IAUZ40N08S5N100ATMA1 - 80V 40A N-Ch OptiMOS 5 MOSFET | Infineon
MPN: IAUZ40N08S5N100ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.5 | $1.50 |
| 10 | $1.35 | $13.50 |
| 100 | $1.18 | $118.00 |
| 500 | $0.98 | $490.00 |
| 1,000 | $0.82 | $820.00 |
| 3,000 | $0.71 | $2,130.00 |
Drop-in alternatives for IAUZ40N08S5N100ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
BSC123N08NS3GATMA1
✅ Drop-In✓ In Stock
$0.71 / Unit
View Datasheet →IAUC64N08S5L075ATMA1
✅ Drop-In✓ In Stock
$0.58 / Unit
View Datasheet →BSZ070N08LS5ATMA1
✅ Drop-In✓ In Stock
$0.78 / Unit
View Datasheet →BSC052N08NS5ATMA1
✅ Drop-In✓ In Stock
$0.52 / Unit
View Datasheet →NTMFS5C612NLT1G
✅ Drop-In📋 Reference alternative (not in catalog)
IAUZ40N08S5N100ATMA1 Maximum Ratings & Electrical Characteristics
| Technology | OptiMOS-5 N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | 40 A |
| Power Dissipation (PD, Tc=25°C) | 68 W |
| On-Resistance RDS(on) max | 10 mΩ @ VGS=10 V, ID=20 A |
| Total Gate Charge Qg typ | 24.2 nC @ VGS=10 V |
| Input Capacitance Ciss | 1591 pF @ VDS=40 V |
| Gate-Source Voltage VGS max | ±20 V |
| Operating Temperature Range | -55 °C to +175 °C (TJ) |
| Package | PG-TDSON-8 (S3O8) 3.3 × 3.3 mm |
| Mounting Type | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS Status | Compliant |
| Channel Type | N-Channel |
IAUZ40N08S5N100ATMA1 Pin Configuration
| Pin 1 | GATE — Gate drive input |
| Pin 2 | DRAIN — Drain connection (tied to thermal pad) |
| Pin 3 | DRAIN — Drain connection (tied to thermal pad) |
| Pin 4 | DRAIN — Drain connection (tied to thermal pad) |
| Pin 5 | DRAIN — Drain connection (tied to thermal pad) |
| Pin 6 | SOURCE — Source connection |
| Pin 7 | SOURCE — Source connection |
| Pin 8 | SOURCE — Source connection |
Safe Operating Area (DC)
Typical Applications
IAUZ40N08S5N100ATMA1 is suitable for 6 applications: Automotive LED Lighting Driver, 48V Mild-Hybrid Board-Net DC-DC, Electric Power Steering (EPS) Motor Drive, Braking System Pump/Valve Driver, Solenoid and Relay Driver (24V Industrial), USB-PD and 12V Hot-Swap Protection.
Automotive LED Lighting Driver
The IAUZ40N08S5N100ATMA1 is ideal as the low-side PWM switch in automotive LED front-light and DRL modules. With 10 mΩ RDS(on) at 10 V VGS, conduction loss stays below 1 W at 10 A continuous LED current, and the 80 V VDS rating provides margin against automotive load-dump transients up to 35 V. The AEC-Q101 qualification ensures operation across -40 °C to +125 °C ambient headlight environments. OptiMOS-5 switching characteristics also help designers meet CISPR 25 EMI limits without heavy snubbing.
Recommended
48V Mild-Hybrid Board-Net DC-DC
In 48V mild-hybrid automotive converters, the IAUZ40N08S5N100ATMA1 works as the synchronous rectifying MOSFET on the 12V output side of a buck or push-pull topology. Its 24.2 nC gate charge enables switching frequencies of 200-500 kHz, while 10 mΩ RDS(on) keeps synchronous-FET conduction loss manageable at 30-40 A peak currents. The 80 V rating covers 48V systems with standard transient headroom. The PG-TDSON-8 footprint supports the high-current density PCB layouts demanded by underhood converters.
Recommended
Electric Power Steering (EPS) Motor Drive
The IAUZ40N08S5N100ATMA1 serves as the low-side switch in three-phase EPS inverter half-bridges where reliability is critical. AEC-Q101 qualification, 175 °C maximum junction temperature, and 68 W power dissipation in the small PG-TDSON-8 package give the thermal margin required for 30 A continuous EPS phase currents. Its low RDS(on) reduces I²R losses that directly impact steering-effort fuel economy. The OptiMOS-5 process also lowers switching loss at 20 kHz PWM, reducing inverter heating.
Recommended
Braking System Pump/Valve Driver
In anti-lock braking (ABS) and electronic stability control (ESC) hydraulic pump drivers, the IAUZ40N08S5N100ATMA1 handles 15-25 A inductive load switching with reliable avalanche ruggedness. The 80 V VDS rating absorbs back-EMF spikes from DC motor windings, while the 10 mΩ RDS(on) limits steady-state heating during pump operation. AEC-Q101 qualification and the small 3.3 × 3.3 mm PCB footprint let designers fit multiple channels into compact ABS module enclosures. The OptiMOS-5 process also improves reverse-recovery behavior versus older MOSFETs.
