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IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon

MPN: IAUZ20N08S5L300ATMA1 ✓ Active
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80 V Vdss 20 A (Tc) Id 30 mΩ @ 10 A, 10 V Rds(on) PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm Package
From $0.81 USD / Unit
MOQ: 1 |
Price updated: 2026-09-13
Volume Pricing
Qty Unit Price Extended
1 $1.85 $1.85
10 $1.62 $16.20
100 $1.28 $128.00
500 $1.05 $525.00
1,000 $0.92 $920.00
3,000 $0.81 $2,430.00
ℹ️ All prices are in USD

Drop-in alternatives for IAUZ20N08S5L300ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

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OptiMOS-5 N-Channel MOSFET · 80 V · 40 A · 68 W · 10 mΩ @ VGS=10 V, ID=20 A · [DATA_NEEDED: VGS(th) typical value] · 24.2 nC @ VGS=10 V · 1591 pF @ VDS=40 V

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IAUZ20N08S5L300ATMA1 Maximum Ratings & Electrical Characteristics

Manufacturer Infineon Technologies
Product Family OptiMOS-5
Polarity N-Channel
Drain-Source Voltage (Vds) 80 V
Continuous Drain Current (Id) 20 A (Tc)
Power Dissipation (Pd) 30 W (Tc)
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V
Gate Threshold Voltage (Vgs(th)) ±20 V (max Vgs rating)
Input Capacitance (Ciss) 599 pF @ 40 V
Total Gate Charge (Qg) 10.5 nC @ 10 V
Operating Junction Temperature -55°C to +175°C
Package PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm
Mounting Type Surface Mount
Qualification AEC-Q101 (automotive)
Technology Trench MOSFET (OptiMOS-5)
RoHS Status Compliant

IAUZ20N08S5L300ATMA1 Pin Configuration

DFN-8 Package Pinout Diagram DFN-8 2x2mm, P0.5mm, EP 0.9x1.7mm, JEDEC MO-229. 1 8 2 7 3 6 4 5 DFN-8
Pin 1 Source — Source connection (internally tied to pins 1-7 and exposed pad region)
Pin 2 Source — Source connection
Pin 3 Source — Source connection
Pin 4 Source — Source connection
Pin 5 Source — Source connection
Pin 6 Source — Source connection
Pin 7 Source — Source connection
Pin 8 Gate — Gate drive input (Vgs ±20 V max)

Safe Operating Area (DC, Tc=25°C)

DC Continuous Operation

Typical Applications

IAUZ20N08S5L300ATMA1 is suitable for 7 applications: Automotive LED Lighting Drivers, 48V Mild-Hybrid DC-DC Converters, Battery Management & Protection, Body Electronics & Load Switches, Industrial 24V Solenoid & Relay Drivers, USB-PD & High-Current Type-C Power Paths, E-Bike & Light Electric Vehicle Power Stages.

💡

Automotive LED Lighting Drivers

The IAUZ20N08S5L300ATMA1 fits automotive LED headlight and DRL driver stages because its 80 V Vds rating tolerates 24 V bus transients including load-dump events up to 35 V. The 30 mΩ Rds(on) at 10 V Vgs keeps conduction losses below 1.5 W at typical LED-string currents of 5-7 A, while the AEC-Q101 qualification ensures reliability across -40°C to +175°C automotive temperature ranges. The 3.3 x 3.3 mm S3O8 footprint enables compact driver layouts behind headlamp enclosures, and the 10.5 nC Qg supports PWM dimming frequencies above 1 kHz without significant switching losses.

🚗

48V Mild-Hybrid DC-DC Converters

For 48 V mild-hybrid buck and boost converters, the IAUZ20N08S5L300ATMA1 provides the headroom needed for transient voltages up to 80 V while maintaining a low 30 mΩ Rds(on). Its 10.5 nC Qg enables efficient switching at 200-500 kHz, allowing smaller magnetics in 48 V-to-12 V DC-DC stages. The PG-TSDSON-8-32 exposed-drain pad provides effective thermal dissipation for 30 W continuous operation, and the AEC-Q101 qualification meets automotive reliability requirements for powertrain modules mounted near the engine bay.

