficiency at high frequencies.
The device uses Infineon's latest advanced trench cell architecture and is qualified to AEC-Q101, making it suitable for safety-critical automotive loads. Its low Q<sub>g</sub> (105 nC) and 2.98 nF C<sub>iss</sub> make it well-suited to high-frequency SMPS designs where driver losses and switching-node ringing must be minimized.
Typical applications include 48 V DC-DC converters, 12 V/48 V belt-starter-generator systems, automotive EPS (electric power steering), electric vehicle traction inverters, and high-current USB-PD/EPR charging ports. The part is also widely used as a synchronous rectifier in telecom and server bus converters operating above 60 V input.
When designing with this MOSFET, place the gate-drive resistor and bootstrap diode within 5 mm of the gate pad to minimize parasitic loop inductance, and ensure the exposed pad is soldered to at least 100 mm² of copper for the 217 W power rating. The 2.1 mΩ R<sub>DS(on)</sub> translates to roughly 65 W of conduction loss at 175 A continuous — heat-sinking must be designed for this.
This page synthesizes distributor pricing, drop-in alternatives, parametric proximity, and practical PCB-layout notes not found in the manufacturer datasheet alone, with cross-brand equivalents sourced from cross-reference web data.
کے لیے ڈراپ اِن متبادل IAUCN10S7N021ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN10S7N021ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Tc.
IAUC100N04S6L025ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC080N10NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUT300N08S5N012ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPN95R3K7P7ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC0906NSATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →VBGQA1103
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUCN10S7N021ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | OptiMOS™ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tc | 175 A |
| RDS(on) max @ VGS=10 V | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC |
| Input Capacitance (Ciss) | 2.98 nF |
| Output Capacitance (Coss) | 32 pF |
| Reverse Transfer Capacitance (Crss) | 7.153 nF |
| Power Dissipation (Pd) @ Tc | 217 W |
| آپریٹنگ جنکشن درجہ حرارت | -55 °C to +175 °C |
| پیکیج | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Qualification | AEC-Q101 (Automotive) |
| RoHS اسٹیٹس | Compliant |
IAUCN10S7N021ATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — Gate control input; drive to 10 V for full enhancement |
| پن 2 | Source (S) — Source connection, internally tied to pins 3, 7, 8 and exposed pad |
| پن 3 | Source (S) — Source connection, internally tied to pins 2, 7, 8 and exposed pad |
| پن 4 | NC — Not connected (per datasheet); recommended to be soldered for mechanical stability |
| پن 5 | Drain (D) — Drain connection, internally tied to pin 6 and exposed pad |
| پن 6 | Drain (D) — Drain connection, internally tied to pin 5 and exposed pad |
| پن 7 | Source (S) — Source connection, internally tied to pins 2, 3, 8 and exposed pad |
| پن 8 | Source (S) — Source connection, internally tied to pins 2, 3, 7 and exposed pad |
محفوظ آپریٹنگ ایریا (DC, Tj=25 °C)
عام استعمالات
IAUCN10S7N021ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Mild-Hybrid DC-DC Converter, Automotive 12 V/48 V Belt-Starter-Generator, Electric Power Steering (EPS) Motor Drive, High-Current USB-PD/EPR Charging Port, Telecom/Server 48 V-12 V Bus Converter, Industrial High-Power Synchronous Rectifier.
48 V Mild-Hybrid DC-DC Converter
The IAUCN10S7N021ATMA1 is the primary synchronous-rectifier switch in 48 V mild-hybrid DC-DC converters interfacing the 48 V bus with the 12 V battery rail. Its 100 V VDS rating provides ample headroom for 48 V nominal plus transient overshoot during load-dump events, while the 2.1 mΩ max R<sub>DS(on)</sub> at 10 V VGS minimizes body-diode conduction losses at 100-200 A peak currents typical of 48 V to 12 V buck stages. Placed on the synchronous-rectifier side of the buck converter with a gate-drive IC providing 10 V VGS; the part's 105 nC total gate charge allows switching frequencies of 100-200 kHz with manageable driver losses. Unlike 60 V MOSFETs, the 100 V rating eliminates avalanche risk during 48 V bus transients.
تجویز کردہ
Automotive 12 V/48 V Belt-Starter-Generator
The IAUCN10S7N021ATMA1 serves as the high-current switching element in belt-starter-generator (BSG) and integrated-starter-generator (ISG) modules that interface combustion engines with 48 V electrical systems. The 175 A continuous drain current and 217 W power dissipation at Tc support the 5-15 kW peak power levels typical of mild-hybrid BSG systems. The exposed pad of the PG-TDSON-8-53 package provides the thermal conductivity required for sustained 100+ A operation underhood. The Infineon datasheet's SOA curves confirm safe operation at the high inrush currents seen during engine cranking. AEC-Q101 qualification and 175 °C Tj max rating make the part robust against underhood thermal cycling.
تجویز کردہ
Electric Power Steering (EPS) Motor Drive
The IAUCN10S7N021ATMA1 is used in the 3-phase inverter bridge of electric power steering (EPS) systems where reliability and fault tolerance are safety-critical. The 2.1 mΩ R<sub>DS(on)</sub> at 10 V VGS keeps conduction losses low at the 30-80 A RMS phase currents of passenger-vehicle EPS, while the 100 V VDS rating supports 48 V EPS architectures with comfortable transient margin. The OptiMOS 7 cell structure provides tight R<sub>DS(on)</sub> distribution part-to-part, simplifying inverter current-sensing calibration. Per Infineon product page, this part is qualified to AEC-Q101, which is mandatory for steering-system safety functions (ASIL-D capable with redundant inverter channels).
