IAUCN10S7N074ATMA1 - 100V 7.4mΩ N-Channel OptiMOS 7 MOSFET | Infineon
MPN: IAUCN10S7N074ATMA1 ✓ فعالIAUCN10S7N074ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route and regulate current in power conversion. The N-channel variant requires a positive gate drive relative to source to turn on. Within the broader taxonomy, MOSFETs belong to discrete semiconductors > transistors > FETs > power MOSFETs. OptiMOS™ 7 is Infineon's latest-generation 100 V platform that combines a shielded-gate trench (SGT) cell structure with an optimized epitaxial layer to simultaneously reduce R<sub>DS(on)</sub>, gate charge (Qg), and output capacitance (Coss), enabling higher switching frequency and lower conduction losses.
Key features of the IAUCN10S7N074ATMA1 include a maximum drain-source voltage V<sub>DS</sub> of 100 V, continuous drain current I<sub>D</sub> of 78 A at T<sub>C</sub>, pulsed drain current support up to , gate-source voltage V<sub>GS</sub> rating of ±20 V, and typical R<sub>DS(on)</sub> of 7.4 mΩ at V<sub>GS</sub>=10 V. The SGT cell technology yields a figure-of-merit (FOM = R<sub>DS(on)</sub> × Qg) that is materially better than the previous OptiMOS™ 5 generation, supporting higher switching frequencies and reduced driver losses in 48 V automotive applications.
The PG-TDSON-8-34 package provides an exposed thermal pad that ties directly to the drain tab, giving low thermal resistance θ<sub>JA</sub> and supporting a maximum power dissipation P<sub>D</sub> of 96 W at T<sub>C</sub>=25 °C. The package is lead-free, RoHS compliant, and rated for MSL2 (1-year floor life). This combination of low R<sub>DS(on)</sub>, low Qg, and a thermally enhanced package makes the part well suited to automotive DC-DC converters, BLDC motor drives, battery protection, and high-current switching in 48 V systems.
Typical applications include 48 V mild-hybrid DC-DC converters, eMotor inverter stages, high-side load switches, battery management system (BMS) disconnect switches, and Class-D audio amplifier outputs. Designers frequently pair it with Infineon EiceDRIVER™ gate drivers such as 1EDN7116G or 2EDN7534R for fast, controlled turn-on/off in switching power topologies.
A critical design consideration is gate-drive voltage. While the part is specified at V<sub>GS</sub>=10 V for the headline R<sub>DS(on)</sub>, it can be driven from a 12 V regulated rail. Designers must observe the ±20 V V<sub>GS</sub> absolute maximum and ensure the gate-source path never exceeds this rating during transient events. PCB layout should use a wide copper pour on the drain pad and minimize source-inductance loop area to control switching losses and ringing.
This page synthesizes distributor pricing, parametrically similar drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
کے لیے ڈراپ اِن متبادل IAUCN10S7N074ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUCN10S7N074ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Mounting Type, Automotive Qualification, Drain-Source Voltage (VDS).
IAUCN08S7L033ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N037GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7N027GATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC120N06S5L015ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUCN04S7L050HATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →VBGQA1107MC100
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IAUCN10S7N074ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| FET Type | N-Channel |
| Technology | OptiMOS™ 7 (Shielded-Gate Trench) |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>) | 78 A (Tj) |
| Power Dissipation (P<sub>D</sub>) | 96 W (Tc) |
| R<sub>DS(on)</sub> (typ at V<sub>GS</sub>=10 V) | 7.4 mΩ |
| Gate-Source Voltage (V<sub>GS</sub>) | ±20 V |
| آپریٹنگ درجہ حرارت رینج | -55 °C to +175 °C |
| پیکیج | PG-TDSON-8-34 (TDSON EP, 5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| پن کی تعداد | 8 (with exposed pad) |
| MSL لیول | MSL2 (1 year) |
| Automotive Qualification | AEC-Q101 |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| Application | 48 V Automotive Systems |
IAUCN10S7N074ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (multiple pins tied together for low R<sub>DS(on)</sub>) |
| پن 2 | Source — Source connection |
| پن 3 | Source — Source connection |
| پن 4 | Gate — Gate drive input |
| پن 5 | Source — Source connection |
| پن 6 | Source — Source connection |
| پن 7 | Source — Source connection |
| پن 8 | Source — Source connection |
| پن PAD | Drain — Drain terminal (also serves as thermal pad) |
محفوظ آپریٹنگ ایریا (DC, T<sub>C</sub>=25 °C)
عام استعمالات
IAUCN10S7N074ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 48 V Mild-Hybrid DC-DC Converter, eMotor Inverter (Mild-Hybrid), High-Side Battery Management Load Switch, Class-D Audio Amplifier Output Stage, Industrial 48 V–60 V DC-DC Synchronous Rectifier, Automotive LED Headlight Driver Switch.
