IQFH55N04NM6ATMA1 - 40V 451A 0.55mΩ OptiMOS 6 MOSFET | Infineon
MPN: IQFH55N04NM6ATMA1 ✓ فعالIQFH55N04NM6ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used as the core building block of power management circuits. Within the broader taxonomy, this part belongs to: discrete semiconductor -> transistor -> MOSFET -> N-channel enhancement-mode power MOSFET -> low-voltage (<=100 V) power MOSFET -> synchronous rectifier / load switch. The IQFH55N04NM6ATMA1 belongs to Infineon's OptiMOS 6 family, which represents the 6th generation of Infineon's optimized trench MOSFET platform aimed at minimizing conduction and switching losses simultaneously.
Key features include a maximum static drain-source on-resistance that is among the lowest in this voltage class, an exceptionally compact clip-based PQFN 8x6 mm² package that exposes the top metal as a thermal interface, and qualified operation over -55°C to +175°C junction temperature. The device is targeted at high-current, high-efficiency switching applications where every milliohm of R_DS(on) translates into measurable conduction loss reduction.
From an architecture standpoint, the OptiMOS 6 cell shrinks the per-die channel pitch and improves gate charge / R_DS(on) figure-of-merit (FOM = Q_G × R_DS(on)) relative to the OptiMOS 5 generation. The clip-based PQFN construction replaces internal wire bonds with a copper clip on the source pad, simultaneously reducing source inductance, lowering parasitic resistance, and providing a low thermal-resistance path from die top to PCB top metal — all critical when the part is switching at high frequency with very high di/dt.
Typical applications include battery-powered cordless tools, e-bike and e-scooter motor drives, low-voltage DC-DC converter synchronous rectifiers, USB Power Delivery (PD) sink paths, telecom hot-swap controllers, and high-current load switches in industrial 24 V / 36 V bus systems. The wide safe operating area also suits it as a replacement for older TO-220 / D²KAK MOSFETs where board area is constrained.
When designing with this part, pay close attention to gate-drive voltage: OptiMOS 6 devices achieve their rated R_DS(on) only when driven by 10 V VGS. A 5 V logic-level drive is NOT sufficient and will leave the MOSFET partially enhanced with very high R_DS(on). Additionally, the clip-based PQFN requires substantial PCB top-side copper — preferably both inner and outer copper layers stitched with thermal vias — to realize the rated power dissipation.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, application-specific design notes, and parametric comparisons not found in the manufacturer datasheet alone — engineers evaluating a 40 V synchronous-rectifier MOSFET or a high-current load switch can use this single reference to make a sourcing and design decision.
کے لیے ڈراپ اِن متبادل IQFH55N04NM6ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں IQFH55N04NM6ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Technology, Operating Temperature Range, Power Dissipation (Tc), Drain-Source Voltage (VDS).
ISC045N03L5SATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC50N04S5L5R5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC076N04NDATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH50NE2LM7ZCGATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQDH35N03LM5SCATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQFH55N04NM6ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Part Family | OptiMOS 6 |
| ٹرانزسٹر کی قسم | N-Channel MOSFET |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current (I_D) @ TA=25°C | 53 A |
| Pulsed Drain Current @ TC=25°C | 451 A |
| Static R_DS(on) (typ) | 0.55 mΩ |
| Power Dissipation (TA) | 3 W |
| Power Dissipation (TC) | 214 W |
| پیکیج | PG-TSON-12-1 (PQFN 8x6 mm², clip-based) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| آپریٹنگ جنکشن درجہ حرارت | -55°C to +175°C |
| Technology | Trench MOSFET (OptiMOS 6 generation) |
| RoHS اسٹیٹس | Compliant |
IQFH55N04NM6ATMA1 پن کنفیگریشن
| پن 1 | Source — Source terminal (also connected to exposed top pad) |
| پن 2 | Source — Source terminal |
| پن 3 | Source — Source terminal |
| پن 4 | Gate — Gate terminal — drive at V_GS=10 V for full enhancement |
| پن 5 | Gate — Gate terminal (multi-pin for reduced gate-loop inductance) |
| پن 6 | Gate — Gate terminal (multi-pin for reduced gate-loop inductance) |
| پن 7 | Source — Source terminal |
| پن 8 | Source — Source terminal |
| پن 9 | Source — Source terminal |
| پن 10 | Drain — Drain terminal — typically internally connected to bottom pad |
| پن 11 | Drain — Drain terminal |
| پن 12 | Drain — Drain terminal |
محفوظ آپریٹنگ ایریا (DC, TC=25°C)
عام استعمالات
IQFH55N04NM6ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 12V Synchronous Rectifier in Buck Converters, Battery-Powered Cordless Tool Motor Drive, E-Bike and E-Scooter Battery Management, USB Power Delivery (PD) Sink Path, Industrial 24 V Hot-Swap Controller, Telecom 48 V Intermediate Bus Converter.