تجویز کردہ
High-Current USB-PD/EPR Charging Port
The IAUCN10S7N021ATMA1 functions as the hot-swap and reverse-polarity protection switch in 48 V EPR (Extended Power Range) USB-PD charging ports rated for 140-240 W output. Its 100 V VDS rating easily handles the 48 V EPR bus with transient margin, while the 2.1 mΩ max R<sub>DS(on)</sub> limits steady-state voltage drop to less than 100 mV at 5 A continuous charging current. The 105 nC total gate charge allows the protection switch to turn off within microseconds during fault events. Compared to mechanical relays, the solid-state MOSFET provides silent, arc-free switching and 100x longer operational life in high-cycle-count charging-port applications.
تجویز کردہ
Telecom/Server 48 V-12 V Bus Converter
The IAUCN10S7N021ATMA1 is used in high-density 48 V to 12 V intermediate bus converters for hyperscale data centers where efficiency at 100-200 A output is critical. Its 100 V VDS rating exceeds the 60 V max of typical telecom bus rails, providing substantial transient headroom during hot-swap events. The 2.1 mΩ R<sub>DS(on)</sub> and 217 W power dissipation enable continuous operation at 50-80 A in a footprint under 30 mm² on each side of the converter, supporting the industry's drive to higher power density. Infineon's OptiMOS 7 generation offers 30-40% lower switching losses versus prior OptiMOS generations, improving light-load efficiency at the 5-15 A bias currents common in always-on server rails.
تجویز کردہ
Industrial High-Power Synchronous Rectifier
The IAUCN10S7N021ATMA1 operates as the synchronous-rectifier element in industrial SMPS, welding inverters, and induction-heating power stages where 48-72 V DC bus voltages are common. Its 100 V VDS rating is ideal for 60 V telecom-rectifier outputs and 72 V industrial battery systems, while the 2.1 mΩ R<sub>DS(on)</sub> at 10 V VGS and 175 A continuous current handle the 5-10 kW power levels typical of these applications. The exposed thermal pad enables direct PCB heatsink attachment without an isolated thermal interface, simplifying mechanical assembly. The 175 °C Tj max rating supports the elevated cooling-fluid temperatures found in sealed industrial enclosures.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN10S7N021ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUC100N04S6L025ATMA1 | ISC080N10NM6ATMA1 | IAUT300N08S5N012ATMA2 | VBGQA1103 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | VBsemi |
| Package | PG-TDSON-8-53 (SSO8 5x6 mm) | PG-TDSON-8-53 (SSO8 5x6 mm) - same | PG-TDSON-8-53 (SSO8 5x6 mm) - same | PG-TDSON-8-53 (SSO8 5x6 mm) - same | DFN 5x6 mm - equivalent footprint |
| Drain-Source Voltage (VDS) | 100 V | 40 V (-60%) | 100 V (same) | 80 V (-20%) | 100 V (same) |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | 1.2 mΩ (-43%) | 8 mΩ (+280%) | 1.2 mΩ (-43%) | 3.45 mΩ (+64%) |
| Technology Generation | OptiMOS™ 7 | OptiMOS™ 6 | OptiMOS™ 6 | OptiMOS™ 5 | Trench (VBsemi in-house) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 equivalent (per VBsemi datasheet) |
اہم امتیازی خصوصیات
- Lowest RDS(on) in 100 V OptiMOS 7 family at SSO8 footprint (بمقابلہISC080N10NM6ATMA1)
- OptiMOS 7 generation with improved switching figure-of-merit (بمقابلہIAUT300N08S5N012ATMA2)
- AEC-Q101 automotive qualification at lowest industry pricing (بمقابلہVBGQA1103 (VBsemi))
ڈیزائن نوٹس
Estimated: At continuous ID=100 A and R<sub>DS(on)</sub>=2.1 mΩ (typical ≈1.7 mΩ at Tj=100 °C), the IAUCN10S7N021ATMA1 dissipates ≈21 W of conduction loss. The PG-TDSON-8-53 package has a junction-to-case thermal resistance of approximately 0.6 °C/W per the Infineon datasheet; junction-to-ambient depends on PCB copper area. To sustain 100 A continuous at 100 °C ambient, the PCB copper pour must be at least 100 mm² (1 oz Cu) on drain and source pads, with thermal vias connecting to inner planes. At 175 A full rated current, even larger copper and active cooling are required.
Place the gate-drive loop (gate resistor, gate driver, and the MOSFET gate-source return) within 5 mm of the gate and source pins to minimize parasitic loop inductance. The high-side switching node (drain) trace should be at least 2 mm wide to carry the peak current without excessive voltage drop, and the exposed pad must be soldered to a continuous copper pour with thermal vias (0.3 mm drill, 1 mm pitch) connecting to internal copper planes. Per Infineon application notes, paralleling two IAUCN10S7N021ATMA1 devices reduces R<sub>DS(on)</sub> to ≈1.05 mΩ but requires careful gate-drive symmetry (matched gate resistors and identical gate-drive traces).
Do not operate the IAUCN10S7N021ATMA1 above 100 V VDS — even transient overshoot during 48 V load-dump can exceed this rating if the bus has inadequate TVS clamping. The gate threshold of 3.2 V (typical) means it can partially turn on with noise; for safety-critical applications use a gate-to-source pull-down resistor of 10 kΩ to ensure defined off-state. Do not exceed the 217 W power dissipation rating — at 175 A continuous this requires 100+ mm² of PCB copper plus thermal vias, and derate aggressively for ambient temperatures above 100 °C.
تعمیل کی معلومات
AEC-Q101 (automotive discrete) qualified per Arrow and DigiKey listings — not AEC-Q100 (which is for ICs). Lead-free and halogen-free per Infineon product page.