48 V Mild-Hybrid DC-DC Converter
The IAUCN10S7N074ATMA1 is purpose-built for 48 V automotive DC-DC converters that step down from the 48 V mild-hybrid bus to 12 V subsystems or step up from 12 V to 48 V. With 100 V V<sub>DS</sub> headroom above the 48 V bus and 7.4 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, the part achieves synchronous-rectifier conduction losses of roughly I²R = 50² × 0.0074 = 18.5 W at 50 A, keeping efficiency above 96% at full load. The OptiMOS™ 7 shielded-gate trench (SGT) cell structure reduces gate charge Qg and output capacitance Coss, enabling 100–250 kHz switching frequencies with manageable driver loss. AEC-Q101 qualification allows direct deployment in production 48 V powertrains. Place as the low-side synchronous rectifier with a 1EDN7116G or 2EDN7534R gate driver for fast, controlled turn-on/off. Source: Infineon product page.
تجویز کردہ
eMotor Inverter (Mild-Hybrid)
The IAUCN10S7N074ATMA1 suits eMotor inverter stages in 48 V mild-hybrid electric vehicles where 100 V V<sub>DS</sub> headroom and 78 A continuous drain current are required. As a low-side switch in a three-phase inverter bridge, the part's 7.4 mΩ R<sub>DS(on)</sub> minimizes conduction loss during PWM switching cycles, and its PG-TDSON-8-34 package with exposed pad provides low θ<sub>JC</sub> for direct PCB heatsinking. The OptiMOS™ 7 SGT cell structure provides fast switching at 20 kHz PWM, reducing switching loss and audible noise. AEC-Q101 qualification ensures reliability under automotive thermal cycling. Pair with an IRSM808-105MH or TLE9180D32QKXUMA1 gate driver + controller for a complete three-phase inverter stage.
تجویز کردہ
High-Side Battery Management Load Switch
The IAUCN10S7N074ATMA1 operates as a high-side load switch or battery disconnect in 48 V BMS (Battery Management System) modules where low R<sub>DS(on)</sub> directly translates to lower voltage drop and heat dissipation across the disconnect path. At 78 A continuous and 100 V V<sub>DS</sub>, the part safely interrupts 48 V battery strings with controlled avalanche capability. The 7.4 mΩ on-state resistance results in 5.6 W dissipation at 80 A — well within the 96 W P<sub>D</sub> rating when properly heatsinked. AEC-Q101 qualification satisfies automotive reliability requirements for battery-pack deployment. Tie the gate through a pull-down resistor to ensure fail-safe off-state, and drive V<sub>GS</sub> from an isolated gate-drive transformer or bootstrap supply.
تجویز کردہ
Class-D Audio Amplifier Output Stage
The IAUCN10S7N074ATMA1 fits as the output half-bridge switch in 48 V automotive Class-D audio amplifiers where 100 V V<sub>DS</sub> and low R<sub>DS(on)</sub> directly improve amplifier efficiency and thermal headroom. At a 48 V bus, the part's 7.4 mΩ on-state resistance produces only ~2 W dissipation per channel at 20 A peak audio current — a substantial improvement over legacy 60 V MOSFETs with 15–20 mΩ. The OptiMOS™ 7 generation's lower gate charge reduces switching loss at 250–500 kHz PWM carrier frequencies, which is critical for automotive amplifier efficiency. AEC-Q101 qualification supports direct deployment in vehicle head-unit and premium audio amplifier modules. Place as the high-side and low-side switch in a half-bridge, with dead-time control managed by the audio processor.
