ISCH99N04NM7VATMA1 - 40V OptiMOS 7 N-Channel MOSFET | Infineon
MPN: ISCH99N04NM7VATMA1 ✓ فعالISCH99N04NM7VATMA1 جائزہ
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate conduction between source and drain terminals. The OptiMOS 7 family represents Infineon's 7th-generation trench MOSFET technology for 12 V to 48 V power systems, where it sits within the broader taxonomy of discrete semiconductors > MOSFETs > N-channel power MOSFETs > power management switches. Compared to older planar generations, OptiMOS 7 reduces R_DS(on) per area and tightens switching loss/figure-of-merit for high-frequency converters.
Key features include an industry-leading R_DS(on) optimized for 40 V systems, up to 3x wider Safe Operating Area versus OptiMOS 6, and a controlled transconductance (g_fs) that is 70% lower than prior generations. A higher gate threshold voltage (V_th up to 3.2 V) provides enhanced induced turn-on ruggedness and inherent short-circuit current limitation, while the price-performance-optimized silicon enables cost-effective designs for harsh-environment applications.
Typical applications include 12 V to 48 V brushless DC (BLDC) motor drives in e-mobility, battery-powered power tools, e-bike controllers, cordless vacuum cleaners, low-voltage drives in robotics, and telecom 48 V point-of-load converters. The wide SOA and high pulse-current handling also make it suitable for automotive ECU loads and industrial automation modules operating near rated current limits.
When designing with the ISCH99N04NM7VATMA1, place the source pad (PG-TDSON-8 FL exposed pad) over a sufficiently large copper pour to keep the junction below the maximum 175 C rating under worst-case SOA conditions. Because of the high V_th (up to 3.2 V), the device tolerates induced turn-on from fast dV/dt edges better than lower-Vth predecessors, simplifying gate-drive design. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer product page alone.
کے لیے ڈراپ اِن متبادل ISCH99N04NM7VATMA1 — یکساں پیکیج، پن سے پن مطابقت پذیر۔ مختلف پیکیج والے پرزے جن کے لیے PCB دوبارہ کام درکار ہو، شامل نہیں ہیں۔
اس سیریز میں مختلف ورژن
اسی سیریز کے ماڈلز جو ڈراپ اِن مطابقت رکھتے ہیں ISCH99N04NM7VATMA1 (یکساں فارم فیکٹر اور فٹ پرنٹ) — میں مختلف Package, Operating Temperature Range, Technology, MSL Level, RoHS Status.
ISC011N04NM7VATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH50NE2LM7ZCGATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IPC100N04S5L1R5ATMA1
✅ ڈراپ-اِنقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →IQEH54NE2LM7UCGATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →BSC019N04LSTATMA1
✅ ڈراپ-اِن ⚠️ تفصیلات غیر تصدیق شدہقیمت کے لیے رابطہ کریں
ڈیٹا شیٹ دیکھیں →ISCH99N04NM7VATMA1 زیادہ سے زیادہ ریٹنگز اور برقی خصوصیات
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 7 |
| FET Type | N-Channel |
| Drain-Source Voltage (V_DS) | 40 V |
| Continuous Drain Current at Ta (I_D) | 40 A |
| Pulsed Drain Current at Tc (I_DM) | 284 A |
| Power Dissipation at Ta (P_D) | 3 W |
| Power Dissipation at Tc (P_D) | 150 W |
| Gate Threshold Voltage (V_th) | Up to 3.2 V |
| پیکیج | PG-TDSON-8 (TDSON-8 FL) |
| ماؤنٹنگ ٹائپ | Surface Mount |
| RoHS اسٹیٹس | Compliant |
| Technology | OptiMOS 7 Trench Power MOSFET |
| Operating Mode | Enhancement-mode |
| Target Application | 12 V to 48 V Motor Drives |
ISCH99N04NM7VATMA1 پن کنفیگریشن
| پن 1 | Gate — Gate drive input |
| پن 2 | Source — Source connection |
| پن 3 | Source — Source connection |
| پن 4 | Source (Exposed Pad) — Source and primary thermal path |
| پن 5 | Drain — Drain connection |
| پن 6 | Drain — Drain connection |
| پن 7 | Drain — Drain connection |
| پن 8 | Drain — Drain connection |
محفوظ آپریٹنگ ایریا - DC (V_DS vs I_D)
عام استعمالات
ISCH99N04NM7VATMA1 کے لیے موزوں ہے 6 ایپلیکیشنs: 24V Brushless DC (BLDC) Motor Drive, Cordless Power Tool Motor Control, Telecom 48V Point-of-Load Converter, E-Bike and E-Scooter Motor Controller, Robotics and Low-Voltage Industrial Drives, Battery Management System (BMS) Protection Switch.