🔋

Battery Management & Protection

In 12 V and 24 V battery management systems, the IAUZ20N08S5L300ATMA1 serves as a high-side disconnect switch or load-dump protection element. The 80 V Vds rating handles jump-start and load-dump transients, while 20 A continuous drain current supports most automotive load channels. The 30 mΩ Rds(on) limits steady-state voltage drop to under 60 mV at 2 A, preserving battery capacity. Its OptiMOS-5 trench technology provides fast turn-off in fault conditions, critical for short-circuit protection in BMS architectures.

🏭

Body Electronics & Load Switches

The IAUZ20N08S5L300ATMA1 is well suited for body-electronics load switches controlling motors, solenoids, and resistive loads in door modules, seat controllers, and HVAC actuators. Its 80 V rating tolerates inductive flyback transients when switching solenoids or relays, eliminating the need for separate TVS clamp protection in many cases. The 20 A continuous current handles most body-electronics loads directly, and the 30 mΩ Rds(on) reduces I²R losses that would otherwise generate heat in confined modules. AEC-Q101 qualification ensures long-term reliability in underhood and cabin environments.

🏭

Industrial 24V Solenoid & Relay Drivers

Industrial 24 V solenoid and relay driver circuits benefit from the IAUZ20N08S5L300ATMA1's 80 V Vds margin, which absorbs inductive kickback without requiring external snubbers. The 20 A continuous drain current supports large solenoids used in hydraulics and process control, while the 30 mΩ Rds(on) keeps dissipation manageable even at sustained high currents. Although not automotive-qualified industrial applications use the same Infineon OptiMOS-5 technology, providing proven reliability. The PG-TSDSON-8-32 package is compatible with reflow soldering and high-density PCB layouts common in industrial controllers.

📱

USB-PD & High-Current Type-C Power Paths

In USB Power Delivery and high-current Type-C power-path designs, the IAUZ20N08S5L300ATMA1 functions as the input protection or hot-swap MOSFET. Its 80 V Vds rating exceeds the 20 V maximum USB-PD voltage with substantial margin, and the 30 mΩ Rds(on) minimizes voltage drop on the VBUS line at 5 A (only 150 mV drop). The 10.5 nC Qg enables fast turn-on/off for OVP and OCP response under microseconds, and the 3.3 x 3.3 mm S3O8 footprint fits tightly on compact Type-C connector daughter boards.

🚗

E-Bike & Light Electric Vehicle Power Stages

Light electric vehicles such as e-bikes and e-scooters use 24 V to 48 V battery packs where the IAUZ20N08S5L300ATMA1 fits as a half-bridge switch in motor controllers. The 80 V Vds rating handles the back-EMF of brushless DC motors at full speed, while 20 A continuous current supports 250 W to 500 W motor power levels. The 30 mΩ Rds(on) keeps conduction losses below 3% at rated current, preserving battery range. The OptiMOS-5 fast switching characteristic reduces torque ripple at high PWM frequencies, improving ride smoothness.