تجویز کردہ
Industrial 48 V–60 V DC-DC Synchronous Rectifier
The IAUCN10S7N074ATMA1 serves as a synchronous rectifier on the secondary side of industrial 48 V to 60 V buck or buck-derived isolated DC-DC converters used in telecom, robotics, and automation. With 100 V V<sub>DS</sub> headroom and 7.4 mΩ R<sub>DS(on)</sub>, the part provides efficient rectification at high duty cycles while tolerating ringing transients on the secondary winding. The 78 A continuous drain current supports multi-kilowatt converters. OptiMOS™ 7's low Coss reduces dead-time loss during PWM transitions. While not AEC-Q101 required for industrial deployment, the part benefits from Infineon's automotive-grade reliability. Use with a TL594-class PWM controller and an isolated gate-driver such as 2EDL8033G4CXTMA1.
تجویز کردہ
Automotive LED Headlight Driver Switch
The IAUCN10S7N074ATMA1 functions as the PWM switch in automotive LED headlight driver stages where it controls current through high-brightness LED strings fed from a 48 V bus. With 100 V V<sub>DS</sub> rating and 7.4 mΩ R<sub>DS(on)</sub>, the MOSFET handles PWM dimming at 200–1000 Hz while dissipating minimal heat from conduction loss. The exposed-pad TDSON-8-34 package allows direct PCB heatsinking for headlamp electronics operating underhood at elevated ambient temperature. AEC-Q101 qualification supports deployment in production LED headlamp modules. Use with a TLD23313EPXUMA1 LED driver IC for closed-loop current regulation and dimming control.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUCN10S7N074ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUCN08S7L033ATMA1 | IAUC120N06S5L015ATMA1 | IAUCN04S7N037GATMA1 | IAUCN04S7N027GATMA1 | VBGQA1107MC100 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | PG-TDSON-8-34 (TDSON EP) - same | DFN8 (5x6) - footprint compatible |
| V<sub>DS</sub> (V) | 100 V | 80 V | 120 V | 40 V | 40 V | 100 V |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V (typ) | 7.4 mΩ | 3.3 mΩ | 1.5 mΩ | 3.7 mΩ | 2.7 mΩ | 7.4 mΩ |
| Technology | OptiMOS™ 7 (SGT) | OptiMOS™ 7 (SGT) | OptiMOS™ 5 (SGT) | OptiMOS™ 7 (SGT) | OptiMOS™ 7 (SGT) | SGT |
| AEC-Q101 | Yes | Yes | Yes | Yes | Yes | Targeted |
اہم امتیازی خصوصیات
- Higher V<sub>DS</sub> headroom than 80 V OptiMOS™ 7 family (بمقابلہIAUCN08S7L033ATMA1)
- OptiMOS™ 7 generation (lower Qg and FOM than OptiMOS™ 5) (بمقابلہIAUC120N06S5L015ATMA1)
- Direct drop-in 7.4 mΩ alternative from VBsemi (بمقابلہVBGQA1107MC100)
ڈیزائن نوٹس
Estimated: at 78 A continuous drain and 7.4 mΩ R<sub>DS(on)</sub>, conduction loss is approximately I²R = 78² × 0.0074 = 45 W. The PG-TDSON-8-34 package's exposed drain pad must be soldered to a copper pour of at least 1 square inch on the top layer to maintain junction temperature within the 175 °C limit. Use thermal vias under the exposed pad to spread heat to inner copper planes. In forced-air environments, derate continuous current to 60–70 A at 85 °C ambient.
Minimize the source-inductance loop area by placing the gate-driver IC directly adjacent to the gate pin (pin 4) with a short, wide gate trace (≥20 mil). Add a 10 Ω–22 Ω gate resistor close to the driver to damp ringing, and a small Schottky diode (e.g., BAT54S) gate-to-source for fast turn-off. The exposed drain pad should use an array of thermal vias (0.3 mm pitch, 12+ vias) for heat transfer to inner planes. Avoid routing sensitive analog signals across the drain tab, which is a switching node.
The absolute maximum V<sub>GS</sub> is ±20 V; driving the gate from a 12 V supply is safe, but transient spikes above 20 V during fast turn-off can puncture the gate oxide. Add a 15 V Zener diode (e.g., BZX84C15L) gate-to-source for transient clamping. Also: never operate the part without a gate-source resistor (≥10 kΩ) in case the driver is tri-stated — otherwise the gate can float and partially turn on, causing shoot-through in half-bridge configurations.
تعمیل کی معلومات
AEC-Q101 qualified for automotive. RoHS compliant per DigiKey and Mouser listings. Halogen-free per Infineon product family standard.
