IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IAUZ20N08S5L300ATMA1 ✓ فعالIAUZ20N08S5L300ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used to efficiently route or regulate current in power electronics. It belongs to the broader hierarchy of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and is the workhorse of modern switch-mode power supplies (SMPS), motor drives, and load switches. OptiMOS-5 is Infineon's fifth-generation trench MOSFET platform, delivering lower Rds(on) per unit silicon area, faster switching, and lower figure-of-merit (FOM = Rds(on) x Qg) than prior generations.
Key features include an 80 V drain-source breakdown voltage suitable for 12 V and 24 V automotive buses (including 48 V mild-hybrid transients up to 80 V), a 175°C maximum operating junction temperature, and AEC-Q101 qualification for automotive use. The combination of low Rds(on) (30 mΩ) and small S3O8 footprint (3.3 x 3.3 mm) enables high power density designs. Compared to standard MOSFETs, OptiMOS-5 reduces switching losses by roughly 30-50%, which directly translates to higher efficiency and lower thermals in the same board area.
Typical applications include LED lighting drivers, automotive powertrain ECUs, body-electronics modules, battery protection circuits in 12 V/24 V systems, and high-side/low-side buck or half-bridge converters. The combination of low charge and small package is particularly attractive in DC-DC converters where switching losses dominate efficiency at high frequencies.
When designing with this part, keep the gate-drive voltage at 10 V to fully enhance the channel and achieve the rated 30 mΩ Rds(on). At lower gate voltages (e.g., 4.5 V), Rds(on) increases significantly and can cause thermal runaway. Always observe the 175°C junction temperature limit and provide adequate copper cooling.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet, with all values cross-referenced against distributor listings and the Infineon part page.
کے لیے ڈراپ اِن متبادل IAUZ20N08S5L300ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IAUZ20N08S5L300ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Junction Temperature, MSL Level, RoHS Status.
IAUZ40N08S5N100ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC28N08S5L230ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC64N08S5L075ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC052N08NS5ATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC123N08NS3GATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUZ20N08S5L300ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | OptiMOS-5 |
| Polarity | N-Channel |
| Drain-Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Id) | 20 A (Tc) |
| Power Dissipation (Pd) | 30 W (Tc) |
| On-State Resistance (Rds(on)) | 30 mΩ @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | ±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | 599 pF @ 40 V |
| Total Gate Charge (Qg) | 10.5 nC @ 10 V |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| پیکیج | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| ماؤنٹنگ ٹائپ | Surface Mount |
| Qualification | AEC-Q101 (automotive) |
| Technology | Trench MOSFET (OptiMOS-5) |
| RoHS اسٹیٹس | Compliant |
IAUZ20N08S5L300ATMA1 پن کنفیگریشن
| پن 1 | Source — Source connection (internally tied to pins 1-7 and exposed pad region) |
| پن 2 | Source — Source connection |
| پن 3 | Source — Source connection |
| پن 4 | Source — Source connection |
| پن 5 | Source — Source connection |
| پن 6 | Source — Source connection |
| پن 7 | Source — Source connection |
| پن 8 | Gate — Gate drive input (Vgs ±20 V max) |
محفوظ آپریٹنگ ایریا (DC, Tc=25°C)
عام استعمالات
IAUZ20N08S5L300ATMA1 کے لیے موزوں ہے 7 ایپلیکیشنs: Automotive LED Lighting Drivers, 48V Mild-Hybrid DC-DC Converters, Battery Management & Protection, Body Electronics & Load Switches, Industrial 24V Solenoid & Relay Drivers, USB-PD & High-Current Type-C Power Paths, E-Bike & Light Electric Vehicle Power Stages.
Automotive LED Lighting Drivers
The IAUZ20N08S5L300ATMA1 fits automotive LED headlight and DRL driver stages because its 80 V Vds rating tolerates 24 V bus transients including load-dump events up to 35 V. The 30 mΩ Rds(on) at 10 V Vgs keeps conduction losses below 1.5 W at typical LED-string currents of 5-7 A, while the AEC-Q101 qualification ensures reliability across -40°C to +175°C automotive temperature ranges. The 3.3 x 3.3 mm S3O8 footprint enables compact driver layouts behind headlamp enclosures, and the 10.5 nC Qg supports PWM dimming frequencies above 1 kHz without significant switching losses.
تجویز کردہ
48V Mild-Hybrid DC-DC Converters
For 48 V mild-hybrid buck and boost converters, the IAUZ20N08S5L300ATMA1 provides the headroom needed for transient voltages up to 80 V while maintaining a low 30 mΩ Rds(on). Its 10.5 nC Qg enables efficient switching at 200-500 kHz, allowing smaller magnetics in 48 V-to-12 V DC-DC stages. The PG-TSDSON-8-32 exposed-drain pad provides effective thermal dissipation for 30 W continuous operation, and the AEC-Q101 qualification meets automotive reliability requirements for powertrain modules mounted near the engine bay.
تجویز کردہ
Battery Management & Protection
In 12 V and 24 V battery management systems, the IAUZ20N08S5L300ATMA1 serves as a high-side disconnect switch or load-dump protection element. The 80 V Vds rating handles jump-start and load-dump transients, while 20 A continuous drain current supports most automotive load channels. The 30 mΩ Rds(on) limits steady-state voltage drop to under 60 mV at 2 A, preserving battery capacity. Its OptiMOS-5 trench technology provides fast turn-off in fault conditions, critical for short-circuit protection in BMS architectures.