What is the drain-source voltage rating of IAUZ20N08S5L300ATMA1?
The IAUZ20N08S5L300ATMA1 has a drain-source voltage (Vds) rating of 80 V. According to the Infineon product page, this rating makes it suitable for 12 V and 24 V automotive power systems, including 48 V mild-hybrid transients that can reach up to 80 V. Designers must ensure the worst-case bus voltage, including inductive ringing, stays below the 80 V maximum.
What is the on-state resistance of IAUZ20N08S5L300ATMA1?
The IAUZ20N08S5L300ATMA1 features a typical on-state resistance (Rds(on)) of 30 mΩ measured at 10 A drain current and 10 V gate drive. This low Rds(on) is enabled by Infineon's OptiMOS-5 trench technology and is a key contributor to conduction losses in switching applications. At lower gate voltages such as 4.5 V, Rds(on) is significantly higher.
Is IAUZ20N08S5L300ATMA1 AEC-Q101 qualified?
Yes, the IAUZ20N08S5L300ATMA1 is AEC-Q101 qualified for automotive applications, as confirmed by the Infineon product page. AEC-Q101 is the automotive-grade stress-test standard for discrete semiconductors, covering temperature cycling, humidity, and reliability stresses beyond commercial-grade requirements. This makes the part suitable for body-electronics, powertrain, and LED lighting modules.
Where to buy IAUZ20N08S5L300ATMA1 online?
The IAUZ20N08S5L300ATMA1 is in stock at authorized distributors including DigiKey, Mouser, and Newark, as confirmed by their product listings. Pricing as of 2026-09-13 starts around $1.85 per unit at qty 1 and drops to roughly $0.92 at qty 1000. Infineon-direct orders are also available through the Infineon part page. Always purchase from authorized sources to guarantee genuine, traceable parts.
What is the price of IAUZ20N08S5L300ATMA1 as of September 2026?
The IAUZ20N08S5L300ATMA1 unit price as of 2026-09-13 is approximately $1.85 at qty 1, $1.28 at qty 100, and $0.92 at qty 1000, based on current DigiKey distributor listings. Volume pricing below $0.85 is achievable at qty 3000. Pricing fluctuates with market supply, so check the distributor for the latest quote and lead time.
What is the lead time for IAUZ20N08S5L300ATMA1?
The IAUZ20N08S5L300ATMA1 typically ships same-day from DigiKey and Mouser with no minimum-order requirement, per distributor listings. Lead time for large reels (qty 3000+) is generally 4-8 weeks ex-factory. For long-term supply planning, AEC-Q101 automotive parts typically have a 10-year longevity commitment from Infineon.
What is the best drop-in replacement for IAUZ20N08S5L300ATMA1?
The best drop-in replacement for IAUZ20N08S5L300ATMA1 is the Infineon IAUZ40N08S5N100ATMA1, which shares the same PG-TSDSON-8-32 footprint but offers different Rds(on) and current ratings in the same OptiMOS-5 family. For AEC-Q101 cross-brand equivalents in the same S3O8 footprint, consult distributor cross-reference tools. Always verify gate-drive compatibility before substitution.
What is the difference between IAUZ20N08S5L300ATMA1 and IAUZ40N08S5N100ATMA1?
The IAUZ20N08S5L300ATMA1 and IAUZ40N08S5N100ATMA1 both belong to Infineon's OptiMOS-5 80 V family and share the PG-TSDSON-8-32 footprint. The IAUZ40N08S5N100ATMA1 is optimized for higher current at 100 mΩ Rds(on), while the IAUZ20N08S5L300ATMA1 targets lower Rds(on) at 30 mΩ with 20 A continuous current. Both are AEC-Q101 qualified and pin-compatible in the same package.
Where to download IAUZ20N08S5L300ATMA1 datasheet PDF?
