ISC017N04NM5ATMA1 - 40V 1.7mΩ N-Ch MOSFET | Infineon
MPN: ISC017N04NM5ATMA1 ✓ فعالISC017N04NM5ATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch used to route or modulate current in power-conversion and load-driving circuits. N-channel MOSFETs such as the ISC017N04NM5 belong to the discrete semiconductor family, sitting alongside IGBTs, thyristors and bipolar transistors in the broader power-electronics hierarchy. Within Infineon's OptiMOS 5 40V platform, this part is optimized for synchronous rectification, low-voltage motor drive and high-current DC-DC conversion where conduction loss dominates thermal budget.
Headline specifications from the manufacturer datasheet include a continuous drain current of 31A at TA=25°C rising to 193A at TC=25°C, a pulsed avalanche rating supporting high inrush conditions, gate charge of 67 nC at 10V VGS, and a power dissipation envelope of 3W (TA) and 115W (TC). The 1.7 mΩ RDS(on) at 10V VGS is one of the lowest in the 40V TDSON-8 FL class, enabling reduced conduction loss and higher efficiency in high-current loops. The part is rated for an operating junction temperature of -55°C to +175°C, supporting automotive under-hood and industrial heavy-duty environments.
Typical applications targeted by the Infineon design team include 12V-24V brushless DC (BLDC) motor drives, e-bike and power-tool inverters, battery management system (BMS) protection FETs, USB Power Delivery (PD) and high-current hot-swap circuits, synchronous rectification in isolated and non-isolated DC-DC converters, and automotive LED lighting modules. The exposed-die TDSON-8 FL package minimizes package resistance contribution and provides a low thermal resistance path to the PCB copper.
For designers, the dominant design consideration is gate-drive voltage: RDS(on) is specified at VGS=10V, but the part also supports 4.5V logic-level drive, with RDS(on) rising roughly 2x at the lower gate voltage. A low-impedance gate driver and adequate VGS decoupling are recommended for high-frequency switching. Compared with planar predecessors, OptiMOS 5 cuts output charge and reverse-recovery charge, simplifying snubber design in half-bridge topologies.
کے لیے ڈراپ اِن متبادل ISC017N04NM5ATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISC017N04NM5ATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, MSL Level, Operating Temperature Range, Technology, Product Family.
ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N04LSTATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC015N06NM5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC100N04S5L1R5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC151N08NM6ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISC017N04NM5ATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) at TA=25C | 31 A |
| Continuous Drain Current (ID) at TC=25C | 193 A |
| On-Resistance RDS(on) at VGS=10V, ID=50A | 1.7 mOhm |
| Gate Threshold Voltage VGS(th) typ. | 3.4 V |
| Gate Charge Qg at VGS=10V | 67 nC |
| Input Capacitance Ciss at VDS=20V | 4800 pF |
| Power Dissipation at TA=25C | 3 W |
| Power Dissipation at TC=25C | 115 W |
| آپریٹنگ جنکشن درجہ حرارت | -55C to +175C |
| پیکیج | PG-TDSON-8 FL (5x6 mm) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| MSL لیول | 1 (per JEDEC J-STD-020) |
ISC017N04NM5ATMA1 پن کنفیگریشن
| پن 1 | G — Gate |
| پن 2 | D — Drain (connected to exposed pad) |
| پن 3 | D — Drain (connected to exposed pad) |
| پن 4 | D — Drain (connected to exposed pad) |
| پن 5 | D — Drain (connected to exposed pad) |
| پن 6 | D — Drain (connected to exposed pad) |
| پن 7 | D — Drain (connected to exposed pad) |
| پن 8 | D — Drain (connected to exposed pad) |
محفوظ آپریٹنگ ایریا (DC)
عام استعمالات
ISC017N04NM5ATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: BLDC Motor Drive (e-Mobility), Synchronous Rectification in DC-DC Converters, Battery Management System (BMS) Protection FET, USB Power Delivery (PD) Hot-Swap / Load Switch, Automotive LED Lighting Modules, Industrial 24V Solenoid / Relay Driver.
BLDC Motor Drive (e-Mobility)
The ISC017N04NM5ATMA1 fits 12V-48V BLDC motor drives in e-bikes, power tools, and drone ESCs. Its 1.7 mOhm RDS(on) at VGS=10V minimizes conduction loss during the high-side/low-side synchronous PWM switching that BLDC topologies require. The 193A continuous drain current at TC=25C provides 6x headroom over typical 30A motor-phase currents, while 67 nC gate charge keeps driver losses modest at 20-50 kHz PWM. Placed in the half-bridge switching node with a dedicated 10V gate-driver IC and 10-100nF ceramic bypass on the drain, it outperforms planar predecessors in the same TDSON-8 footprint.
تجویز کردہ
Synchronous Rectification in DC-DC Converters
The ISC017N04NM5ATMA1 serves as the low-side synchronous rectifier in 12V/24V buck and buck-boost converters for telecom, server, and industrial power. Its 1.7 mOhm RDS(on) and 67 nC gate charge keep body-diode conduction losses low and reverse-recovery charge minimal, which is critical at 300-500 kHz switching frequencies used by point-of-load regulators. Compared with the previous OptiMOS 3 generation, the OptiMOS 5 die shrinks output capacitance and gate-charge, allowing designers to either raise switching frequency (smaller inductor) or improve efficiency (lower thermals) on the same PCB.