12V Synchronous Rectifier in Buck Converters
The IQFH55N04NM6ATMA1 is ideal as the low-side synchronous-rectifier MOSFET in 12 V-input buck and buck-boost DC-DC converters. Its 0.55 mΩ R_DS(on) at V_GS=10 V yields conduction losses below ~0.55 W at 10 A output current, while the OptiMOS 6 figure-of-merit keeps switching losses low at 300-500 kHz switching frequency. The 40 V V_DS provides ample headroom above the 12 V rail plus transient spikes, and the clip-based PQFN 8x6 source-inductance reduction limits overshoot during hard switching transitions.
تجویز کردہ
Battery-Powered Cordless Tool Motor Drive
The IQFH55N04NM6ATMA1 serves as the high-current switching element in 18-20 V cordless tool motor drives (drills, impact drivers, saws). Its 451 A pulsed current rating handles the inrush during motor startup and stall conditions, while the 0.55 mΩ R_DS(on) minimizes conduction loss under sustained running current of 20-40 A — directly extending battery runtime. The PQFN 8x6 clip package survives the high vibration and thermal-cycling environment of hand-held tools when properly land-patterned on FR-4 with thermal vias.
تجویز کردہ
E-Bike and E-Scooter Battery Management
In 24 V / 36 V / 48 V e-bike and e-scooter battery management systems, the IQFH55N04NM6ATMA1 is well suited as the protection-disconnect MOSFET and precharge path. Its 40 V V_DS comfortably covers 24 V packs (and is marginal above 36 V — derate carefully), while the 0.55 mΩ R_DS(on) keeps the I²R drop low during the 10-30 A continuous discharge of the drive motor. The PQFN 8x6 footprint integrates cleanly into the space-constrained BMS PCB.
تجویز کردہ
USB Power Delivery (PD) Sink Path
In USB-PD sink designs accepting 20 V / 5 A (100 W), the IQFH55N04NM6ATMA1 acts as the input-protection and reverse-current-blocking MOSFET. The 40 V V_DS handles 20 V input plus Type-C cable-transient ringing, and the 0.55 mΩ R_DS(on) yields only ~14 mV drop at 5 A — well within the USB-PD tolerance. The OptiMOS 6 low Q_G supports high-frequency switching in PD controllers without introducing excessive gate-drive losses.
تجویز کردہ
Industrial 24 V Hot-Swap Controller
The IQFH55N04NM6ATMA1 integrates as the main pass-element in 24 V industrial hot-swap and OR-ing FET applications. Its 451 A pulsed rating supports the inrush into large bulk capacitors on the load side, and the 0.55 mΩ R_DS(on) holds the steady-state dissipation manageable even at 30 A continuous. The PQFN 8x6 clip construction provides the low thermal-resistance path needed for sustained high-current operation in industrial enclosures.