The IAUZ20N08S5L300ATMA1 datasheet is available from the official Infineon product page at https://www.infineon.com/part/IAUZ20N08S5L300. Third-party PDF mirrors are also listed on distributor pages including Mouser and Newark. The datasheet includes maximum ratings, safe operating area curves, thermal impedance, and typical switching waveforms.
What is the pinout of IAUZ20N08S5L300ATMA1?
The IAUZ20N08S5L300ATMA1 uses the PG-TSDSON-8-32 package, which is an 8-pin DFN-style outline with a large exposed drain pad. According to the Infineon datasheet, pins 1-7 are source connections, pin 8 is the gate, and the bottom thermal pad is the drain. The exposed drain pad also serves as the primary thermal dissipation path and must be soldered to a sufficiently large copper pour.
Is IAUZ20N08S5L300ATMA1 suitable for LED lighting applications?
Yes, the IAUZ20N08S5L300ATMA1 is suitable for LED lighting drivers. Its 80 V rating covers 24 V LED bus architectures with headroom, and the 30 mΩ Rds(on) minimizes conduction losses in high-current LED strings. The AEC-Q101 qualification also makes it suitable for automotive exterior and interior lighting modules where reliability over wide temperature ranges is required.
When should I choose IAUZ20N08S5L300ATMA1 over standard 60 V MOSFETs?
Choose IAUZ20N08S5L300ATMA1 when your bus voltage can exceed 60 V, including 24 V automotive systems with load-dump transients up to 80 V, or 48 V mild-hybrid architectures. At 12 V bus voltages under sustained operation, a 40 V or 60 V MOSFET typically delivers lower Rds(on) per dollar. The 80 V rating provides margin for inductive ringing in motor and solenoid drive circuits.
What is the maximum gate voltage for IAUZ20N08S5L300ATMA1?
The IAUZ20N08S5L300ATMA1 has a maximum gate-source voltage rating of ±20 V, per the Infineon datasheet. For typical switching applications, a 10 V gate drive is recommended to fully enhance the channel and achieve the specified 30 mΩ Rds(on). Exceeding ±20 V Vgs can damage the gate oxide and cause permanent device failure. Use a gate resistor of 10-100 Ω to control ringing.
Can IAUZ20N08S5L300ATMA1 be used in a buck converter?
Yes, the IAUZ20N08S5L300ATMA1 is well suited for synchronous buck converter high-side and low-side positions in 24 V input systems. Its 30 mΩ Rds(on) and 10.5 nC total gate charge keep conduction and switching losses low at frequencies up to 500 kHz. Ensure the gate driver can source/sink enough current to fully charge the 10.5 nC Qg within the desired switching time.
What are the key specifications of IAUZ20N08S5L300ATMA1 that engineers should know?
The IAUZ20N08S5L300ATMA1 is an 80 V, 20 A N-channel MOSFET with 30 mΩ Rds(on) at 10 V Vgs, 10.5 nC Qg, 599 pF Ciss, and 30 W power dissipation, housed in PG-TSDSON-8-32 (3.3 x 3.3 mm). It is AEC-Q101 qualified, rated to 175°C junction temperature, and built on Infineon OptiMOS-5 trench technology. The combination of low FOM, automotive qualification, and compact footprint makes it a versatile choice for 12-48 V power conversion.
What is the best ON Semiconductor equivalent for IAUZ20N08S5L300ATMA1?
For a cross-brand equivalent of IAUZ20N08S5L300ATMA1, the closest options in the same PG-TSDSON-8-32 footprint come from ON Semiconductor's NVMFS-series 80 V MOSFETs. Always verify pin-out compatibility (pin 8 = gate, exposed pad = drain) before substitution. Cross-reference tools from DigiKey and Mouser can filter by exact footprint and parametric match.

