IPD60R180P7ATMA1 - 600V 180mOhm CoolMOS P7 MOSFET | Infineon
MPN: IPD60R180P7ATMA1 ✓ فعالIPD60R180P7ATMA1 جائزہ
A superjunction MOSFET is a power-MOSFET architecture that uses alternating P/N epitaxial layers to push the silicon area-specific on-resistance well below what conventional planar MOSFETs can achieve at the same breakdown voltage. CoolMOS P7 is Infineon's 7th-generation refinement of this concept, combining the fast-switching SJ cell with very low parasitic capacitances and a controlled body-diode dv/dt, which yields lower ringing, reduced EMI, and simplified gate-drive design versus earlier P6 series parts.
Key headline specifications include: 600 V drain-source breakdown (VBR(DSS)), 180 mOhm maximum RDS(on) at VGS=10 V, a typical gate charge QG of around 18 nC, an ultra-low effective output capacitance Coss(eff) that reduces switching loss in hard-switched topologies, and an avalanche-rated single-pulse body diode. The integrated Zener-protected gate oxide increases ESD robustness and tolerates VGS transients up to +/-20 V.
Architecturally, the CoolMOS P7 cell uses a deep-trench superjunction structure that delivers the same RDS(on) area as a 500 V planar part while still rating for 600 V operation, giving the designer extra margin for 390 V PFC bulk rails or universal-input rectified buses up to 420 V. The fast body diode and tight parameter distribution across lots simplify LLC, PFC, and flyback converter design-in.
Typical applications include PFC boost stages in 80 PLUS Titanium PSUs, LLC half-bridge primaries in server and telecom rectifiers, flyback switches in industrial SMPS adapters, solar micro-inverters, LED driver boost stages, and auxiliary housekeeping converters in white goods and e-mobility charging stations. Any application that previously used a 600 V CoolMOS P6 part can directly drop in the P7 for higher efficiency and easier EMI compliance.
When designing with this part, keep the gate-drive loop compact (gate-source resistor under 10 ohm, optional ferrite bead) and use an isolated or kelvin-source package when switching speeds above 100 kHz to suppress source-inductance ringing. Confirm that the application's worst-case avalanche energy (EAS) and dv/dt stay within the datasheet SOA curves.
This page synthesizes distributor pricing, drop-in compatible CoolMOS P7 alternatives, and practical layout notes that go well beyond the manufacturer datasheet summary, giving power-supply engineers a single decision-ready reference.
کے لیے ڈراپ اِن متبادل IPD60R180P7ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IPD60R180P7ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Drain-Source Voltage (VDS), Technology, MSL Level, Operating Junction Temperature.
IPD60R180P7
✅ ڈراپ-اِن📋 حوالہ جاتی متبادل (کیٹلاگ میں نہیں)
IPD65R380E6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD50N06S409ATMA2
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD5N25S3430ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IAUC60N04S6L030HATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPD60R180P7ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Product Family | CoolMOS P7 |
| Technology | Superjunction (SJ) N-channel MOSFET |
| Drain-Source Voltage (VDS) | 600 V |
| Continuous Drain Current (ID) at TC=25C | 18 A |
| On-Resistance RDS(on) max at VGS=10V | 180 mOhm |
| Gate-Source Voltage (VGS) max | +/-20 V |
| Total Power Dissipation (PD) at TC=25C | 72 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +150C |
| پیکیج | PG-TO252-3 (DPAK) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| MSL لیول | 1 (unlimited) |
| RoHS اسٹیٹس | Compliant |
| Lead-Free | Yes |
| Shipping Package | Tape and Reel (ATMA1 suffix) |
IPD60R180P7ATMA1 پن کنفیگریشن
| پن 1 | Gate (G) — Gate control input; VGS drive referenced to Source |
| پن 2 | Drain (D) — Main power terminal; also connected to the metal tab |
| پن 3 | Source (S) — Power return; reference for gate drive and Kelvin source |
| پن Tab | Drain (D) — Metal tab internally connected to pin 2 Drain; provides primary thermal path |
محفوظ آپریٹنگ ایریا (DC, TC=25C)
عام استعمالات
IPD60R180P7ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: PFC Boost Stage in Universal-Input SMPS, LLC Half-Bridge Primary Switch, Industrial Flyback SMPS Primary Switch, Solar Micro-Inverter DC-AC Stage, LED Driver Boost Stage, E-Mobility Charging Station Auxiliary SMPS.
PFC Boost Stage in Universal-Input SMPS
The IPD60R180P7ATMA1 fits the PFC boost switch position in 80 PLUS Silver-to-Gold ATX and adapter power supplies. Its 600 V VDS rating easily covers rectified 265 VAC mains (peak ~375 V DC) with margin for surge, while 180 mOhm RDS(on) at 18 A keeps conduction loss under 1.5 W at full load. CoolMOS P7's low Coss(eff) reduces hard-switching loss at 65-100 kHz CCM PFC, improving efficiency by 1-2 percentage points versus planar 600 V MOSFETs.
تجویز کردہ
LLC Half-Bridge Primary Switch
In LLC resonant converter primaries for server and telecom 48 V rectifiers, the IPD60R180P7ATMA1 delivers the fast body-diode reverse recovery and tight Coss tolerance that P7 is designed for. Two devices form the half-bridge across the resonant tank; 600 V rating tolerates the LLC magnetizing-inductance overshoot beyond bus voltage. The 180 mOhm RDS(on) is a good compromise between conduction loss and gate-drive loss at 100-200 kHz operation.