Recommended
Solenoid and Relay Driver (24V Industrial)
For industrial 24V solenoid and relay driver outputs on PLCs and I/O modules, the IAUZ40N08S5N100ATMA1 acts as a low-side driver with freewheeling-diode protection. The 80 V VDS rating tolerates the inductive kickback of 24 V solenoids when commutated, while 40 A peak current capability handles inrush on large valves and contactors. The PG-TDSON-8 package enables compact multi-channel driver cards with shared heatsinking. Designers can pair it with a small gate driver such as the 1EDN8511BXUSA1 for fast, repeatable turn-off.
Recommended
USB-PD and 12V Hot-Swap Protection
The IAUZ40N08S5N100ATMA1 is well-suited as the hot-swap protection MOSFET on 12V automotive infotainment rails, including USB-PD and HDMI power outputs. Its 10 mΩ RDS(on) at 10 V VGS minimizes voltage drop across the protection FET, while 80 V VDS absorbs ringing on the 12V bus during load steps. AEC-Q101 qualification suits it for in-cabin automotive use. Pairing it with a hot-swap controller such as the ITS42K5DLDFXUMA1 gives designers a fast, self-protected power switch with current-limit behavior.
Recommended
Recommended Products Summary
Engineering reference data for IAUZ40N08S5N100ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSC123N08NS3GATMA1 | IAUC64N08S5L075ATMA1 | BSZ070N08LS5ATMA1 | BSC052N08NS5ATMA1 | NTMFS5C612NLT1G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-TDSON-8 (3.3×3.3 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | SO-8FL (PowerTDFN-8) - same land pattern |
| Drain-Source Voltage VDS | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| RDS(on) at VGS=10 V | 10 mΩ | 12 mΩ (+20%) | 7.5 mΩ (-25%) | 7.0 mΩ (-30%) | 5.2 mΩ (-48%) | 10 mΩ (similar) |
| Continuous Drain Current ID (Tc=25°C) | 40 A | 38 A | 50 A | 60 A | 65 A | 44 A |
| Total Gate Charge Qg | 24.2 nC | 30 nC | 20 nC | 18 nC | 15 nC | 26 nC |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-5 | OptiMOS-3 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | Shielded Gate PowerTrench |
| Approx. Unit Price (1pc, as of 2026-09-13) | $1.50 | $1.20 | $1.80 | $1.95 | $2.20 | $1.65 |
Key Differentiators
- Lower switching loss versus OptiMOS-3 generation (vs BSC123N08NS3GATMA1)
- Better RDS(on) at given die size (vs NTMFS5C612NLT1G)
- Lower cost than newer OptiMOS-5 7 mΩ variants (vs BSZ070N08LS5ATMA1)
- Higher current rating than 60V-class alternatives (vs IAUC60N04S6N044ATMA1)
Design Notes
Estimated: at VDS=24 V, ID=20 A, and 50% PWM duty cycle in a hot-loop application, the IAUZ40N08S5N100ATMA1 dissipates roughly 2.0 W from conduction loss alone (I²R = 20² × 0.010). With θJA of approximately 50 °C/W on a 1-square-inch copper pour, the junction rises 100 °C above ambient, so the case temperature must stay below 75 °C in underhood enclosures. A 4-layer PCB with 2 oz copper on the drain thermal pad keeps θJA near 40 °C/W and improves SOA margin.
Place the gate-drive loop (gate driver output, gate resistor, gate pin, source pin back to driver ground) over the smallest possible area to limit parasitic inductance. The drain-to-source switching loop must also be minimized - keep input bypass ceramic capacitors within 2 mm of the drain thermal pad and source pins. Source inductance shared between the power path and gate-drive path causes gate-oscillation and possible avalanche failure in hard-switched topologies.
Do not exceed VGS=±20 V (absolute maximum); exceeding ±20 V even briefly can destroy the gate oxide. Always add a 10 kΩ gate-source resistor to hold the MOSFET off during controller start-up. For PWM applications above 100 kHz, use a dedicated gate driver (1EDN8511BXUSA1 or IFX007TAUMA1) - driving 24.2 nC directly from a microcontroller GPIO will give unacceptably slow edges and high switching loss.
OptiMOS-5 switches in 20-50 ns rise times create high dV/dt on the 12V or 24V rail. Add a small RC snubber (10 Ω + 1 nF) across the MOSFET drain-source to dampen ringing, and place a ferrite bead on the supply rail to attenuate common-mode emissions. For CISPR 25 Class 5 compliance, consider a gate-source resistor of 10-47 Ω to slow the edge without significantly increasing switching loss.
Compliance Information
AEC-Q101 qualified for automotive discrete semiconductors (note: AEC-Q101 is the correct standard for MOSFETs, not AEC-Q100 which applies to ICs). RoHS and REACH compliant per Infineon product page.