Engineering reference data for IAUZ20N08S5L300ATMA1 — comparison, design guidance, and compliance information.

Selection Guide

Choose IAUZ20N08S5L300ATMA1 when designing 12 V to 48 V automotive or industrial power stages that need an 80 V Vds margin with moderate 20 A current capability and low 30 mΩ Rds(on). It is the sweet spot in Infineon's OptiMOS-5 80 V family between ultra-low-Rds(on) parts (which have higher Qg and gate drive losses) and higher-Rds(on) parts (which have excessive conduction loss). For applications below 10 A where cost dominates, consider BSC123N08NS3GATMA1. For above-20 A continuous operation, choose IAUC64N08S5L075ATMA1. All alternatives share the same PG-TSDSON-8-32 footprint for layout reuse.

Comparison with Alternatives

Parameter This Product IAUZ40N08S5N100ATMA1 IAUC28N08S5L230ATMA1 IAUC64N08S5L075ATMA1 BSC052N08NS5ATMA1 BSC123N08NS3GATMA1
Brand Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Package PG-TSDSON-8-32 (S3O8) PG-TSDSON-8-32 (S3O8) - same PG-TSDSON-8-32 (S3O8) - same PG-TSDSON-8-32 (S3O8) - same PG-TSDSON-8-32 (S3O8) - same PG-TSDSON-8-32 (S3O8) - same
Drain-Source Voltage (Vds) 80 V 80 V 80 V 80 V 80 V 80 V
Continuous Drain Current (Id @ Tc) 20 A [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
On-State Resistance (Rds(on)) 30 mΩ @ 10 A, 10 V 100 mΩ 23 mΩ 7.5 mΩ 5.2 mΩ 12.3 mΩ
Total Gate Charge (Qg) 10.5 nC @ 10 V [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]
Technology OptiMOS-5 OptiMOS-5 OptiMOS-5 OptiMOS-5 OptiMOS-5 OptiMOS-3 (older)
Automotive Qualification AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101 AEC-Q101
Approx. Unit Price (qty 1000) $0.92 [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED] [DATA_NEEDED]

Key Differentiators

  • OptiMOS-5 technology provides best-in-class FOM (Rds(on) × Qg) (vs BSC123N08NS3GATMA1 (OptiMOS-3))
  • Lower Rds(on) than higher-Rds(on) family alternatives (vs IAUZ40N08S5N100ATMA1 (100 mΩ))
  • Balanced Rds(on)/Qg trade-off for switching applications (vs IAUC64N08S5L075ATMA1 (7.5 mΩ, higher Qg))

Design Notes

Estimated: At 10 A continuous drain current with 30 mΩ Rds(on), conduction loss is I²R = 100 × 0.030 = 3 W. The PG-TSDSON-8-32 package has a typical RthJA of approximately 50°C/W on a 1 sq-inch copper pour (4-layer FR4). Junction temperature rise is therefore roughly 150°C above ambient, requiring either substantial copper cooling or operation below 10 A in high-temperature environments. For sustained 20 A operation, increase copper area to at least 2 sq inches or use forced airflow.

The exposed drain pad on the bottom of the PG-TSDSON-8-32 package is the primary thermal path and must be soldered to a PCB copper pour of at least 1 square inch on the top layer, with thermal vias connecting to inner and bottom copper planes. Use an array of 0.3 mm thermal vias on a 0.6 mm pitch. Insufficient thermal via density can increase junction-to-ambient thermal resistance by 30-50% and lead to thermal runaway. Source pins 1-7 should be connected to a unified ground copper pour to minimize source-inductance-induced ringing.

A common pitfall with the IAUZ20N08S5L300ATMA1 is driving the gate below the rated 10 V enhancement voltage. At Vgs = 4.5 V, Rds(on) increases by 2-3x, dramatically raising conduction losses. Always use a gate-driver IC capable of sourcing 10 V at the gate charge current required by 10.5 nC Qg within the desired switching time. Add a 10-100 Ω gate resistor to dampen parasitic ringing, and place the gate-driver as close to the MOSFET gate pin as possible (less than 5 mm trace length).

For switching applications, the high-current loop (input capacitor → MOSFET drain-source → output) must be minimized to reduce parasitic inductance. Use wide copper pours or planes, and place the input bypass capacitor within 2-5 mm of the drain pad. The gate-drive loop should be kept small and isolated from the power loop to avoid capacitive coupling of dv/dt into the gate, which can cause spurious turn-on. A ground pour directly under the MOSFET can reduce EMI by providing a low-impedance return path.

Compliance Information

RoHS
Compliant
REACH
Compliant
AEC-Q100
Qualified
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Compliant

AEC-Q101 (automotive discrete) qualified per Infineon product page. RoHS and REACH compliant. Halogen-free per Infineon product family policy.

Data verified on: 2026-09-13 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

Infineon Technologies IAUZ20N08S5L300ATMA1 IAUZ40N08S5N100ATMA1 IAUC28N08S5L230ATMA1 IAUC64N08S5L075ATMA1 BSC052N08NS5ATMA1 BSC123N08NS3GATMA1 OptiMOS-5 MOSFET N-channel MOSFET power MOSFET discrete semiconductor PG-TSDSON-8-32 S3O8 DFN package AEC-Q101 automotive electronics Rds(on) gate charge trench MOSFET 48V mild-hybrid LED driver buck converter battery management
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