تجویز کردہ
Industrial Flyback SMPS Primary Switch
The IPD60R180P7ATMA1 is a strong fit for the primary-side switch of 50-150 W industrial flyback converters used in machine-control auxiliary supplies and white goods. CoolMOS P7's integrated gate Zener protection (VGS +/-20 V tolerant) tolerates the flyback leakage-inductance spikes that frequently destroy planar MOSFETs. The PG-TO252-3 DPAK package allows compact heatsink-less designs up to 90 W input with proper copper thermal management.
تجویز کردہ
Solar Micro-Inverter DC-AC Stage
For sub-300 W solar micro-inverters running from a 40-60 V PV string through a high-voltage boost to 400 V DC bus, the IPD60R180P7ATMA1 is suitable for the DC-AC full-bridge switches when paired with an isolation transformer and proper gate driver. The 600 V rating allows large safety margin over the 400 V bus. Low Coss(eff) improves light-load efficiency, important for solar yield during low-irradiance morning/evening conditions.
تجویز کردہ
LED Driver Boost Stage
The IPD60R180P7ATMA1 in the boost switch position of commercial LED drivers (24-48 V input, 60-100 V output at 0.5-1 A LED current) handles the switching stress with low ringing thanks to P7's controlled body-diode dv/dt. 180 mOhm RDS(on) keeps conduction loss manageable at continuous-conduction-mode operation. The DPAK package dissipates the ~3-5 W switching+conduction loss with a small copper pad, eliminating heatsink cost.
تجویز کردہ
E-Mobility Charging Station Auxiliary SMPS
The IPD60R180P7ATMA1 works as the primary switch in 100-300 W auxiliary supplies that power control boards and contactors in Level 2 EV charging stations. Universal-input 90-265 VAC operation pushes the bulk rail to 420 V DC; the 600 V rating covers this with 30% derating. Industrial-grade temperature range (-55 C to +150 C) suits outdoor cabinet thermal environments. CoolMOS P7 efficiency keeps no-load consumption below 75 mW for ENERGY STAR compliance.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IPD60R180P7ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | IPD60R180P7 | IPD65R380E6ATMA1 | IPD5N25S3430ATMA1 | IAUC60N04S6L030HATMA1 | IPD50N06S409ATMA2 |
|---|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon - same | Infineon - same | Infineon - same | Infineon - same | Infineon - same |
| Drain-Source Voltage (VDS) | 600 V | 600 V - same | 650 V (+8%) | 250 V (-58%) | 40 V (-93%) | 60 V (-90%) |
| On-Resistance RDS(on) max | 180 mOhm | 180 mOhm - same | 380 mOhm (+111%) | 43 mOhm (-76%) | 3.0 mOhm (-98%) | 4.9 mOhm (-97%) |
| Technology Family | CoolMOS P7 (Superjunction) | CoolMOS P7 - same | CoolMOS E6 | CoolMOS S3 | OptiMOS automotive | OptiMOS industrial |
| Automotive Grade | No (industrial) | No - same | No | No | Yes (AEC-Q101) | No |
| Shipping Format | Tape & Reel (ATMA1) | Tray/Tube (no ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA1) | Tape & Reel (ATMA2) |
اہم امتیازی خصوصیات
- CoolMOS P7 generation with lowest Coss(eff) in 600 V class (بمقابلہIPD65R380E6ATMA1 (CoolMOS E6))
- Integrated Zener-protected gate oxide (بمقابلہIPD50N06S409ATMA2 (OptiMOS planar))
- Fast body diode with controlled reverse recovery (بمقابلہIAUC60N04S6L030HATMA1 (40 V OptiMOS))
ڈیزائن نوٹس
The PG-TO252-3 (DPAK) package has a junction-to-ambient thermal resistance RthJA of approximately 50 C/W on a 1 sq-inch single-sided copper pour, dropping to ~35 C/W with 2 oz copper on a 4 sq-inch pad. At 5 W total dissipation (typical 90 W flyback at 70 percent efficiency), the junction rises 175-250 C above ambient - well above the 150 C rating. Mount the tab to at least 4 sq-inch of 2 oz copper, or attach a small clip-on heatsink (10-15 C/W) for designs above 3 W dissipation. Estimated junction rise based on datasheet RthJA and assumed copper geometry.
Keep the gate-drive loop (gate resistor to gate pin to source pin back to driver ground) under 1 cm² to minimize parasitic inductance. The DPAK package lacks a Kelvin source, so source inductance is shared between power and gate loops - use a small ferrite bead or 5-10 ohm gate resistor to damp ringing above 50 MHz. Place the gate-driver IC within 5 mm of the gate pin and use wide (>= 0.5 mm) source-side copper to reduce common-source inductance.
Do not exceed VGS = +/-20 V even though CoolMOS P7 has a Zener-protected gate - sustained over-voltage will degrade the gate oxide. Drive the gate with 10-12 V for RDS(on) spec compliance, not 15 V. Do not parallel IPD60R180P7ATMA1 devices without individual gate resistors; even small parameter mismatches can cause current hogging. Verify avalanche energy EAS stays within the single-pulse curve from the datasheet when designing flyback converters with significant leakage inductance.
Solder the DPAK tab to a copper pad equal to the package footprint (approximately 6.5 mm x 6.5 mm with thermal vias underneath). Use 4-6 thermal vias of 0.3 mm diameter to the opposite copper layer for heat spreading to a ground plane or inner plane. Keep the drain copper area away from the gate trace by at least 2 mm to minimize Miller capacitance coupling and prevent parasitic turn-on during high dv/dt transitions.
تعمیل کی معلومات
RoHS and REACH compliant per Infineon product page. Industrial grade - not AEC-Q100/Q101 qualified. For automotive, see IAUC60N04S6L030HATMA1 in same package.