تجویز کردہ
Telecom 48 V Intermediate Bus Converter
In telecom and server intermediate-bus architectures operating from a 48 V backplane, the IQFH55N04NM6ATMA1 is used in 48 V to 12 V LLC or full-bridge converters as a primary-side switch. Its 40 V V_DS is NOT sufficient for the full 48 V rail (use a 100 V part instead), but it serves the 12 V secondary-side synchronous-rectifier role with excellent efficiency thanks to its 0.55 mΩ R_DS(on) and low Q_G.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا IQFH55N04NM6ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC045N03L5SATMA1 | IPC50N04S5L5R5ATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSON-12-1 (PQFN 8x6 mm²) | PG-TSDSON-8 (5x6 mm²) | PG-TSDSON-8 (5x6 mm²) | PG-TDSON-8 (SuperSO8, 5x6 mm²) |
| Drain-Source Voltage (V_DS) | 40 V | 30 V | 40 V | 40 V |
| Static R_DS(on) (typ @ V_GS=10V) | 0.55 mΩ | 0.45 mΩ | 5.5 mΩ | 0.76 mΩ |
| Technology Generation | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Operating Junction Temperature | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C | -55°C to +175°C |
| RoHS Status | Compliant | Compliant | Compliant | Compliant |
اہم امتیازی خصوصیات
- Lowest R_DS(on) in Infineon's 40 V OptiMOS 6 PQFN 8x6 family (بمقابلہBSC076N04NDATMA1)
- Clip-based PQFN 8x6 mm² with exposed top metal for direct PCB thermal coupling (بمقابلہISC045N03L5SATMA1)
- OptiMOS 6 cell technology offers best-in-class FOM (Q_G × R_DS(on)) (بمقابلہIPC50N04S5L5R5ATMA1)
- 451 A pulsed current rating supports motor-startup and inrush events (بمقابلہIQDH35N03LM5SCATMA1)
ڈیزائن نوٹس
Estimated: at continuous I_D = 30 A with R_DS(on) = 0.55 mΩ, conduction loss is I²R = 30² × 0.00055 = 0.495 W — easily handled by the PQFN 8x6 with a 4-layer PCB and ≥10 thermal vias under the exposed pad. At 50 A continuous, conduction loss rises to ~1.4 W; verify θ_JA on your specific board layout (typically 35-50 °C/W with proper copper stitching). For applications near the 451 A pulsed limit, ensure pulse duration stays below the thermal-time-constant of the package to avoid silicon-junction overheating.
The PG-TSON-12-1 (PQFN 8x6 mm²) clip-based package MUST be land-patterned to expose the top clip pad to the PCB. Solder the clip pad directly to the top copper pour with multiple thermal vias (≥12, 0.3 mm drill, 1 mm pitch) connecting to all internal copper layers. Place the gate driver within 5 mm of pins 4-6 to minimize gate-loop inductance — at di/dt > 5 A/ns this parasitic can cause severe ringing and unintended turn-on. Use a 10 Ω gate-source resistor to suppress Miller-induced turn-on during switching transients.
Do NOT attempt to drive this part with 3.3 V or 5 V logic. OptiMOS 6 requires V_GS = 10 V (typical) to achieve the datasheet R_DS(on) of 0.55 mΩ; at V_GS = 4.5 V the part is only partially enhanced and effective R_DS(on) can be 5-10× higher. Also avoid exceeding the absolute maximum V_GS of ±20 V — gate-oxide stress can cause parametric shift. For high-frequency switching (>500 kHz) at high current, double-check SOA: the 40 V / 451 A pulsed rating is for very short pulses only.
Keep the source-return loop area as small as possible: route the gate-driver ground return directly to the source pads (pins 1-3 / 7-9) using a Kelvin connection on the PCB — NOT through the power-ground copper pour. This Kelvin-source connection eliminates the source-inductance voltage drop from interfering with the gate-drive signal. For multi-MOSFET paralleling, gate-source resistors (10-100 Ω) on each device prevent oscillation between paralleled MOSFETs.
تعمیل کی معلومات
RoHS and REACH compliance per Infineon product page. AEC-Q100 automotive qualification not confirmed in the Verified Web Data provided — for automotive applications, verify qualification status against the latest Infineon automotive product catalog.