تجویز کردہ
Battery Management System (BMS) Protection FET
The ISC017N04NM5ATMA1 is well-suited as the high-side or low-side protection MOSFET in 12V-24V lithium-ion battery packs. Its 1.7 mOhm RDS(on) limits steady-state voltage drop and self-heating during normal charge/discharge, while the 40V VDS rating provides 50%+ margin over 24V bus transients. In e-bike and portable-power-station designs, two ISC017N04NM5 parts in back-to-back configuration form the standard bidirectional disconnect path; the 31A continuous TA rating supports 15A continuous discharge with substantial transient margin for motor inrush.
تجویز کردہ
USB Power Delivery (PD) Hot-Swap / Load Switch
The ISC017N04NM5ATMA1 acts as the hot-swap protection FET on USB PD 3.1 EPR 28V/36V/48V ports, where 40V VDS provides just enough headroom while the 1.7 mOhm RDS(on) minimizes IR-drop across the cable and connector. Gate-charge of 67 nC is compatible with 1 MHz capable hot-swap controllers, and the exposed-pad TDSON-8 FL package dissipates fault-clearing energy directly into PCB copper. Pair it with a dedicated hot-swap controller for inrush-current limiting and OVP/OCP protection per USB PD specification.
تجویز کردہ
Automotive LED Lighting Modules
The ISC017N04NM5ATMA1 fits automotive front-light LED driver and daytime-running-light (DRL) topologies where 12V/24V buses switch high-current LED strings via PWM dimming. Its -55C to +175C junction temperature range covers under-hood and headlamp thermal environments, while 1.7 mOhm RDS(on) keeps conduction loss low in continuous conduction mode. Note that AEC-Q100 qualification requires ordering the -Q1 automotive suffix variant; the standard ISC017N04NM5ATMA1 is industrial-grade and not AEC-Q100 qualified.
تجویز کردہ
Industrial 24V Solenoid / Relay Driver
The ISC017N04NM5ATMA1 drives 24V industrial solenoids, valves, and relays in factory automation where low on-resistance keeps coil drive voltage high (less voltage drop across the FET). Its 31A continuous TA rating supports multi-coil paralleling, and the 40V VDS withstands 24V bus inductive kickback when paired with a flyback diode. The exposed-pad TDSON-8 FL footprint simplifies thermal management on dense PLC and I/O module PCBs, while the wide -55C to +175C operating range covers industrial cabinet environments.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISC017N04NM5ATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC011N04NM7VATMA1 | BSC019N04LSTATMA1 | ISC015N06NM5ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 FL (5x6 mm) | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same | PG-TDSON-8 FL (5x6 mm) - same |
| Drain-Source Voltage VDS | 40 V | 40 V | 40 V | 60 V | 40 V |
| RDS(on) at VGS=10V | 1.7 mOhm | 1.1 mOhm (lower loss) | 1.9 mOhm | 1.5 mOhm | 1.5 mOhm |
| Technology Generation | OptiMOS 5 | OptiMOS 7 (newer) | OptiMOS 5 (same gen) | OptiMOS 5 (same gen) | OptiMOS 5 (same gen) |
| Approx. Unit Price (qty-1) | $1.85 | $2.40 (est., newer gen) | $1.70 (est.) | $2.10 (est.) | $1.90 (est.) |
اہم امتیازی خصوصیات
- Lower RDS(on) than OptiMOS 5 sibling BSC019N04LSTATMA1 (بمقابلہBSC019N04LSTATMA1)
- More cost-effective than newer OptiMOS 7 generation (بمقابلہISC011N04NM7VATMA1)
- Lower Rds(on) per unit area than 60V ISC015N06NM5ATMA1 in same footprint (بمقابلہISC015N06NM5ATMA1)
ڈیزائن نوٹس
Estimated: at ID=30A continuous and RDS(on)=1.7 mOhm, conduction loss P=I^2*R = 1.53W; with the exposed pad soldered to a 1 sq inch copper pour (theta_JA ~ 35 C/W), junction temperature rise is roughly 53C above ambient. For higher continuous currents or operation in enclosed enclosures, reduce theta_JA further by enlarging copper area or adding thermal vias to internal copper planes. Always validate junction temperature with the datasheet thermal impedance curve under worst-case ambient.
Place gate-drive components within 5 mm of the gate pin to minimize gate-loop inductance; long gate traces cause ringing that can exceed VGS(max) and damage the device. Use a 10 Ohm gate-source resistor close to the gate pin to dampen parasitic oscillations. The source (pin 2 area) should use multiple vias to a continuous ground copper pour for lowest source inductance, which is the dominant determinant of switching loss in the high-side position.
Do not assume RDS(on) at VGS=4.5V equals the headline 1.7 mOhm value - it is roughly 2-3x higher, dramatically increasing conduction loss in 5V logic-level drive designs. Always check the datasheet Rds(on) vs VGS curve and ensure your gate driver delivers >=10V VGS for full-rated performance. Also avoid exceeding the maximum VGS rating of +/-20V by adding gate-source ESD protection in hot-swap circuits where transients are common.
The PG-TDSON-8 FL exposed pad must be soldered to a copper land pattern with thermal vias for the rated 115W TC power dissipation. Minimum recommended land pattern is per Infineon application note AN-2012-2; use at least 9 thermal vias (0.3 mm drill, 0.6 mm pad, 1.0 mm pitch) connecting the top copper to inner ground/power planes. Insufficient thermal vias are the most common cause of field failures when migrating from a smaller MOSFET package to TDSON-8 FL.
تعمیل کی معلومات
RoHS and REACH compliant per PartGenie and Infineon product page. The standard ISC017N04NM5ATMA1 is industrial-grade (not AEC-Q100 qualified); AEC-Q100 -Q1 suffix variants are available for automotive programs.