24V Brushless DC (BLDC) Motor Drive
The ISCH99N04NM7VATMA1's 40 V drain-source breakdown and 284 A pulsed drain current make it ideal for 24 V BLDC motor half-bridge switches in e-bike controllers, cordless vacuum cleaners, and small industrial pumps. Its 3x wider SOA versus OptiMOS 6 absorbs motor stall transients without tripping protection, while the V_th up to 3.2 V rejects induced turn-on from fast dV/dt switching edges generated by the complementary MOSFET in the half-bridge. Place the PG-TDSON-8 FL exposed pad over a 50 mm² copper pour and gate-drive with a 10 Ω gate resistor to balance switching loss and ringing. The trade-off versus a dedicated motor-drive gate driver IC (e.g., 6EDL7141) is discrete BOM cost vs integrated protection.
تجویز کردہ
Cordless Power Tool Motor Control
The 40 V V_DS rating and 150 W power dissipation at Tc suit 18 V to 36 V cordless drill, impact-driver, and saw motor-control boards where the battery pack voltage can overshoot under regenerative braking. The ISCH99N04NM7VATMA1's 70% lower transconductance (g_fs) improves current sharing between parallel MOSFETs - critical when two or three devices are paralleled to handle 100 A+ motor currents. The enhanced ruggedness also handles the motor's back-EMF during sudden reversals. Trade-off: the higher V_th (3.2 V max) requires a gate-driver supply of at least 6 V to fully enhance, which is above typical 5 V logic levels - use a dedicated bootstrap gate driver.
تجویز کردہ
Telecom 48V Point-of-Load Converter
In 48 V telecom point-of-load (PoL) converters stepping down to 12 V or 5 V rails, the ISCH99N04NM7VATMA1 serves as the high-side or low-side switch in a buck topology. Its 40 V V_DS provides 14% headroom above the 41 V telecom transient envelope, while the controlled transconductance minimizes voltage overshoot and reduces ringing on the SW node - critical for EMI compliance with CISPR 22 Class B. The exposed PG-TDSON-8 FL pad simplifies thermal management when bolted to a heatsink or bonded to a large inner copper layer. Trade-off: OptiMOS 7 is optimized for 40 V, so above 48 V input you would need a 60 V or 80 V alternative.
تجویز کردہ
E-Bike and E-Scooter Motor Controller
E-bike and e-scooter traction controllers run on 24 V to 48 V battery packs and demand MOSFETs that survive repetitive peak currents during hill-climbing. The ISCH99N04NM7VATMA1's 284 A pulsed rating and 150 W power dissipation at Tc absorb those peaks, while the wide SOA tolerates back-EMF events during regenerative braking. The 3.2 V maximum V_th improves noise immunity against inverter-induced common-mode transients. Trade-off: the device is not AEC-Q qualified, so it is appropriate for personal e-mobility but not automotive OEM traction inverters - for those, source the AEC-Q100 automotive-grade equivalent from Infineon.
تجویز کردہ
Robotics and Low-Voltage Industrial Drives
Industrial robotic joints, AGV (automated guided vehicle) wheel motors, and small servo drives use 24 V to 48 V DC bus rails switched at high PWM frequency to drive precision actuators. The ISCH99N04NM7VATMA1's low transconductance and tight V_th distribution ensure predictable current sharing across paralleled devices, which is essential for the multi-MOSFET half-bridges in 50 A to 200 A robotics drive stages. The wider SOA also supports the rare but stressful short-circuit event during a stalled joint. Trade-off: at switching frequencies above 100 kHz, switching losses dominate - verify gate-charge figures in the datasheet for your topology.