تجویز کردہ
Body Electronics & Load Switches
The IAUZ20N08S5L300ATMA1 is well suited for body-electronics load switches controlling motors, solenoids, and resistive loads in door modules, seat controllers, and HVAC actuators. Its 80 V rating tolerates inductive flyback transients when switching solenoids or relays, eliminating the need for separate TVS clamp protection in many cases. The 20 A continuous current handles most body-electronics loads directly, and the 30 mΩ Rds(on) reduces I²R losses that would otherwise generate heat in confined modules. AEC-Q101 qualification ensures long-term reliability in underhood and cabin environments.
تجویز کردہ
Industrial 24V Solenoid & Relay Drivers
Industrial 24 V solenoid and relay driver circuits benefit from the IAUZ20N08S5L300ATMA1's 80 V Vds margin, which absorbs inductive kickback without requiring external snubbers. The 20 A continuous drain current supports large solenoids used in hydraulics and process control, while the 30 mΩ Rds(on) keeps dissipation manageable even at sustained high currents. Although not automotive-qualified industrial applications use the same Infineon OptiMOS-5 technology, providing proven reliability. The PG-TSDSON-8-32 package is compatible with reflow soldering and high-density PCB layouts common in industrial controllers.
تجویز کردہ
USB-PD & High-Current Type-C Power Paths
In USB Power Delivery and high-current Type-C power-path designs, the IAUZ20N08S5L300ATMA1 functions as the input protection or hot-swap MOSFET. Its 80 V Vds rating exceeds the 20 V maximum USB-PD voltage with substantial margin, and the 30 mΩ Rds(on) minimizes voltage drop on the VBUS line at 5 A (only 150 mV drop). The 10.5 nC Qg enables fast turn-on/off for OVP and OCP response under microseconds, and the 3.3 x 3.3 mm S3O8 footprint fits tightly on compact Type-C connector daughter boards.
تجویز کردہ
E-Bike & Light Electric Vehicle Power Stages
Light electric vehicles such as e-bikes and e-scooters use 24 V to 48 V battery packs where the IAUZ20N08S5L300ATMA1 fits as a half-bridge switch in motor controllers. The 80 V Vds rating handles the back-EMF of brushless DC motors at full speed, while 20 A continuous current supports 250 W to 500 W motor power levels. The 30 mΩ Rds(on) keeps conduction losses below 3% at rated current, preserving battery range. The OptiMOS-5 fast switching characteristic reduces torque ripple at high PWM frequencies, improving ride smoothness.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IAUZ20N08S5L300ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IAUZ40N08S5N100ATMA1 | IAUC28N08S5L230ATMA1 | IAUC64N08S5L075ATMA1 | BSC052N08NS5ATMA1 | BSC123N08NS3GATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-32 (S3O8) | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same | PG-TSDSON-8-32 (S3O8) - same |
| Drain-Source Voltage (Vds) | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| On-State Resistance (Rds(on)) | 30 mΩ @ 10 A, 10 V | 100 mΩ | 23 mΩ | 7.5 mΩ | 5.2 mΩ | 12.3 mΩ |
| Technology | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-3 (older) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
اہم امتیازی خصوصیات
- OptiMOS-5 technology provides best-in-class FOM (Rds(on) × Qg) (بمقابلہBSC123N08NS3GATMA1 (OptiMOS-3))
- Lower Rds(on) than higher-Rds(on) family alternatives (بمقابلہIAUZ40N08S5N100ATMA1 (100 mΩ))
- Balanced Rds(on)/Qg trade-off for switching applications (بمقابلہIAUC64N08S5L075ATMA1 (7.5 mΩ, higher Qg))
ڈیزائن نوٹس
Estimated: At 10 A continuous drain current with 30 mΩ Rds(on), conduction loss is I²R = 100 × 0.030 = 3 W. The PG-TSDSON-8-32 package has a typical RthJA of approximately 50°C/W on a 1 sq-inch copper pour (4-layer FR4). Junction temperature rise is therefore roughly 150°C above ambient, requiring either substantial copper cooling or operation below 10 A in high-temperature environments. For sustained 20 A operation, increase copper area to at least 2 sq inches or use forced airflow.
The exposed drain pad on the bottom of the PG-TSDSON-8-32 package is the primary thermal path and must be soldered to a PCB copper pour of at least 1 square inch on the top layer, with thermal vias connecting to inner and bottom copper planes. Use an array of 0.3 mm thermal vias on a 0.6 mm pitch. Insufficient thermal via density can increase junction-to-ambient thermal resistance by 30-50% and lead to thermal runaway. Source pins 1-7 should be connected to a unified ground copper pour to minimize source-inductance-induced ringing.
A common pitfall with the IAUZ20N08S5L300ATMA1 is driving the gate below the rated 10 V enhancement voltage. At Vgs = 4.5 V, Rds(on) increases by 2-3x, dramatically raising conduction losses. Always use a gate-driver IC capable of sourcing 10 V at the gate charge current required by 10.5 nC Qg within the desired switching time. Add a 10-100 Ω gate resistor to dampen parasitic ringing, and place the gate-driver as close to the MOSFET gate pin as possible (less than 5 mm trace length).
For switching applications, the high-current loop (input capacitor → MOSFET drain-source → output) must be minimized to reduce parasitic inductance. Use wide copper pours or planes, and place the input bypass capacitor within 2-5 mm of the drain pad. The gate-drive loop should be kept small and isolated from the power loop to avoid capacitive coupling of dv/dt into the gate, which can cause spurious turn-on. A ground pour directly under the MOSFET can reduce EMI by providing a low-impedance return path.
تعمیل کی معلومات
AEC-Q101 (automotive discrete) qualified per Infineon product page. RoHS and REACH compliant. Halogen-free per Infineon product family policy.