تجویز کردہ
Battery Management System (BMS) Protection Switch
In lithium-ion battery packs (24 V to 48 V nominal), the ISCH99N04NM7VATMA1 can serve as the high-side protection switch that disconnects the load during over-current, short-circuit, or overtemperature events. Its 284 A pulsed rating handles the inrush of motor-start capacitors, and the enhanced short-circuit ruggedness - enabled by V_th up to 3.2 V and inherent current limiting - prevents catastrophic failure during a pack short. The PG-TDSON-8 FL package fits within the compact BMS PCB footprint. Trade-off: a dedicated load-switch IC (e.g., BTS3028SDR) provides integrated protection logic, while the discrete MOSFET approach gives flexibility on trip thresholds.
تجویز کردہ
تجویز کردہ پروڈکٹس کا خلاصہ
کے لیے انجینئرنگ ریفرنس ڈیٹا ISCH99N04NM7VATMA1 — موازنہ، ڈیزائن رہنمائی، اور تعمیل کی معلومات۔
انتخاب کی گائیڈ
متبادلات کے ساتھ موازنہ
| پیرامیٹر | یہ پروڈکٹ | ISC011N04NM7VATMA1 | IQEH50NE2LM7ZCGATMA1 | IPC100N04S5L1R5ATMA1 | IQEH54NE2LM7UCGATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| V_DS Max | 40 V | 40 V | 40 V | 40 V | 40 V | 40 V |
| Technology Generation | OptiMOS 7 | OptiMOS 7 | OptiMOS family | OptiMOS 5 | OptiMOS family | OptiMOS 5/6 |
| SOA Improvement vs Prior Gen | 3x vs OptiMOS 6 | Same OptiMOS 7 family | OptiMOS family | OptiMOS 5 - narrower SOA | OptiMOS family | OptiMOS 5/6 |
اہم امتیازی خصوصیات
- 3x wider Safe Operating Area versus OptiMOS 6 (بمقابلہPrior OptiMOS 6 40 V family members)
- Higher gate threshold voltage up to 3.2 V (بمقابلہOptiMOS 5 / 6 generations)
- 70% lower transconductance than OptiMOS 6 (بمقابلہOptiMOS 6 40 V family)
- Highest pulsed drain current in 40 V PG-TDSON-8 class (بمقابلہISC011N04NM7VATMA1 and similar Infineon 40 V family members)
ڈیزائن نوٹس
The PG-TDSON-8 FL exposed pad is electrically Source AND the primary thermal path. Recommended layout: 50 mm² copper pour on the top layer plus a thermal via array (9 to 16 vias, 0.3 mm diameter) to an inner copper plane. Without this, the R_thJA rises and the 150 W Tc rating cannot be achieved. Estimate: at 3 W dissipation in still air (Ta=25 C) the junction rises roughly 75 C above ambient; with a 50 mm² 2 oz copper pour it rises about 50 C.
Place the gate-drive resistor (typically 10 Ω) as close as possible to the gate pin to minimize parasitic loop inductance and dampen the LC resonance with C_iss. Add a 10 kΩ pull-down resistor from gate to source to keep the MOSFET off during controller power-up, preventing accidental turn-on from transient leakage on the gate pin. Use Kelvin source connection if the layout permits - this eliminates the source-stray voltage drop from corrupting the gate-drive signal.
Do not exceed V_GS_max of ±20 V (typical for OptiMOS family). Many gate drivers source 12 V or 15 V which is within limits, but verify during fault conditions when the gate-driver supply can overshoot. Also, do not rely on the body diode for sustained freewheeling in synchronous-rectifier topologies - check the reverse-recovery behavior in the datasheet or use an external SiC Schottky in parallel. Finally, avoid shorting drain to source below the rated avalanche energy, even within absolute maximum ratings - the ISCH99N04NM7V is avalanche-rated, but repeated avalanche events degrade R_DS(on) over time.
Keep the high-dV/dt switching loop (drain-Source power loop) physically small to minimize parasitic inductance, which would otherwise cause voltage overshoot beyond 40 V and trigger avalanche breakdown. Recommended: source-sense (Kelvin) connection from the gate-driver ground to the source pad, and a tightly-coupled input bypass capacitor. Estimate: each nanohenry of stray inductance contributes roughly 10 V of overshoot per 100 A/ns switching edge.
تعمیل کی معلومات
RoHS compliant per Infineon product page. Not AEC-Q100 qualified in the standard part number suffix; automotive-grade variants are available separately from Infineon. Halogen-free per Infineon datasheet packaging information.
